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Several organic-inorganic hybrid materials from the metal-organic framework (MOF) family have been shown to form stable liquids at high temperatures. Quenching then results in the formation of melt-quenched MOF glasses that retain the three-dimensional coordination bonding of the crystalline phase. These hybrid glasses have intriguing properties and could find practical applications, yet the melt-quench phenomenon has so far remained limited to a few MOF structures. Here we turn to hybrid organic-inorganic perovskites-which occupy a prominent position within materials chemistry owing to their functional properties such as ion transport, photoconductivity, ferroelectricity and multiferroicity-and show that a series of dicyanamide-based hybrid organic-inorganic perovskites undergo melting. Our combined experimental-computational approach demonstrates that, on quenching, they form glasses that largely retain their solid-state inorganic-organic connectivity. The resulting materials show very low thermal conductivities (~0.2 W m-1 K-1), moderate electrical conductivities (10-3-10-5 S m-1) and polymer-like thermomechanical properties.
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The identification of plastic type is important for environmental applications ranging from recycling to understanding the fate of plastics in marine, atmospheric, and terrestrial environments. Infrared reflectance spectroscopy is a powerful approach for plastics identification, requiring only optical access to a sample. The use of visible and near-infrared wavelengths for plastics identification are limiting as dark colored plastics absorb at these wavelengths, producing no reflectance spectra. The use of mid-infrared wavelengths instead enables dark plastics to be identified. Here we demonstrate the capability to utilize a pulsed, widely-tunable (5.59 - 7.41 µm) mid-infrared quantum cascade laser, as the source for reflectance spectroscopy, for the rapid and robust identification of plastics. Through the application of linear discriminant analysis to the resulting spectral data set, we demonstrate that we can correctly classify five plastic types: polyethylene terephthalate (PET), high density polyethylene (HDPE), low density polyethylene (LDPE), polypropylene (PP), and polystyrene (PS), with a 97% accuracy rate.
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Hydrostatic pressure represents an inexpensive and practical method of driving caloric effects in brittle magnetocaloric materials, which display first-order magnetostructural phase transitions whose large latent heats are traditionally accessed using applied magnetic fields. Here, moderate changes of hydrostatic pressure are used to drive giant and reversible inverse barocaloric effects near room temperature in the notoriously brittle magnetocaloric material MnCoGeB0.03 . The barocaloric effects compare favorably with those observed in barocaloric materials that are magnetic. The inevitable fragmentation provides a large surface for heat exchange with pressure-transmitting media, permitting good access to barocaloric effects in cooling devices.
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Current interest in barocaloric effects has been stimulated by the discovery that these pressure-driven thermal changes can be giant near ferroic phase transitions in materials that display magnetic or electrical order. Here we demonstrate giant inverse barocaloric effects in the solid electrolyte AgI, near its superionic phase transition at ~420 K. Over a wide range of temperatures, hydrostatic pressure changes of 2.5 kbar yield large and reversible barocaloric effects, resulting in large values of refrigerant capacity. Moreover, the peak values of isothermal entropy change (60 J K-1 kg-1 or 0.34 J K-1 cm-3) and adiabatic temperature changes (18 K), which we identify for a starting temperature of 390 K, exceed all values previously recorded for barocaloric materials. Our work should therefore inspire the study of barocaloric effects in a wide range of solid electrolytes, as well as the parallel development of cooling devices.
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Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (µFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.
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High-resolution magnetoelectric imaging is used to demonstrate electrical control of the perpendicular local magnetization associated with 125 nm-wide magnetic stripe domains in 100-nm-thick Ni films. This magnetoelectric coupling is achieved in zero magnetic field using strain from ferroelectric BaTiO3 substrates to control perpendicular anisotropy imposed by the growth stress. These findings may be exploited for perpendicular recording in nanopatterned hybrid media.
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Large reversible changes of thermal conductivity are induced by mechanical stress, and the corresponding device is a key element for phononics applications. We show that the thermal conductivity κ of ferroic twinned thin films can be reversibly controlled by strain. Nonequilibrium molecular dynamics simulations reveal that thermal conductivity decreases linearly with the number of twin boundaries perpendicular to the direction of heat flow. Our demonstration of large and reversible changes in thermal conductivity driven by strain may inspire the design of controllable thermal switches for thermal logic gates and all-solid-state cooling devices.
