Interfacial Gated Graphene Photodetector with Broadband Response.

A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that in the graphene/SiO2/Si photodetector. We found that this improvement was due to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. The photoresponsivity of the graphene/HfO2/Si photodetector is as high as 45.8 A W-1. Germanium and amorphous MoS2 (a-MoS2) were used to prepare graphene/HfO2/Ge and graphene/HfO2/a-MoS2 photodetectors, further demonstrating the high efficiency of the interfacial gating mechanism for photodetection. Because of the 0.196 eV bandgap of a-MoS2, which was verified in our previous report, the graphene/HfO2/a-MoS2 photodetector realized ultrabroadband photodetection over the range from 473 nm (visible) to 2712 nm (mid-infrared) at room temperature with photoresponsivity as high as 5.36 A W-1 and response time as fast as 68 µs, which represent significant improvements from the corresponding properties of the pure a-MoS2 photodetectors in our previous report and are comparable with those of state-of-the-art broadband photodetectors. By taking full advantage of the interfacial gating mechanism, a fast response, high photoresponsivity and ultrabroadband photodetection were achieved simultaneously. These interfacial gated graphene photodetectors also offer simple fabrication and full semiconductor process compatibility. The advantages described here indicate that the proposed photodetectors have significant potential for use in electronic and optoelectronic applications and offer a new path toward the development of ultrabroadband photodetectors.

Ultralow dark current infrared photodetector based on SnTe quantum dots beyond 2 µm at room temperature.

Quantum dots (QDs) are promising materials used for room temperature mid-infrared (MIR) photodetector due to their solution processing, compatibility with silicon and tunability of band structure. Up to now, HgTe QDs is the most widely studied material for MIR detection. However, photodetectors assembled with HgTe QDs usually work under cryogenic cooling to improve photoelectric performance, greatly limiting their application at room temperature. Here, less-toxic SnTe QDs were controllably synthesized with high crystallinity and uniformity. Through proper ligand exchange and annealing treatment, the photoconductive device assembled with SnTe QDs demonstrated ultralow dark current and broadband photo-electric response from visible light to 2 µm at room temperature. In addition, the visible and near infrared photo-electric performance of the SnTe QDs device were well maintained even standing 15 d in air. This excellent performance was due to the effective protection of the ligand on surface of the QDs and the effective transport of photo-carriers between the SnTe interparticles. It would provide a new idea for environmentally friendly mid-IR photodetectors working at room temperature.

Photon energy-dependent timing jitter and spectrum resolution research based on time-resolved SNSPDs.

Superconducting nanowire-based single-photon detectors (SNSPDs) are promising devices, especially with unrivalled timing jitter ability. However, the intrinsic physical mechanism and the ultimate limit of the timing jitter are still unknown. Here, we investigated the timing jitter of the SNSPD response to different excitation wavelengths from visible to near-infrared (NIR) as a function of the relative bias currents and the substrate temperature. We established a physical model based on a 1D electrothermal model to describe the hotspot evolution and thermal diffusion process after a single photon irradiated the nanowire. The simulations are in good agreement with the experimental results and reveal the other influencing factors and potential ways to further improve the timing jitter of SNSPDs. Finally, we introduce a new time-resolved approach, where by collecting the instrument response function (IRF) of SNSPDs, the wavelength of the incident photons can be easily discriminated with a resolution below 80 nm.

Light-Driven WSe2-ZnO Junction Field-Effect Transistors for High-Performance Photodetection.

Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap-assisted gain (G) mechanism. However, the high-gain photodetectors benefitting from long carrier lifetime often possess slow response time (t) due to the inherent G-t tradeoff. Here, a light-driven junction field-effect transistor (LJFET), consisting of an n-type ZnO belt as the channel material and a p-type WSe2 nanosheet as a photoactive gate material, to break the G-t tradeoff through decoupling the gain from carrier lifetime is reported. The photoactive gate material WSe2 under illumination enables a conductive path for externally applied voltage, which modulates the depletion region within the ZnO channel efficiently. The gain and response time are separately determined by the field effect modulation and the switching speed of LJFET. As a result, a high responsivity of 4.83 × 103 A W-1 with a gain of ≈104 and a rapid response time of ≈10 µs are obtained simultaneously. The LJFET architecture offers a new approach to realize high-gain and fast-response photodetectors without the G-t tradeoff.

Ultra-Narrow Band Mid-Infrared Perfect Absorber Based on Hybrid Dielectric Metasurface.

