Large valley polarization and the valley-dependent Hall effect in a Janus TiTeBr monolayer.

Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie temperature (TC). Using first-principles calculations, we predict that the TiTeBr monolayer is a promising ferrovalley candidate. It exhibits intrinsic ferromagnetism with TC as high as 220 K. It is indicated that an out-of-plane alignment of magnetization demonstrates a valley polarization up to 113 meV in the topmost valence band, as further verified by perturbation theory considering both the spin polarization and spin-orbit coupling. Under an in-plane electric field, the valley-dependent Berry curvature results in the anomalous valley Hall effect (AVHE). Moreover, under a suitable in-plane biaxial strain, the TiTeBr monolayer transforms into a Chern insulator with a nonzero Chern number, yet retains its ferrovalley characters and thus the emergent quantum anomalous valley Hall effect (QAVHE). Our study indicates that the TiTeBr monolayer is a promising ferrovalley material, and it provides a platform for investigating the valley-dependent Hall effect.

Performance Enhancement of Tin-Based Perovskite Photodetectors through Bifunctional Cesium Fluoride Engineering.

Tin halide perovskites are rising as promising candidates for next-generation optoelectronic materials due to their good optoelectronic properties and relatively low toxicity. However, the high defect density and the easy oxidation of Sn2+ have limited their optoelectronic performance. Herein, we report the treatment of the FASnI3 (formamidinium tin, FA) perovskite film by a bifunctional cesium fluoride (CsF) additive, which improves the film quality and significantly enhances the photoelectric performance. The responsivity of the perovskite-based photodetector (PD) with an optimal CsF concentration of 15% is over 60 times larger than that of the PD without CsF. It indicates that both the Cs substitution and the fluoride anion additive from CsF inhibit the oxidation of Sn2+, optimize the crystal growth, and passivate the defects, demonstrating the dual roles of the CsF additive in improving the photoelectric performance. This work offers valuable insights into the additive selection for developing high-quality tin-based perovskite films and devices.

Structure and stability of La- and hole-doped hafnia with/without epitaxial strain.

The significance of hafnia in the semiconductor industry has been amplified following the unearthing of its ferroelectric properties. We investigated the structure and electrical properties of La- and hole-doped HfO2with/without epitaxial strain by first-principles calculations. It is found that the charge compensated defect with oxygen vacancy (LaHfVO) and uncompensated defect (LaHf), compared to the undoped case, make the ferroelectric orthorhombicPca21phase (ophase) more stable. Conversely, the electrons compensated defect (LaHf+e) makes the nonpolar monoclinicP21/cphase (mphase) more stable. Furthermore, both pure hole doping (without ions substituent) and compressive strain can stabilize theophase. Our work offers a new perspective on enhancing the ferroelectricity of hafnia.

Ionic Liquid Bridge Assisting Bifacial Defect Passivation for Efficient All-Inorganic Perovskite Cells with High Open-Circuit Voltage.

Serious open-circuit voltage (Voc) loss originating from nonradiative recombination and mismatch energy level at TiO2/perovskite buried interface dramatically limits the photovoltaic performance of all-inorganic CsPbIxBr3-x (x = 1, 2) perovskite solar cells (PSCs) fabricated through low-temperature methods. Here, an ionic liquid (IL) bridge is constructed by introducing 1-butyl-3-methylimidazolium acetate (BMIMAc) IL to treat the TiO2/perovskite buried interface, bilaterally passivate defects and modulate energy alignment. Therefore, the Voc of all-inorganic CsPbIBr2 PSCs modified by BMIMAc (Target-1) significantly increases by 148 mV (from 1.213 to 1.361 V), resulting in the efficiency increasing to 10.30% from 7.87%. Unsealed Target-1 PSCs show outstanding long-term and thermal stability. During the accelerated degradation process (85 °C, RH: 50∼60%), the Target-1 PSCs achieve a champion PCE of 11.94% with a remarkable Voc of 1.403 V, while the control PSC yields a promising PCE of 10.18% with a Voc of 1.319 V. In particular, the Voc of 1.403 V is the highest Voc reported so far in carbon-electrode-based CsPbIBr2 PSCs. Moreover, this strategy enables the modified all-inorganic CsPbI2Br PSCs to achieve a Voc of 1.295 V and a champion efficiency of 15.20%, which is close to the reported highest PCE of 15.48% for all-inorganic CsPbI2Br PSCs prepared by a low-temperature process. This study provides a simple BMIMAc IL bridge to assist bifacial defect passivation and elevate the photovoltaic performance of all-inorganic CsPbIxBr3-x (x = 1, 2) PSCs.

