Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH4/N2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH4/N2/N2O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiOx and SiNx films. Nanocrystalline phases of Si as well as α- and ß-Si3N4 were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.

Influence of Annealing on the Dielectric Properties of Zn-SiO2/Si Nanocomposites Obtained in "Hot" Implantation Conditions.

This paper presents the results of AC electrical measurements of Zn-SiO2/Si nanocomposites obtained by ion implantation. Implantation of Zn ions was carried out into thermally oxidized p-type silicon substrates with energy of 150 keV and fluence of 7.5 × 1016 ion·cm-2 at a temperature of 773 K, and is thus called implantation in "hot" conditions. The samples were annealed in ambient air for 60 min at 973 K. Electrical measurements of Zn-SiO2/Si nanocomposites were carried out before and after annealing. Measurements were performed in the temperature range from 20 K to 375 K. The measurement parameters were the resistance Rp, the capacitance Cp, the phase shift angle θ and the tangent of loss angle tanδ, as a function of the frequency in the range from 50 Hz to 5 MHz. Based on the characteristics σ(f) and the Jonscher power law before and after sample annealing, the values of the exponent s were calculated depending on the measurement temperature. Based on this, the conductivity models were matched. Additionally, the real and imaginary parts of the dielectric permittivity were determined, and on their basis, the polarization mechanisms in the tested material were also determined.