Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system.

Toward drastic enhancement of thermoelectric power factor, quantum confinement effect proposed by Hicks and Dresselhaus has intrigued a lot of researchers. There has been much effort to increase power factor using step-like density-of-states in two-dimensional electron gas (2DEG) system. Here, we pay attention to another effect caused by confining electrons spatially along one-dimensional direction: multiplied 2DEG effect, where multiple discrete subbands contribute to electrical conduction, resulting in high Seebeck coefficient. The power factor of multiple 2DEG in GaAs reaches the ultrahigh value of ~100 µWcm-1 K-2 at 300 K. We evaluate the enhancement rate defined as power factor of 2DEG divided by that of three-dimensional bulk. The experimental enhancement rate relative to the theoretical one of conventional 2DEG reaches anomalously high (~4) in multiple 2DEG compared with those in various conventional 2DEG systems (~1). This proposed methodology for power factor enhancement opens the next era of thermoelectric research.

Quantitative characterization of built-in potential profile across GaAs p-n junctions using Kelvin probe force microscopy with qPlus sensor AFM.

The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers. Kelvin probe force microscopy (KPFM) is a powerful technique for measuring the surface potential at a high spatial resolution. However, the measured surface potential often deviates from the potential deep in the bulk owing to certain factors. Here, we performed KPFM measurements across the p-n junction, in which such factors were eliminated as much as possible by selecting the sample, force sensor, and measurement mode. The measured surface potential distribution agrees well with the line shape of the simulated bulk potential. Our results demonstrate that KPFM is capable of quantitatively characterizing potential distributions whose changes occur on the order of 10 nm.

Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface.

We demonstrate an extended short-wave infrared (e-SWIR) photodetector composed of an InAs/GaAs(111)A heterostructure with interface misfit dislocations. The layer structure of the photodetector consists simply of an n-InAs optical absorption layer directly grown with a thin undoped-GaAs spacer layer on n-GaAs by molecular beam epitaxy. The lattice mismatch was abruptly relaxed by forming a misfit dislocation network at the initial stage of the InAs growth. We found high-density threading dislocations (1.5 × 109 cm-2) in the InAs layer. The current-voltage characteristics of the photodetector at 77 K had a very low dark current density (<1 × 10-9 A cm-2) at a positive applied voltage (electrons flow from n-GaAs to n-InAs) of up to ∼+1 V. Simulation of the band structure revealed that the direct connection of GaAs and InAs and the formation of interfacial states by the misfit dislocations play significant positive roles in suppressing dark current. Under illumination with e-SWIR light at 77 K, a clear photocurrent signal was observed with a 2.6 µm cutoff wavelength, which is consistent with the bandgap of InAs. We also demonstrated e-SWIR detection at room temperature with a 3.2 µm cutoff wavelength. The maximum detectivity at 294 K exceeds 2 × 108 cm Hz0.5 W-1 for the detection of e-SWIR light at 2 µm.

Eigenmode symmetry assignment of triangular-lattice photonic crystal slabs and their Dirac cones materialized by effective degeneracy in the mid-infrared region.

We measured angle-resolved reflection spectra of triangular-lattice photonic crystal slabs fabricated in a silicon-on-insulator wafer in the mid-infrared region. We achieved a high angle-resolution measurement by means of our homemade optical setup integrated in the sample chamber of an FT-IR spectrometer. By examining the reflection peak frequency as a function of the lateral component of the wave vector of the incident light and applying the selection rules expected from the spatial symmetry of electromagnetic eigenmodes in C6v-symmetric structures, we successfully obtained the dispersion relation and the mode symmetry of the photonic crystal slabs, which agreed well with numerical calculations by the finite element method. We also found the redistribution of diffraction loss between A1- and E1-symmetric modes, which was caused by the Dirac-cone formation due to their effective degeneracy.

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy.

We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement compared to (001), where a wetting layer is present. This leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to the strong anti-binding character of the positive-charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting (FSS) ∼100 µeV), whereas for the three-fold symmetric (111)A counterpart, this figure of merit is reduced by about one order of magnitude. In all these cases, we do not observe any size dependence of the fine structure splitting. Heavy-hole/light-hole mixing is present in all the studied cases, leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine structure splitting, and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.

Patchwork metasurface quantum well photodetectors with broadened photoresponse.

Complex lightwave manipulation such as broadband absorption has been realized with metasurfaces based on laterally arranged metal-dielectric-metal cavities with different geometries. However, application of these metasurfaces for optoelectronic devices by incorporating functional dielectrics remains challenging. Here, we integrate a quantum well infrared photodetector (QWIP) with a metasurface made of a patchwork of square cavities with different dimensions arranged in a subwavelength unit cell. Our detector realizes wideband photoresponse approaching the entire responsivity spectrum of the QWIP-single-sized square cavities can utilize only 60% of the possible bandwidth-and external quantum efficiencies of up to 78% at 6.8 µm. Our highly flexible design scheme enables integration of photodetectors and metasurfaces with arbitrary arrangements of cavities selectively responding to incidence with a specific wavefront.

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates.

Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III-V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting layer. These are appealing features for quantum dot lasing, thanks to the large density of quantum emitters and a truly 3D lateral confinement. However, the intimate photophysics of this class of nanostructures has not yet been investigated. Here, we address the main optical and electronic properties of s-shell excitons in individual quantum dots grown on (311)A substrates with photoluminescence spectroscopy experiments. We show the presence of neutral exciton and biexciton as well as positive and negative charged excitons. We investigate the origins of spectral broadening, identifying them in spectral diffusion at low temperature and phonon interaction at higher temperature, the presence of fine interactions between electron and hole spin, and a relevant heavy-hole/light-hole mixing. We interpret the level filling with a simple Poissonian model reproducing the power excitation dependence of the s-shell excitons. These results are relevant for the further improvement of this class of quantum emitters and their exploitation as single-photon sources for low-density samples as well as for efficient lasers for high-density samples.