Tunable and parabolic piezoelectricity in hafnia under epitaxial strain.

Piezoelectrics are a class of functional materials that have been extensively used for application in modern electro-mechanical and mechatronics technologies. The sign of longitudinal piezoelectric coefficients is typically positive but recently a few ferroelectrics, such as ferroelectric polymer poly(vinylidene fluoride) and van der Waals ferroelectric CuInP2S6, were experimentally found to have negative piezoelectricity. Here, using first-principles calculation and measurements, we show that the sign of the longitudinal linear piezoelectric coefficient of HfO2 can be tuned from positive to negative via epitaxial strain. Nonlinear and even parabolic piezoelectric behaviors are further found at tensile epitaxial strain. This parabolic piezoelectric behavior implies that the polarization decreases when increasing the magnitude of either compressive or tensile longitudinal strain, or, equivalently, that the strain increases when increasing the magnitude of electric field being either parallel or antiparallel to the direction of polarization. The unusual piezoelectric effects are from the chemical coordination of the active oxygen atoms. These striking piezoelectric features of positive and negative sign, as well as linear and parabolical behaviors, expand the current knowledge in piezoelectricity and broaden the potential of piezoelectric applications towards electro-mechanical and communications technology.

Pressure-Induced Topological Phase Transition and Large Rashba Effect in Halide Double Perovskite.

In general, hydrostatic pressure can suppress ferroelectric polarization and further reduce Rashba spin-splitting, considering the spin-orbit coupling effect. Here, we present the design of ferroelectric double perovskite Cs2SnSiI6, which exhibits the anomalous enhancement of Rashba spin-splitting parameters by pressure-induced ferroelectric topological order. The Rashba effect is nonlinear with the decrease in polarization under pressure and reaches a maximum at the pressure-induced Weyl semimetal (WSM) state between the transition from a normal insulator (NI) to a topological insulator (TI). Furthermore, we discover that controlling ferroelectric polarization with an electric field can also induce the topological transition with a large Rashba spin-splitting but under a lower critical pressure. These discoveries show a tunable gaint Rashba effect and pressure-induced topological phase transition for Cs2SnSiI6, which can promote future research on the interaction between the Rashba effect and topological order, and its application to new electronic and spintronic devices.

Supramolecular Polyurethane "Ligaments" Enabling Room-Temperature Self-Healing Flexible Perovskite Solar Cells and Mini-Modules.

Flexible perovskite solar cells (F-PSCs) have emerged as promising alternatives to conventional silicon solar cells for applications in portable and wearable electronics. However, the mechanical stability of inherently brittle perovskite, due to residual lattice stress and ductile fracture formation, poses significant challenges to the long-term photovoltaic performance and device lifetime. In this paper, to address this issue, a dynamic "ligament" composed of supramolecular poly(dimethylsiloxane) polyurethane (DSSP-PPU) is introduced into the grain boundaries of the PSCs, facilitating the release of residual stress and softening of the grain boundaries. Remarkably, this dynamic "ligament" exhibits excellent self-healing properties and enables the healing of cracks in perovskite films at room temperature. The obtained PSCs have achieved power conversion efficiencies of 23.73% and 22.24% for rigid substrates and flexible substrates, respectively, also 17.32% for flexible mini-modules. Notably, the F-PSCs retain nearly 80% of their initial efficiency even after subjecting the F-PSCs to 8000 bending cycles (r = 2 mm), which can further recover to almost 90% of the initial efficiency through the self-healing process. This remarkable improvement in device stability and longevity holds great promise for extending the overall lifetime of F-PSCs.

