Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

Ultraclean emission from InAsP quantum dots in defect-free wurtzite InP nanowires.

We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor-liquid-solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ ~ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 µeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.

Mode localization and band-gap formation in defect-free photonic quasicrystals.

Defects in photonic crystals are local regions in which the translational symmetry is broken. The same definition can be applied to photonic quasicrystals except in this case the symmetry is the 2pi/n rotational symmetry, where n is the rotational fold number. In this context, if no such defects are present, the structure is called "defect-free". Even though photonic quasicrystal patterns can be defect-free, localized modes can still exist in such structures. These modes resemble those of a central potential that suggests that localization in photonic quasicrystals are actually "extended" modes of the rotational symmetry. A possible connection is suggested between these localized modes and short-range dependence of the photonic band gap (PBG). Such a connection implies a tight-binding description of PBG formation of photonic quasicrystals - making them more similar to electronic semiconductors than regular photonic crystals.

Photonic band gap properties of 12-fold quasi-crystal determined through FDTD analysis.

The TM propagation properties of planar 12-fold photonic quasi-crystal patterns are theoretically examined using FDTD. The patterns examined can be produced using a dual beam multiple exposure technique. Simulated transmission plots are shown for various fill factors, dielectric contrast and propagation direction. It is shown that low index waveguides can be produced using the quasi-crystal photonic crystal pattern.