Mid-infrared perfect absorbers (PAs) based on metamaterials have many applications in material analysis and spectral detection thanks to the associated strong light-matter interaction. Most of the PAs are built as 'metal nanostructure'-insulator-metals (MIM). In this paper, we propose an ultra-narrow band absorber based on dielectric metasurface with a metal film substrate. The absorptance comes from the plasmonic absorption in the metal film, where the absorption is enhanced (while the band of that is compressed) by the super cavity effect of the dielectric metasurface. Based on our numerical calculation, the full-width at half-maximum (FWHM) can reach 67 nm at 8 µm (8‱), which is more than two orders of magnitude smaller than the resonance wavelength and much narrower than the theoretical FWHMs of MIM absorbers. Moreover, we studied their application in infrared thermal imaging, which also has more benefits than MIM absorbers. This kind of hybrid dielectric metasurface provides a new route to achieve ultra-narrow band perfect absorbers in the mid-infrared regime and can be broadly applied in detectors, thermal emitters and bio-spectroscopy.

Flexible Mid-Infrared Radiation Modulator with Multilayer Graphene Thin Film by Ionic Liquid Gating.

Electrochromic devices with tunable infrared radiation can meet the steadily growing demands in energy saving and thermal camouflage applications. Here, a mid-infrared radiation modulator based on flexible multilayer graphene thin films gated by nonvolatile ionic liquid on both rigid and flexible substrates is designed. The thermal emissivity of the device decreases nearly 80% within 2 s with the accumulation of anions in the multilayer graphene. The effective reduction of the emissivity results from the dramatic decrease in film's intraband absorption of graphene according to the Drude model. It has been demonstrated that with electrical control the film's mid-infrared radiation is capable of adapting to different backgrounds for thermal camouflage applications. Moreover, a sandwiched structure with stacked graphene films is designed to realize structural flexibility and double-sided radiation control for a wide range of potential applications, including energy-efficient buildings, infrared sources, and electrochromic displays.

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter.

Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe2, while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe2 transistors, we demonstrate a complementary inverter with gain values as high as 9 at VDD = 5 V.

Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.

In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we found that the potential steps are formed in the vicinity of the electrodes/MoTe2 interface due to the doping of the MoTe2 by the metal contacts. The potential step dominates the separation of photoexcited electron-hole pairs in short-circuit condition or with small V sd biased. Based on these findings, we infer that the asymmetric contact cross-section between MoTe2-source and MoTe2-drain electrodes is the reason to form non-zero net current and photovoltaic response. Furthermore, MoTe2 phototransistor shows a faster response in short-circuit condition than that with higher biased V sd within sub-millisecond, and its spectral range can be extended to the infrared end of 1550 nm.

Hybrid WSe2-In2O3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing low-dimensional phototransistors with high responsivity and low dark currents over broad-band spectra still remains a great challenge because of the trade-offs in the potential architectures. In this work, we report a hybrid phototransistor consisting of a single In2O3 nanowire as the channel material and a multilayer WSe2 nanosheet as the decorating sensitizer for photodetection. Our devices show high responsivities of 7.5 × 105 and 3.5 × 104 A W-1 and ultrahigh detectivities of 4.17 × 1017 and 1.95 × 1016 jones at the wavelengths of 637 and 940 nm, respectively. The superior detectivity of the hybrid architecture arises from the extremely low dark currents and the enhanced photogating effect in the depletion regime by the unique design of energy band alignment of the channel and sensitizer materials. Moreover, the visible to near-infrared absorption properties of the multilayer WSe2 nanosheet favor a broad-band spectral response for the devices. Our results pave the way for developing ultrahigh-sensitivity photodetectors based on low-dimensional hybrid architectures.

Electrical Contacts in Monolayer Arsenene Devices.

Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

Dielectric-Like Behavior of Graphene in Au Plasmon Resonator.

Graphene has proven to be a promising conductive layer in fabricating optical plasmon resonators on insulator substrate using electron beam lithography and has the potential to construct electrically controlled active plasmon resonators. In this study, we investigate the effect of graphene on plasmon resonance using graphene and Au plasmon resonator system as a model at visible and near-infrared wavelength. Our experiment data show that the presence of graphene does not weaken and annihilate the plasmon resonance peaks, instead it predominantly makes the peaks redshift, which is similar to the behavior of depositing SiO2 film on Au plasmon resonators. This fact indicates that graphene predominantly exhibits dielectric-like behavior at visible and near-infrared wavelength, which can be attributed to the low carrier density in graphene compared with metals.

Fast Adaptive Thermal Camouflage Based on Flexible VO2/Graphene/CNT Thin Films.

Adaptive camouflage in thermal imaging, a form of cloaking technology capable of blending naturally into the surrounding environment, has been a great challenge in the past decades. Emissivity engineering for thermal camouflage is regarded as a more promising way compared to merely temperature controlling that has to dissipate a large amount of excessive heat. However, practical devices with an active modulation of emissivity have yet to be well explored. In this letter we demonstrate an active cloaking device capable of efficient thermal radiance control, which consists of a vanadium dioxide (VO2) layer, with a negative differential thermal emissivity, coated on a graphene/carbon nanotube (CNT) thin film. A slight joule heating drastically changes the emissivity of the device, achieving rapid switchable thermal camouflage with a low power consumption and excellent reliability. It is believed that this device will find wide applications not only in artificial systems for infrared camouflage or cloaking but also in energy-saving smart windows and thermo-optical modulators.