A Self-Assembled 3D/0D Quasi-Core-Shell Structure as Internal Encapsulation Layer for Stable and Efficient FAPbI3 Perovskite Solar Cells and Modules.

FAPbI3 perovskites have garnered considerable interest owing to their outstanding thermal stability, along with near-theoretical bandgap and efficiency. However, their inherent phase instability presents a substantial challenge to the long-term stability of devices. Herein, this issue through a dual-strategy of self-assembly 3D/0D quasi-core-shell structure is tackled as an internal encapsulation layer, and in situ introduction of excess PbI2 for surface and grain boundary defects passivating, therefore preventing moisture intrusion into FAPbI3 perovskite films. By utilizing this method alone, not only enhances the stability of the FAPbI3 film but also effectively passivates defects and minimizes non-radiative recombination, ultimately yielding a champion device efficiency of 23.23%. Furthermore, the devices own better moisture resistance, exhibiting a T80 lifetime exceeding 3500 h at 40% relative humidity (RH). Meanwhile, a 19.51% PCE of mini-module (5 × 5 cm2) is demonstrated. This research offers valuable insights and directions for the advancement of stable and highly efficient FAPbI3 perovskite solar cells.

Strain-Induced Reversible Motion of Skyrmions at Room Temperature.

Magnetic skyrmions are topologically protected swirling spin textures with great potential for future spintronic applications. The ability to induce skyrmion motion using mechanical strain not only stimulates the exploration of exotic physics but also affords the opportunity to develop energy-efficient spintronic devices. However, the experimental realization of strain-driven skyrmion motion remains a formidable challenge. Herein, we demonstrate that the inhomogeneous uniaxial compressive strain can induce the movement of isolated skyrmions from regions of high strain to regions of low strain at room temperature, which was directly observed using an in situ Lorentz transmission electron microscope with a specially designed nanoindentation holder. We discover that the uniaxial compressive strain can transform skyrmions into a single domain with in-plane magnetization, resulting in the coexistence of skyrmions with a single domain along the direction of the strain gradient. Through comprehensive micromagnetic simulations, we reveal that the repulsive interactions between skyrmions and the single domain serve as the driving force behind the skyrmion motion. The precise control of skyrmion motion through strain provides exciting opportunities for designing advanced spintronic devices that leverage the intricate interplay between strain and magnetism.

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

Colossal Linear Magnetoelectricity in Polar Magnet Fe_{2}Mo_{3}O_{8}.

The linear magnetoelectric effect is an attractive phenomenon in condensed matters and provides indispensable technological functionalities. Here a colossal linear magnetoelectric effect with diagonal component α_{33} reaching up to ∼480 ps/m is reported in a polar magnet Fe_{2}Mo_{3}O_{8}. This effect can persist in a broad range of magnetic field (∼20 T) and is orders of magnitude larger than reported values in literature. Such an exceptional experimental observation can be well reproduced by a theoretical model affirmatively unveiling the vital contributions from the exchange striction, while the sign difference of magnetocrystalline anisotropy can also be reasonably figured out.

Mutually Tuned Dual Additive Engineering Synergistically Enhances the Photovoltaic Performance of Tin-Based Perovskite Solar Cells.

Tin-based perovskite solar cells (T-PSCs) have become the star photovoltaic products in recent years due to their low environmental toxicity and superior photovoltaic performance. However, the easy oxidation of Sn2+ and the energy level mismatch between the perovskite film and charge transport layer limit its efficiency. In order to regulate the microstructure and photoelectric properties of tin-based perovskite films to enhance the efficiency and stability of T-PSCs, guanidinium bromide (GABr) and organic Lewis-based additive methylamine cyanate (MAOCN) are introduced into the FA0.9PEA0.1SnI3-based perovskite precursor. A series of characterizations show that the interactions between additive molecules and perovskite mutually reconcile to improve the photovoltaic performance of T-PSCs. The introduction of GABr can adjust the band gap of the perovskite film and energy level alignment of T-PSCs. They significantly increase the open-circuit voltage (Voc). The MAOCN material can form hydrogen bonds with SnI2 in the precursor, which can inhibit the oxidation of Sn2+ and significantly improve the short-circuit current density (Jsc). The synergistic modulation of the dual additives reduces the trap-state density and improves photovoltaic performance, resulting in an increased champion efficiency of 9.34 for 5.22% of the control PSCs. The unencapsulated T-PSCs with GABr and MAOCN dual additives prepared in the optimized process can retain more than 110% of their initial efficiency after aging for 1750 h in a nitrogen glovebox, but the control PSCs maintain only 50% of their initial efficiency kept in the same conditions. This work provides a new perspective to further improve the efficiency and stability of T-PSCs.

