Device geometry dependent deterministic skyrmion generation from a skyrmionium.

A magnetic skyrmionium can be perceived as an association of two magnetic skyrmions with opposite topological charges. In this work, we have investigated the transformation of skyrmionium into multi-skyrmionic states via domain wall pairs in three different devices with variable geometric configurations. The same device geometries are considered for single ferromagnetic layer and synthetic antiferromagnetic system. It is observed that by tuning the current density, deterministic generation of skyrmions is possible via the spin transfer torque. The proposed device is efficiently adjustable to change the number of skyrmions also at room temperature. The results may lead to development of skyrmion-based devices for neuromorphic and unconventional computing.

Magnetic properties in soft (CoFeB)/hard (Co) bilayers deposited under different Ar gas pressure.

We have studied the effect of deposition pressure on the magnetization reversal, domains, anisotropy and Gilbert damping constant in the ferromagnetic (CoFeB and Co) single and bilayer samples. Hysteresis measured by magneto-optic Kerr microscopy for the single layer films prepared at higher deposition pressure indicate no change of loop shape i.e. isotropic behaviour. An enhancement of anisotropy has been observed in the bilayer samples than the single layer samples prepared at a particular deposition condition. However, increasing the deposition pressure to 50 sccm for the bilayer samples, anisotropy gets reduced. For single layer Co film deposited at 10 sccm exhibits branch and patch like domains for different angle between the easy axis and the external magnetic field. However, the Co film deposited at 50 sccm exhibits ripple like domains. In the case of single layer CoFeB, branch and patch like domains are observed deposited at 10 sccm. Patch like domains are found for the CoFeB films deposited at 50 sccm. Pinned labyrinth and ripple kind of magnetic domains along with the big branch domains are found in the bilayer samples. The pinned domains may be due to the interfacial exchange coupling. Similar values of damping constants have been observed for different thin films prepared at different deposition pressure.