Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology.

Neuromorphic computing is a new field of information technology, which is inspired by the biomimetic properties of the memristor as an electronic synapse and neuron. If there are electronic receptors that can transmit exterior impulses to the internal nervous system, then the use of memristors can be expanded to artificial nerves. In this study, a layer type memristor is used to build an artificial nociceptor in a very feasible and straightforward manner. An artificial nociceptor is demonstrated here through the fabrication and characterization of a cobalt-doped zinc oxide (CZO)/Au based memristor. In order to increase threshold switching performance, the surface effects of the CZO layer are eliminated by adding cobalt cobalt-doped zinc oxide (CZO) layer between the P++-Si and Au electrodes. Allodynia, hyperalgesia, threshold, and relaxation are the four distinct nociceptive behaviours that the device displays based on the strength, rate of relapse, and duration of the external stimuli. The electrons that are trapped in or released from the CZO layer's traps are responsible for these nociceptive behaviours. A multipurpose nociceptor performance is produced by this type of CZO-based device, which is crucial for artificial intelligence system applications such as neural integrated devices with nanometer-sized characteristics.

Organic and inorganic nanomaterials: fabrication, properties and applications.

Nanomaterials and nanoparticles are a burgeoning field of research and a rapidly expanding technology sector in a wide variety of application domains. Nanomaterials have made exponential progress due to their numerous uses in a variety of fields, particularly the advancement of engineering technology. Nanoparticles are divided into various groups based on the size, shape, and structural morphology of their bodies. The 21st century's defining feature of nanoparticles is their application in the design and production of semiconductor devices made of metals, metal oxides, carbon allotropes, and chalcogenides. For the researchers, these materials then opened a new door to a variety of applications, including energy storage, catalysis, and biosensors, as well as devices for conversion and medicinal uses. For chemical and thermal applications, ZnO is one of the most stable n-type semiconducting materials available. It is utilised in a wide range of products, from luminous materials to batteries, supercapacitors, solar cells to biomedical photocatalysis sensors, and it may be found in a number of forms, including pellets, nanoparticles, bulk crystals, and thin films. The distinctive physiochemical characteristics of semiconducting metal oxides are particularly responsible for this. ZnO nanostructures differ depending on the synthesis conditions, growth method, growth process, and substrate type. A number of distinct growth strategies for ZnO nanostructures, including chemical, physical, and biological methods, have been recorded. These nanostructures may be synthesized very simply at very low temperatures. This review focuses on and summarizes recent achievements in fabricating semiconductor devices based on nanostructured materials as 2D materials as well as rapidly developing hybrid structures. Apart from this, challenges and promising prospects in this research field are also discussed.