Controllable Skyrmionic Phase Transition between Néel Skyrmions and Bloch Skyrmionic Bubbles in van der Waals Ferromagnet Fe3-δ GeTe2.

The van der Waals (vdW) ferromagnet Fe3-δ GeTe2 has garnered significant research interest as a platform for skyrmionic spin configurations, that is, skyrmions and skyrmionic bubbles. However, despite extensive efforts, the origin of the Dzyaloshinskii-Moriya interaction (DMI) in Fe3-δ GeTe2 remains elusive, making it challenging to acquire these skyrmionic phases in a controlled manner. In this study, it is demonstrated that the Fe content in Fe3-δ GeTe2 has a profound effect on the crystal structure, DMI, and skyrmionic phase. For the first time, a marked increase in Fe atom displacement with decreasing Fe content is observed, transforming the original centrosymmetric crystal structure into a non-centrosymmetric symmetry, leading to a considerable DMI. Additionally, by varying the Fe content and sample thickness, a controllable transition between Néel-type skyrmions and Bloch-type skyrmionic bubbles is achieved, governed by a delicate interplay between dipole-dipole interaction and the DMI. The findings offer novel insights into the variable skyrmionic phases in Fe3-δ GeTe2 and provide the impetus for developing vdW ferromagnet-based spintronic devices.

Significantly Improved Efficiency and Stability of Pure Tin-Based Perovskite Solar Cells with Bifunctional Molecules.

Tin-based perovskite solar cells (TPSCs) have become one of the most prospective photovoltaic materials due to their remarkable optoelectronic properties and relatively low toxicity. Nevertheless, the rapid crystallization of perovskites and the easy oxidization of Sn2+ to Sn4+ make it challenging to fabricate efficient TPSCs. In this work, a piperazine iodide (PI) material with -NH- and -NH2+- bifunctional groups is synthesized and introduced into the PEA0.1FA0.9SnI3-based precursor solution to tune the microstructure, charge transport, and stability of TPSCs. Compared with piperazine (PZ) containing only the -NH- group, the PI additive displays better effects on regulating the microstructure and crystallization, inhibiting Sn2+ oxidation and reducing trap states, resulting in an optimal efficiency of 10.33%. This is substantially better than that of the reference device (6.42%). Benefiting from the fact that PI containing -NH- and -NH2+- groups can passivate both positively charged defects and negatively charged halogen defects, unencapsulated TPSCs modified with the PI material can maintain about 90% of their original efficiency after being kept in a N2 atmosphere for 1000 h, much higher than the value of 47% in reference TPSCs without additives. This work provides a practical method to prepare efficient and stable pure TPSCs.

All-ferroelectric implementation of reservoir computing.

Reservoir computing (RC) offers efficient temporal information processing with low training cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the merits of ferroelectric memristors (e.g., good controllability); however, this has been undemonstrated due to the challenge of developing ferroelectric memristors with distinctly different switching characteristics specific to the reservoir and readout network. Here, we experimentally demonstrate an all-ferroelectric RC system whose reservoir and readout network are implemented with volatile and nonvolatile ferroelectric diodes (FDs), respectively. The volatile and nonvolatile FDs are derived from the same Pt/BiFeO3/SrRuO3 structure via the manipulation of an imprint field (Eimp). It is shown that the volatile FD with Eimp exhibits short-term memory and nonlinearity while the nonvolatile FD with negligible Eimp displays long-term potentiation/depression, fulfilling the functional requirements of the reservoir and readout network, respectively. Hence, the all-ferroelectric RC system is competent for handling various temporal tasks. In particular, it achieves an ultralow normalized root mean square error of 0.017 in the Hénon map time-series prediction. Besides, both the volatile and nonvolatile FDs demonstrate long-term stability in ambient air, high endurance, and low power consumption, promising the all-ferroelectric RC system as a reliable and low-power neuromorphic hardware for temporal information processing.

