Photoinduced Self-Gating of Perovskite Photovoltaic Cells in Ionic Liquid.

We demonstrate that the power conversion efficiency (PCE), photocurrent, and fill factor (FF) of perovskite solar cells (PSC) can be significantly improved by the photoinduced self-gating in ionic liquids (ILs) via n-doping of the carbon nanotube (CNT) top electrode on the fullerene electron transport layer (ETL). CNTs, graphene, and other carbon electrodes have been proven to be stable electrodes for PSC, but efficiency was not high. We have previously shown that the performance of PSCs with CNT electrodes can be improved by IL gating with gate voltage (Vg) applied from an external power source. Here we demonstrate that effective self-gating in ILs is possible by a photoinduced process, without an external source. The open circuit voltage (Voc) generated by the PSC itself can be applied to the CNT/C60 electrode as Vg leading to photogating. This self-gating with Voc is compared to photocharging of CNTs in ILs without any gating for two types of fullerene ETLs: C60 and C70, Two types of ILs, DEME-TFSI and BMIM-BF4, are tested for two types of nanotubes electrodes: single wall (SWCNT), and multiwall (MWCNT). The resulting improvements are analyzed using the effective diode-circuit (DC) and the drift-diffusion (DD) models. Self-gating allows the PCE improvement from 3-5% to 10-11% for PSCs with a thick ETL, while for optimal combination of a thin SWCNT/ETL with added layers for improved stability, the PCE reached 13.2% in DEME-TFSI IL.

Ionically Gated Small-Molecule OPV: Interfacial Doping of Charge Collector and Transport Layer.

We demonstrate an improvement in the performance of organic photovoltaic (OPV) systems based on small molecules by ionic gating via controlled reversible n-doping of multi-wall carbon nanotubes (MWCNTs) coated on fullerene electron transport layers (ETLs): C60 and C70. Such electric double-layer charging (EDLC) doping, achieved by ionic liquid (IL) charging, allows tuning of the electronic concentration in MWCNTs and the fullerene planar acceptor layers, increasing it by orders of magnitude. This leads to the decrease of the series and increase of the shunt resistances of OPVs and allows use of thick (up to 200 nm) ETLs, increasing the durability of OPVs. Two stages of OPV enhancement are described upon the increase of gating bias Vg: at small (or even zero) Vg, the extended interface of ILs and porous transparent MWCNTs is charged by gating, and the fullerene charge collector is significantly improved, becoming an ohmic contact. This changes the S-shaped J-V curve via improving the electron collection by an n-doped MWCNT cathode with an ohmic interfacial contact. The J-V curves further improve at higher gating bias Vg due to the increase of the Fermi level and decrease of the MWCNT work function. At the next qualitative stage, the acceptor fullerene layer becomes n-doped by electron injection from MWCNTs while ions of ILs penetrate into the fullerene. At this step, the internal built-in field is created within OPV, which helps in exciton dissociation and charge separation/transport, increasing further the Jsc and the fill factor. The ionic gating concept demonstrated here for most simple classical planar small-molecule OPV cells can be potentially applied to more complex highly efficient hybrid devices, such as perovskite photovoltaic with an ETL or a hole transport layer, providing a new way to tune their properties via controllable and reversible interfacial doping of charge collectors and transport layers.