3.3-4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning.

In order to implement the fifth generation (5G) communication system for a large number of users, the governments of many countries nominated the low 5G frequency band between 3.3 and 4.3 GHz. This paper proposes a wideband RFPA by designing the input matching network (MN) and output MN of the device using the simplified real frequency technique (SRFT) and the harmonic tuning network. The load-pull and source-pull is applied at multiple points for 100 MHz intervals over the bandwidth to obtain the optimum impedances at the output and input of the 10W Gallium Nitride (GaN) Cree CGH40010F device. To verify the design, the RFPA is simulated, and the performance is measured between 3.3 and 4.3 GHz. According to experimental findings, the measured drain efficiency (DE) throughout the whole bandwidth ranged from 57.5 to 67.5% at the output power of 40 dBm. Moreover, at the 1 dB compression point between 39.2 and 42.2 dBm output power, the drain efficiency (DE) achieves a high value of 81.2% with an output power of 42.2 dBm at a frequency of 3.3 GHz. The RFPA can obtain a maximum gain of 12.4 dB at 3.5 GHz. The linearity of the RFPA with a two-tone signal is measured and the value is less than -22 dBc all over the band.

Insertion Loss and Phase Compensation Using a Circular Slot Via-Hole in a Compact 5G Millimeter Wave (mmWave) Butler Matrix at 28 GHz.

Fifth generation (5G) technology aims to provide high peak data rates, increased bandwidth, and supports a 1 millisecond roundtrip latency at millimeter wave (mmWave). However, higher frequency bands in mmWave comes with challenges including poor propagation characteristics and lossy structure. The beamforming Butler matrix (BM) is an alternative design intended to overcome these limitations by controlling the phase and amplitude of the signal, which reduces the path loss and penetration losses. At the mmWave, the wavelength becomes smaller, and the BM planar structure is intricate and faces issues of insertion losses and size due to the complexity. To address these issues, a dual-layer substrate is connected through the via, and the hybrids are arranged side by side. The dual-layer structure circumvents the crossover elements, while the strip line, hybrids, and via-hole are carefully designed on each BM element. The internal design of BM features a compact size and low-profile structure, with dimensions of 23.26 mm × 28.92 mm (2.17 λ0 × 2.69 λ0), which is ideally suited for the 5G mmWave communication system. The designed BM measured results show return losses, Sii and Sjj, of less than -10 dB, transmission amplitude of -8 ± 2 dB, and an acceptable range of output phase at 28 GHz.