Electrical switching of ferro-rotational order in nanometre-thick 1T-TaS2 crystals.

Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS2 crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.

Antiferromagnetic to Ferrimagnetic Phase Transition and Possible Phase Coexistence in Polar Magnets (Fe1-xMnx)2Mo3O8 (0 ≤ x ≤ 1).

In the present work, the magnetic properties of a single crystal (Fe1-xMnx)2Mo3O8 (0 ≤ x ≤ 1) have been studied by performing extensive measurements. A detailed magnetic phase diagram is built up, in which the antiferromagnetic state dominates for x ≤ 0.25 and the ferrimagnetic phase arises for x ≥ 0.3. Meanwhile, a sizeable electric polarization of spin origin is commonly observed in all samples, no matter what the magnetic state is. For the samples hosting a ferrimagnetic state, square-like magnetic hysteresis loops are revealed, while the remnant magnetization and coercive field can be tuned drastically by simply varying the Mn content or temperature. A possible coexistence of the antiferromagnetic and ferrimagnetic phases is proposed to be responsible for the remarkable modulation of magnetic properties in the samples.

Two-Dimensional Ultrahigh Unconventional Piezoelectricity Driven by Charge Screening.

In the past decade, piezoelectricity has been explored in a series of two-dimensional (2D) materials for nanoelectromechanical applications, while their piezoelectric coefficients are mostly much lower than those of prevalent piezoceramics. In this paper, we propose an unconventional approach of inducing 2D ultrahigh piezoelectricity dominated by charge screening instead of lattice distortion and show the first-principles evidence of such piezoelectricity in a series of 2D van der Waals bilayers, where the bandgap can be remarkably tuned via applying a moderate vertical pressure. Their polarizations can switch between the screened and unscreened state by a pressure-driven metal-insulator transition, which can be realized via tuning interlayer hybridization or inhomogeneous electrostatic potential by substrate layer to change the band splitting or tuning the relative energy shift between bands utilizing the vertical polarization of the substrate layer. Such 2D piezoelectric coefficients can be unprecedented and orders of magnitude higher than those of previously studied monolayer piezoelectrics, and their high efficiency of energy harvesting in nanogenerators can be expected.

Co-Solvent Engineering Contributing to Achieve High-Performance Perovskite Solar Cells and Modules Based on Anti-Solvent Free Technology.

The pinhole-free and defect-less perovskite film is crucial for achieving high efficiency and stable perovskite solar cells (PSCs), which can be prepared by widely used anti-solvent crystallization strategies. However, the involvement of anti-solvent requires precise control and inevitably brings toxicity in fabrication procedures, which limits its large-scale industrial application. In this work, a facile and effective co-solvent engineering strategy is introduced to obtain high- quality perovskite film while avoiding the usage of anti-solvent. The uniform and compact perovskite polycrystalline films have been fabricated through the addition of co-solvent that owns strong coordination capacity with perovskite components , meanwhile possessing the weaker interaction with main solvent . With those strategies, a champion power conversion efficiency (PCE) of 22% has been achieved with the optimal co-solvent, N-methylpyrrolidone (NMP) and without usage of anti-solvent. Subsequently, PSCs based on NMP show high repeatability and good shelf stability (80% PCE remains after storing in ambient condition for 30 days). Finally, the perovskite solar module (5 × 5 cm) with 7 subcells connects in series yielding champion PCE of 16.54%. This strategy provides a general guidance of co-solvent selection for PSCs based on anti-solvent free technology and promotes commercial application of PSCs.

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.

Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of the tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effects can be controlled by imposing various epitaxial strains. The adjustment of the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. Our work paves the way for fabricating low-power devices and further reducing energy consumption in electronics.