Angular-Dependent THz Modulator with Hybrid Metal-Graphene Metastructures.

The coupling effects of surface plasmon resonance (SPR) from metamaterials induce variation in both the frequency and intensity of plasmonic modes. Here, we report an angular-dependent THz modulator with hybrid metal-graphene metastructures. The metastructures composed of the period gold split-rod arrays on top of a monolayer graphene, which show redshift modulation in the THz region with an increasing incident angle due to the strong out-of-plane magnetic flux introduced by the clockwise circular current at the oblique incidence. By utilizing graphene-based actively tunable conductor with ion-gel electrical gating, the THz transmission can be significantly modified. The modulation depth of the hybrid metal-graphene metastructure modulator can reach ~37.6% at 0.62 THz with a gate voltage of -3 V. The theoretical modeling of transmitted dependency on frequency and incident angle is demonstrated at different Fermi energies, which fits well with the experimental results. This hybrid device can offer a useful method for THz applications (such as angle sensors or angular-resolved spectroscopy), where angle-dependent modulation is needed.

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region.

Benefiting from a high quantum efficiency, low thermal emittance, and large absorption coefficient, InxGa1-xAs is an excellent group III-V compound for negative electron affinity (NEA) photocathodes. As the emission layer, InxGa1-xAs, where x = 0.15, has the optimal performance for detection in the near-infrared (NIR) region. Herein, an NEA In0.15Ga0.85As photocathode with Al0.63Ga0.37As as the buffer layer is designed in the form of a transmission mode module. The electronic band structures and optical properties of In0.15Ga0.85As and Al0.63Ga0.37As are calculated based on density functional theory. The time response characteristics of the In0.15Ga0.85As photocathode have been fully investigated by changing the photoelectron diffusion coefficient, the interface recombination velocity, and the thickness of the emission layer. Our results demonstrate that the response time of the In0.15Ga0.85As photocathode can be reduced to 6.1 ps with an incident wavelength of 1064 nm. The quantum efficiency of the In0.15Ga0.85As photocathode is simulated by taking into account multilayer optical thin film theory. The results indicate that a high quantum efficiency can be obtained by parameter optimization of the emission layer. This paper provides significant theoretical support for the applications of semiconductor photocathodes in the near-infrared region, especially for the study of ultrafast responses in the photoemission process.

Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe2O3.

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3.

Chip-Level Integration of Covalent Organic Frameworks for Trace Benzene Sensing.

State-of-the-art chemical sensors based on covalent organic frameworks (COFs) are restricted to the transduction mechanism relying on luminescence quenching and/or enhancement. Herein, we present an alternative methodology via a combination of in situ-grown COF films with interdigitated electrodes utilized for capacitive benzene detection. The resultant COF-based sensors exhibit highly sensitive and selective detection at room temperature toward benzene vapor over carbon dioxide, methane, and propane. Their benzene detection limit can reach 340 ppb, slightly inferior to those of the metal oxide semiconductor-based sensors, but with reduced power consumption and increased selectivity. Such a sensing behavior can be attributed to the large dielectric constant of the benzene molecule, distinctive adsorptivity of the chosen COF toward benzene, and structural distortion induced by the custom-made interaction pair, which is corroborated by sorption measurements and density functional theory (DFT) calculations. This study provides new perspectives for fabricating COF-based sensors with specific functionality targeted for selective gas detection.

High-Throughput Computational Screening of Vertical 2D van der Waals Heterostructures for High-efficiency Excitonic Solar Cells.

As an effort to identify van der Waals heterostructures for efficient excitonic solar cell application, high-throughput computational screening was carried out to study the band alignments of 1540 vertical heterostructures formed by 56 two-dimensional semiconducting/insulating materials. More than 90 heterostructures with estimated power conversion efficiency (PCE) higher than 15% have been identified, of which 17 heterostructures are predicted to have PCE higher than the best value (20%) reported or proposed in the literature.