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Efficiency is defined as η = |Q|/|W| in order to investigate the electrical work |W| associated with electrocaloric heat |Q|. This materials parameter indicates that polymer films are slightly more energy efficient than ceramic films, and therefore both species of material remain candidates for future cooling applications.
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Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
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Potential gradients due to the spontaneous polarization of BiFeO(3) yield asymmetric and nonlinear photocarrier dynamics. Photocurrent direction is determined by local ferroelectric domain orientation, whereas magnitude is spectrally centered around charged domain walls that are associated with oxygen vacancy migration. Photodetection can be electrically controlled by manipulating ferroelectric domain configurations.
Assuntos
Bismuto/química , Eletricidade , Compostos Férricos/química , Condutividade ElétricaRESUMO
Artificial multiferroic tunnel junctions combining a ferroelectric tunnel barrier of BaTiO(3) with magnetic electrodes display a tunnel magnetoresistance whose intensity can be controlled by the ferroelectric polarization of the barrier. This effect, called tunnel electromagnetoresistance (TEMR), and the corollary magnetoelectric coupling mechanisms at the BaTiO(3)/Fe interface were recently reported through macroscopic techniques. Here, we use advanced spectromicroscopy techniques by means of aberration-corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) to probe locally the nanoscale structural and electronic modifications at the ferroelectric/ferromagnetic interface. Atomically resolved real-space spectroscopic techniques reveal the presence of a single FeO layer between BaTiO(3) and Fe. Based on this accurate description of the studied interface, we propose an atomistic model of the ferroelectric/ferromagnetic interface further validated by comparing experimental and simulated STEM images with atomic resolution. Density functional theory calculations allow us to interpret the electronic and magnetic properties of these interfaces and to understand better their key role in the physics of multiferroics nanostructures.
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Compostos de Bário/química , Ferro/química , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Semicondutores , Titânio/química , Condutividade Elétrica , Transporte de Elétrons , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Tamanho da Partícula , Propriedades de SuperfícieRESUMO
Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as â¼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.
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Campos Eletromagnéticos , Imãs/química , Nanoestruturas/química , Armazenamento e Recuperação da Informação , Microscopia de Força Atômica , Nanotecnologia/instrumentação , Nanotecnologia/métodos , Dispositivos de Armazenamento ÓpticoRESUMO
We have studied electrostatic field-induced doping in La0.8Ca0.2MnO3 transistors using electrolyte as a gate dielectric. For positive gate bias, electron doping drives a transition from a ferromagnetic metal to an insulating ground state. The thickness of the electrostatically doped layer depends on bias voltage but can extend to 5 nm requiring a field doping of 2x10;{15} charges per cm;{2} equivalent to 2.5 electrons per unit cell area. In contrast, negative gate voltages enhance the metallic conductivity by 30%.
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The Landau potential of the martensitic phase transformation in Ni(46.8)Ti(50)Fe(3.2) was determined using high resolution x-ray diffraction to measure the spontaneous strain and calorimetric measurements to determine the excess specific heat of the R phase. The spontaneous strain is proportional to the square of the order parameter which is tested by the relation of the excess entropy and the order parameter. The parameters of the Landau free energy were determined by fitting the temperature evolution of the order parameter and using the scaling between the excess entropy and the order parameter. The double well potential at absolute zero temperature was calculated and the interface energy and domain wall thickness were estimated.
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The magnetocaloric effect (MCE) in paramagnetic materials has been widely used for attaining very low temperatures by applying a magnetic field isothermally and removing it adiabatically. The effect can also be exploited for room-temperature refrigeration by using giant MCE materials. Here we report on an inverse situation in Ni-Mn-Sn alloys, whereby applying a magnetic field adiabatically, rather than removing it, causes the sample to cool. This has been known to occur in some intermetallic compounds, for which a moderate entropy increase can be induced when a field is applied, thus giving rise to an inverse magnetocaloric effect. However, the entropy change found for some ferromagnetic Ni-Mn-Sn alloys is just as large as that reported for giant MCE materials, but with opposite sign. The giant inverse MCE has its origin in a martensitic phase transformation that modifies the magnetic exchange interactions through the change in the lattice parameters.