Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors.

In this research, we report the rapid and reliable formation of high-performance nanoscale bilayer oxide dielectrics on silicon substrates via low-temperature deep ultraviolet (DUV) photoactivation. The optical analysis of sol-gel aluminum oxide films prepared at various concentrations reveals the processable film thickness with DUV photoactivation and its possible generalization to the formation of various metal oxide films on silicon substrates. The physicochemical and electrical characterizations confirm that DUV photoactivation accelerates the efficient formation of a highly dense aluminum oxide and aluminum silicate bilayer (17 nm) on heavily doped silicon at 150 °C within 5 min owing to the efficient thermal conduction on silicon, resulting in excellent dielectric properties in terms of low leakage current (∼10-8 A/cm2 at 1.0 MV/cm) and high areal capacitance (∼0.4 µF/cm2 at 100 kHz) with narrow statistical distributions. Additionally, the sol-gel bilayer oxide dielectrics are successfully combined with a sol-gel indium-gallium-zinc oxide semiconductor via two successive DUV photoactivation cycles, leading to the efficient fabrication of solution-processed oxide thin-film transistors on silicon substrates with an operational voltage below 0.5 V. We expect that in combination with large-area printing, the bilayer oxide dielectrics are beneficial for large-area solution-based oxide electronics on silicon substrates, while DUV photoactivation can be applied to various types of solution-processed functional metal oxides such as phase-transition memories, ferroelectrics, photocatalysts, charge-transporting interlayers and passivation layers, etc. on silicon substrates.

Improved Battery Performance of Nanocrystalline Si Anodes Utilized by Radio Frequency (RF) Sputtered Multifunctional Amorphous Si Coating Layers.

Despite the high theoretical specific capacity of Si, commercial Li-ion batteries (LIBs) based on Si are still not feasible because of unsatisfactory cycling stability. Herein, amorphous Si (a-Si)-coated nanocrystalline Si (nc-Si) formed by versatile radio frequency (RF) sputtering systems is proposed as a promising anode material for LIBs. Compared to uncoated nc-Si (retention of 0.6% and Coulombic efficiency (CE) of 79.7%), the a-Si-coated nc-Si (nc-Si@a-Si) anodes show greatly improved cycling retention (C50th/Cfirst) of ∼50% and a first CE of 86.6%. From the ex situ investigation with electrochemical impedance spectroscopy (EIS) and cracked morphology during cycling, the a-Si layer was found to be highly effective at protecting the surface of the nc-Si from the formation of solid-state electrolyte interphases (SEI) and to dissipate the mechanical stress upon de/lithiation due to the high fracture toughness.

Controlled Molybdenum Disulfide Assembly inside Carbon Nanofiber by Boudouard Reaction Inspired Selective Carbon Oxidation.

Vertical stacking and lateral growth of molybdenum disulfide (MoS2 ) are controlled with remarkable precision, and MoS2 nanotubes are directly converted from nanofibers. Predictive synthesis is enabled by identifying the specific thermodynamic region where the Boudouard reaction becomes favored. It reveals how the chemical potential of each species in the MoSCO system can predict phase behaviors.

New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current.

The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm(2)), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current.

Enhancement of electrical conductivity of silver nanowires-networked films via the addition of Cs-added TiO2.

This study proposes a novel method of improving the electrical conductivity of silver nanowires (NWs)-networked films for the application of transparent conductive electrodes. We applied Cs-added TiO2 (TiO2:Cs) nanoparticles onto Ag NWs, which caused the NWs to be neatly welded together through local melting at the junctions, according to our transmission and scanning electron microscopy analyses. Systematic comparison of the sheet resistance of the samples reveals that these welded NWs yielded a significant improvement in conductivity. OLED devices, fabricated by using the NW film planarized via embedding the wires into PMMA, demonstrated device performance was comparable with the reference sample with indium tin oxide electrode.

Effects of Sb Content (x) on (Bi(1-x)Sb(x))2Te3 Thermoelectric Thin Film Deposited by Effusion Cell Evaporator.

This paper investigates the effects of the Sb content (x) on (Bi(1-x)Sb(x))2Te3 thermoelectric films with x changing widely from 0 (Sb2Te3) to 1 (Bi2Te3). First, the XRD analysis discloses that with the Sb content (x) increasing, the phase changed gradually from Bi2Te3 to Sb2Te3 as Sb atoms replaced substitutionally Bi atoms. Further microstructure analysis reveals that an extensive grain growth occurred during post-annealing for the samples with high Sb contents. According to the measurement of electrical and thermoelectric properties, the polarity of the charge carrier and Seebeck coefficient switched n-type to p-type in the range of x = 0.45~0.63. For the n-type samples, the power factor is highest when x = 0.18 around 46.01 µW/K(2) whereas Sb2Te3, for the p-type samples, shows the highest value, 62.48 µW/K(2)cm.

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

Silicide formation process of Er films with Ta and TaN capping layers.

The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires.

This study examines the effects of doping ZnO nanowires (NWs) with Sn on the growth morphology and electrical properties. ZnO NWs with various Sn contents (1-3 at.%) were synthesized using the vapor-liquid-solid method. Scanning electron and transmission electron microscopy analyses showed that all of the Sn-doped NWs grew in a bamboo-like morphology, in which stacking faults enriched with Sn were periodically inserted. We fabricated a hybrid film of InZnO sol-gel and Sn-doped ZnO NW networks to characterize the effects of Sn doping on the electrical properties of the NWs. With increasing doping density, the carrier concentration increases significantly while the mobility decreases greatly. The resistivity remains scattered, which suggests that Sn doping in ZnO is not an effective method for the enhancement of conductivity, since Sn does not readily incorporate into the ZnO structure.