RESUMO
Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.
RESUMO
Compact domain features have been observed in spin crossover [Fe{H2B(pz)2}2(bipy)] molecular thin film systems via soft x-ray absorption spectroscopy and photoemission electron microscopy. The domains are in a mixed spin state that on average corresponds to roughly 2/3 the high spin occupation of the pure high spin state. Monte Carlo simulations support the presence of intermolecular interactions that can be described in terms of an Ising model in which interactions beyond nearest-neighbors cannot be neglected. This suggests the presence of short-range order to permit interactions between molecules beyond nearest neighbor that contribute to the formation of largely high spin state domains structure. The formation of a spin state domain structure appears to be the result of extensive cooperative effects.