Angle-resolved reflection spectra of Dirac cones in triangular-lattice photonic crystal slabs.

The dispersion relation and the angle-resolved reflection spectra of triangular-lattice photonic crystal slabs of the C6v symmetry were examined by the finite element method. The Dirac-cone dispersion relation on the Γ point of the reciprocal space was confirmed. The reflection spectra showed unique selection rules that agreed with the analytical calculation by the k · p perturbation theory. The distortion of the liner dispersion relation of the Dirac cones due to diffraction loss was also reproduced well by the numerical calculation, while we found distortion-free Dirac cones materialized with E2-symmetric modes.

Mid-IR Dirac-cone dispersion relation materialized in SOI photonic crystal slabs.

We materialized the isotropic Dirac-cone dispersion relation in the mid-infrared range by fabricating photonic crystal slabs of the C4v symmetry in SOI (silicon-on-insulator) wafers by electron beam lithography. The dispersion relation was examined by the angle-resolved reflection spectra with our home-made high-resolution apparatus, which showed a good agreement with the dispersion relation and the reflection spectra calculated by the finite element method. The reflection spectra also agreed with the selection rules derived from the spatial symmetry of the Dirac-cone modes, which proved to be a powerful tool for the mode assignment.

Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates.

Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.

Synchronously wired infrared antennas for resonant single-quantum-well photodetection up to room temperature.

Optical patch antennas sandwiching dielectrics between metal layers have been used as deep subwavelength building blocks of metasurfaces for perfect absorbers and thermal emitters. However, for applications of these metasurfaces for optoelectronic devices, wiring to each electrically isolated antenna is indispensable for biasing and current flow. Here we show that geometrically engineered metallic wires interconnecting the antennas can function to synchronize the optical phases for promoting coherent resonance, not only as electrical conductors. Antennas connected with optimally folded wires are applied to intersubband infrared photodetectors with a single 4-nm-thick quantum well, and a polarization-independent external quantum efficiency as high as 61% (responsivity 3.3 A W-1, peak wavelength 6.7 µm) at 78 K, even extending to room temperature, is demonstrated. Applications of synchronously wired antennas are not limited to photodetectors, but are expected to serve as a fundamental architecture of arrayed subwavelength resonators for optoelectronic devices such as emitters and modulators.

Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices.

There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal-semiconductor-metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although highly Si-doped n-GaAs surfaces can allow an ohmic contact without alloying, conditions for realizing nonalloyed ohmic contacts to other n-GaAs surfaces, originally buried inside but exposed by removing the substrate, have yet to be studied. We discovered that nonalloyed ohmic contacts to initially buried surfaces with a practically low contact resistivity down to 77 K can be realized by fulfilling certain requirements, specifically keeping the Si-doping concentration within a narrow range of 7.5 × 1018 to 1.25 × 1019 cm-3 and setting the growth temperature of the succeeding upper layers to a low value of 530 °C.

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers.

We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown with thicker InAs layers (≥3 ML) are under compressive strain. As the InAs thickness is increased above 5 ML, the insertion of the InAs layer becomes less effective in the strain relaxation, leaving residual strain in GaSb films. This leads to the elastic deformation of the GaSb lattice, giving rise to the increase in the peak width of X-ray rocking curves.

Optically Imaged Striped Domains of Nonequilibrium Electronic and Nuclear Spins in a Fractional Quantum Hall Liquid.

Using photoluminescence microscopy enhanced by magnetic resonance, we visualize in real space both electron and nuclear polarization occurring in nonequilibrium fraction quantum Hall (FQH) liquids. We observe stripelike domain regions comprising FQH excited states which discretely form when the FQH liquid is excited by a source-drain current. These regions are deformable and give rise to bidirectionally polarized nuclear spins as spin-resolved electrons flow across their boundaries.

Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy.

The interaction between nitrogen (N) impurity states in III-V compounds plays a key role in controlling optoelectronic properties of the host materials. Here, we use scanning tunneling microscopy to characterize the spatial distribution and electronic properties of N impurity states in dilute GaNAs. We demonstrated that the N impurity states can be directly visualized by taking empty state current images using the multipass scanning method. The N impurity states broadened over several nanometers and exhibited a highly anisotropic distribution with a bowtie-like shape on the GaAs(110) surface, which can be explained by anisotropic propagation of strain along the zigzag chains of Ga and As atoms in the {110} plane. Our experimental findings provide strong insights into a possible role of N impurity states in modifying properties of the host materials.

Scanning Fabry-Pérot interferometer with largely tuneable free spectral range for high resolution spectroscopy of single quantum dots.

We report on the implementation of a scanning Fabry-Pérot interferometer for photoluminescence spectroscopy investigation. We choose a conveniently small reflectivity of the two planar semitransparent mirrors which, in spite of a moderate cavity finesse, ensures a good mechanical stability over a long time. We also exploit the large tuneability of the cavity length (i.e., of the free spectral range) for changing the spectral resolution over two order of magnitude (from ~300 µeV to ~4 µeV in full width at half maximum). Such a characteristic easily allows to scan both sharp and broad luminescence bands. We test our Fabry-Pérot interferometer on sharp photoluminescence lines resulting from excitonic recombination in self-assembled GaAs quantum dots. We demonstrate the ability of our system to resolve linewidth as small as 4 µeV.

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells.

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.

Self-assembly of concentric quantum double rings.

We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.