Nanoimprinted 2D-Chiral Perovskite Nanocrystal Metasurfaces for Circularly Polarized Photoluminescence.

The versatile hybrid perovskite nanocrystals (NCs) are one of the most promising materials for optoelectronics by virtue of their tunable bandgaps and high photoluminescence (PL) quantum yields. However, their inherent crystalline chemical structure limits the chiroptical properties achievable with the material. The production of chiral perovskites has become an active field of research for its promising applications in optics, chemistry, or biology. Typically, chiral halide perovskites are obtained by the incorporation of different chiral moieties in the material. Unfortunately, these chemically modified perovskites have demonstrated moderate values of chiral PL so far. Here, a general and scalable approach is introduced to produce chiral PL from arbitrary nanoemitters assembled into 2D-chiral metasurfaces. The fabrication via nanoimprinting lithography employs elastomeric molds engraved with chiral motifs covering millimeter areas that are used to pattern two types of unmodified colloidal perovskite NC inks: green-emissive CsPbBr3 and red-emissive CsPbBr1 I2 . The perovskite 2D-metasurfaces exhibit remarkable PL dissymmetry factors (glum ) of 0.16 that can be further improved up to glum of 0.3 by adding a high-refractive-index coating on the metasurfaces. This scalable approach to produce chiral photoluminescent thin films paves the way for the seamless production of bright chiral light sources for upcoming optoelectronic applications.

Nanostructured Back Reflectors for Efficient Colloidal Quantum-Dot Infrared Optoelectronics.

Colloidal quantum dots (CQDs) can be used to extend the response of solar cells, enabling the utilization of solar power that lies to the red of the bandgap of c-Si and perovskites. To achieve largely complete absorption of infrared (IR) photons in CQD solids requires thicknesses on the micrometer range; however, this exceeds the typical diffusion lengths (≈300 nm) of photoexcited charges in these materials. Nanostructured metal back electrodes that grant the cell efficient IR light trapping in thin active layers with no deterioration of the electrical properties are demonstrated. Specifically, a new hole-transport layer (HTL) is developed and directly nanostructured. Firstly, a material set to replace conventional rigid HTLs in CQD devices is developed with a moldable HTL that combines the mechanical and chemical requisites for nanoimprint lithography with the optoelectronic properties necessary to retain efficient charge extraction through an optically thick layer. The new HTL is nanostructured in a 2D lattice and conformally coated with MoO3 /Ag. The photonic structure in the back electrode provides a record photoelectric conversion efficiency of 86%, beyond the Si bandgap, and a 22% higher IR power conversion efficiency compared to the best previous reports.

Ultrathin Semiconductor Superabsorbers from the Visible to the Near-Infrared.

The design of ultrathin semiconducting materials that achieve broadband absorption is a long-sought-after goal of crucial importance for optoelectronic applications. To date, attempts to tackle this problem consisted either of the use of strong-but narrowband-or broader-but moderate-light-trapping mechanisms. Here, a strategy that achieves broadband optimal absorption in arbitrarily thin semiconductor materials for all energies above their bandgap is presented. This stems from the strong interplay between Brewster modes, sustained by judiciously nanostructured thin semiconductors on metal films, and photonic crystal modes. Broadband near-unity absorption in Ge ultrathin films is demonstrated, which extends from the visible to the Ge bandgap in the near-infrared and is robust against angle of incidence variation. The strategy follows an easy and scalable fabrication route enabled by soft nanoimprinting lithography, a technique that allows seamless integration in many optoelectronic fabrication procedures.