RESUMO
Chemical functionalization of nanofillers is an effective strategy to benefit the formation of the conductive network in the matrix which can enhance the electrical conductivity of polymer nanocomposites (PNCs). In this work, we adopted a coarse-grained molecular dynamics simulation to investigate the effect of the nanorod (NR) functionalization on the conductive probability of PNCs under the quiescent state or under a shear field. It is found that the direct aggregation structure of NRs is gradually broken down with increasing the NR functionalization degree λ A, which improves their dispersion state. Moreover, a local bridging structure of NRs sandwiched via one polymer layer is formed at high λ A. Corresponding to it, the percolation threshold of PNCs first quickly decreases, then increases and last slightly decreases again with the increase of λ A, which exhibits an anti N-type under the quiescent state. Meanwhile, it shows a non-monotonic dependence on the interaction between polymer and the functionalized beads which reaches the lowest value at the moderate interaction. However, the percolation threshold is nearly independent of λ A under the shear field. Compared with in the quiescent state, the decrease or the increase of the percolation threshold can be tuned by λ A under the shear field. The significant change in the percolation threshold is attributed to the orientation and the dispersion state of NRs under the shear field, which affects the conductive network. Especially, we found that the dispersion state of NRs is different for different λ A under the shear field. However, the percolation threshold is similar which indicates that the dispersion state of NRs is not completely correlated to the conductive network. In summary, this work presents some further understanding of how the NR functionalization affects the electrical conductivity of PNCs.
RESUMO
Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb2O3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3. The electroluminescence mechanisms of the Tb2O3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu3+, Sm3+ and Yb3+) doped Tb2O3 light-emitting devices.
RESUMO
Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f-5d transitions of the Ce(3+) ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed.
RESUMO
ITO/Y2O3/Ag devices were fabricated using Y2O3 films as insulator. Four intense and sharp lines with half-peak width of 4 nm were observed for the 293.78 nm InI, 316.10 nm InI, 444.82 nm InII and 403.07 nm InIII transitions. Luminescence mechanism was illustrated by cross-section of the devices based on the analysis of surface morphology. Under the action of strong electric field, the loss of K-shell electrons led to the occurrence of characteristic radiation of indium ions. In addition, the device with turn-on voltage of 10V demonstrates typical I-V diode characteristics. Moreover, Y2O3/In2O3 multiple films as the insulation layer instead of single Y2O3 films was found to improve the device performance with excellent CIE (x, y) coordinates (0.16, 0.03).