Entropy-driven docosahedral short-range order in simple liquids and glasses.

The energetically favored icosahedral structure has been seen as the central figure for describing the local structure of simple liquids and glasses. Although regular icosahedral structures are rarely found, it is accepted that distorted icosahedral structures occur in simple liquids and glasses. However, which local structure dominates and why it is more frequent than the others remain unanswered questions. In this study, by using a recently developed structure descriptor, we show that docosahedral structures are the most favored not only in models of simple liquids and glasses but also in an experimental colloid glass. We also show that the the predominance of docosahedral structures is entropy-driven. Our findings represent a significant milestone towards comprehending mysterious phenomena such as supercooling, glass transition, and crystallization, where local structures play a key role.

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO2 would be a key to synthesize a dangling-bond-free GaN/SiO2 interface. Here, we predict that a silicon oxynitride (Si4O5N3) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si4O5N3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si4O5N3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si4O5N3 structure.

Describing polyhedral tilings and higher dimensional polytopes by sequence of their two-dimensional components.

Polyhedral tilings are often used to represent structures such as atoms in materials, grains in crystals, foams, galaxies in the universe, etc. In the previous paper, we have developed a theory to convert a way of how polyhedra are arranged to form a polyhedral tiling into a codeword (series of numbers) from which the original structure can be recovered. The previous theory is based on the idea of forming a polyhedral tiling by gluing together polyhedra face to face. In this paper, we show that the codeword contains redundant digits not needed for recovering the original structure, and develop a theory to reduce the redundancy. For this purpose, instead of polyhedra, we regard two-dimensional regions shared by faces of adjacent polyhedra as building blocks of a polyhedral tiling. Using the present method, the same information is represented by a shorter codeword whose length is reduced by up to the half of the original one. Shorter codewords are easier to handle for both humans and computers, and thus more useful to describe polyhedral tilings. By generalizing the idea of assembling two-dimensional components to higher dimensional polytopes, we develop a unified theory to represent polyhedral tilings and polytopes of different dimensions in the same light.

How to describe disordered structures.

Disordered structures such as liquids and glasses, grains and foams, galaxies, etc. are often represented as polyhedral tilings. Characterizing the associated polyhedral tiling is a promising strategy to understand the disordered structure. However, since a variety of polyhedra are arranged in complex ways, it is challenging to describe what polyhedra are tiled in what way. Here, to solve this problem, we create the theory of how the polyhedra are tiled. We first formulate an algorithm to convert a polyhedron into a codeword that instructs how to construct the polyhedron from its building-block polygons. By generalizing the method to polyhedral tilings, we describe the arrangements of polyhedra. Our theory allows us to characterize polyhedral tilings, and thereby paves the way to study from short- to long-range order of disordered structures in a systematic way.

Germanium-Vacancy Single Color Centers in Diamond.

Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

Modifying the interlayer interaction in layered materials with an intense IR laser.

We propose a transient interlayer compression in two-dimensional compound materials by using an intense IR laser resonant with the out-of-plane optical phonon mode (A(2u) mode). As a test case, we studied bilayer hexagonal boron nitride (h-BN), which is one of the compound layered materials. Excited state molecular dynamics calculations using time-dependent density functional theory show an 11.3% transient interlayer contraction of h-BN due to an interlayer dipole-dipole attraction of the laser-pumped A(2u) mode. These results are applicable to other layered compound materials. Such layered materials are a good material for nanospace chemistry, e.g., intercalating molecules and acting with them, and IR irradiation to contract the interlayer distance could provide a new route for chemical reactions under pressure. The duration of the contraction is at least 1 ps in the current simulation, which is observable by high-speed electron-beam diffraction measurements.

Universal medium-range order of amorphous metal oxides.

We propose that the structure of amorphous metal oxides can be regarded as a dual-dense-random-packing structure, which is a superposition of the dense random packing of metal atoms and that of oxygen atoms. Our ab initio molecular dynamics simulations show that the medium-range order of amorphous HfO2, ZrO2, TiO2, In2O3, Ga2O3, Al2O3, and Cu2O is characterized by the pentagonal-bipyramid arrangement of metal atoms and that of oxygen atoms, and prove the validity of our dual-random-sphere-packing model. In other words, we find that the pentagonal medium-range order is universal independent of type of metal oxide.

Shallow donor state due to nitrogen-hydrogen complex in diamond.

Based on an ab initio calculation, we propose a possible shallowing of a nitrogen (N) donor in diamond, in contrast to the traditional thinking that it is very deep. A complex defect of N and hydrogen (H), N-H-N, should be much shallower than an isolated N donor. A qualitative scenario for formation of the N-H-N defects is presented. The existence of this complex is strongly suggested by a recent discovery of a new muonium center in N-rich diamond.