Photovoltaic Effect and Evidence of Carrier Multiplication in Graphene Vertical Homojunctions with Asymmetrical Metal Contacts.

Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metal-graphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation.

Black phosphorus has recently emerged as a promising material for high-performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap, and anisotropic electronic properties. Dynamical evolution of photoexcited carriers and the induced transient change of electronic properties are critical for materials' high-field performance but remain to be explored for black phosphorus. In this work, we perform angle-resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photoexcitation. We find that the anisotropy of reflectivity is enhanced in the pump-induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise attractive possibilities of creating high-field, angle-sensitive electronic, optoelectronic, and remote sensing devices exploiting the dynamical electronic anisotropy with black phosphorus.

Linearly polarized light emission from quantum dots with plasmonic nanoantenna arrays.

Polarizers provide convenience in generating polarized light, meanwhile their adoption raises problems of extra weight, cost, and energy loss. Aiming to realize polarizer-free polarized light sources, herein, we present a plasmonic approach to achieve direct generation of linearly polarized optical waves at the nanometer scale. Periodic slot nanoantenna arrays are fabricated, which are driven by the transition dipole moments of luminescent semiconductor quantum dots. By harnessing interactions between quantum dots and scattered fields from the nanoantennas, spontaneous emission with a high degree of linear polarization is achieved from such hybrid antenna system with polarization perpendicular to antenna slot. We also demonstrate that the polarization is engineerable in aspects of both spectrum and magnitude by tailoring plasmonic resonance of the antenna arrays. Our findings will establish a basis for the development of innovative polarized light-emitting devices, which are useful in optical displays, spectroscopic techniques, optical telecommunications, and so forth.

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.

The often observed p-type conduction of single carbon nanotube field-effect transistors is usually attributed to the Schottky barriers at the metal contacts induced by the work function differences or by the doping effect of the oxygen adsorption when carbon nanotubes are exposed to air, which cause the asymmetry between electron and hole injections. However, for carbon nanotube thin-film transistors, our contrast experiments between oxygen doping and electrostatic doping demonstrate that the doping-generated transport barriers do not introduce any observable suppression of electron conduction, which is further evidenced by the perfect linear behavior of transfer characteristics with the channel length scaling. On the basis of the above observation, we conclude that the environmental adsorbates work by more than simply shifting the Fermi level of the CNTs; more importantly, these adsorbates cause a poor gate modulation efficiency of electron conduction due to the relatively large trap state density near the conduction band edge of the carbon nanotubes, for which we further propose quantitatively that the adsorbed oxygen-water redox couple is responsible.

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles.

The output power of the light from GaN-based light-emitting diodes (LEDs) was enhanced by fabricating gold (Au) nanoparticles on the surface of p-GaN. Quasi-aligned Au nanoparticle arrays were prepared by depositing Au thin film on an aligned suspended carbon nanotube thin film surface and then putting the Au-CNT system on the surface of p-GaN and thermally annealing the sample. The size and position of the Au nanoparticles were confined by the carbon nanotube framework, and no other additional residual Au was distributed on the surface of the p-GaN substrate. The output power of the light from the LEDs with Au nanoparticles was enhanced by 55.3% for an injected current of 100 mA with the electrical property unchanged compared with the conventional planar LEDs. The enhancement may originate from the surface plasmon effect and scattering effect of the Au nanoparticles.

The dependence of graphene Raman D-band on carrier density.

Raman spectroscopy has been an integral part of graphene research and can provide information about graphene structure, electronic characteristics, and electron-phonon interactions. In this study, the characteristics of the graphene Raman D-band, which vary with carrier density, are studied in detail, including the frequency, full width half-maximum, and intensity. We find the Raman D-band frequency increases for hole doping and decreases for electron doping. The Raman D-band intensity increases when the Fermi level approaches half of the excitation energy and is higher in the case of electron doping than that of hole doping. These variations can be explained by electron-phonon interaction theory and quantum interference between different Raman pathways in graphene. The intensity ratio of Raman D- and G-band, which is important for defects characterization in graphene, shows a strong dependence on carrier density.

Fabrication of all-carbon nanotube electronic devices on flexible substrates through CVD and transfer methods.

SWNT thin films with different nanotube densities are fabricated by CVD while controlling the concentration of catalyst and growth time. Three layers of SWNT films are transferred to flexible substrates serving as electrodes and channel materials, respectively. All-carbon nanotube TFTs with an on/off ratio as high as 10(5) are obtained. Inverters are fabricated on top of the flexible substrates with symmetric input/output behavior.