Tunability of the bandgap of SnS by variation of the cell volume by alloying with A.E. elements.

We clarified that the bandgap of inorganic materials is strongly correlated with their effective coordination number (ECoN) via first-principles calculations and experimental confirmations. Tin mono-sulphide (Pnma) and germanium mono-sulphide (Pnma) were selected as model cases since these materials successively alter the ECoN as the cell volume changes and show an uncommon relationship between cell volume and bandgap. Contrary to the common semiconductors, the bandgaps of SnS (Pnma) and GeS (Pnma) have a positive relationship with respect to cell volume. This unique phenomenon was explained by incorporating the concept of ECoN into the theoretical studies. The theory proposed in this study is widely applicable to semiconductors with low-symmetry structures. Further, we experimentally demonstrated that the bandgap of SnS (Pnma) can be broadly tuned by changing the unit cell volume via alloying with alkali-earth (A.E.) metals, which could allow SnS to be applied to Si-based tandem photovoltaics. Alloying with A.E. elements also stabilised Cl as an n-type donor, which enabled n-type conduction in the bandgap-widened SnS film in the SnS-based semiconductors.

Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions.

In this study, we investigated band alignments at CdS/epitaxial CuInxGa1-xSe2 (epi-CIGSe) and epi-CIGSe/GaAs heterointerfaces for solar cell applications using ultraviolet, inverse, and X-ray photoemission spectroscopy (UPS, IPES, and XPS) techniques. We clarified the impacts of KF postdeposition treatment (KF-PDT) at the CdS/epi-CIGSe front heterointerfaces. We found that KF-PDT changed the conduction band alignment at the CdS/epi-CIGSe heterointerface from a cliff to flat configuration, attributed to an increase in the electron affinity (EA) and ionization potential (IP) of the epi-CIGSe surface because of a decrease in Cu and Ga contents. Herein, we discuss the correlation between the impacts of KF-PDT and the solar cell performance. Furthermore, we also investigated the band alignment at the epi-CIGSe/GaAs rear heterointerface. Electron barriers were formed at the epi-CIGSe/GaAs interface, suppressing carrier recombination as the back surface field. Contrarily, a hole accumulation layer is formed by the valence band bending, which is like Ohmic contact.

Improving the Open Circuit Voltage through Surface Oxygen Plasma Treatment and 11.7% Efficient Cu2ZnSnSe4 Solar Cell.

The photovoltaic performance of Cu2ZnSnSe4 (CZTSe) solar cells subjected to surface oxygen plasma treatments is investigated. The observed improvements are related to an enhancement of the open circuit voltage VOC, that is, the suppression of the VOC deficit. The VOC monotonically increases with treatment time up to 0.460 V. The origin of this improvement is discussed, and it is concluded that the effectiveness of the surface treatment is not due to oxygen-related alloying but instead to the homogeneous oxidation and removal of the oxidized CZTSe surface layer. The surface oxygen content increases with surface treatment time, although surface oxides are fully removed after ammonia treatment, which is conducted in a similar manner to CdS buffer deposition. The reduction of surface recombination is confirmed by time-resolved photoluminescence measurements, and the minority carrier lifetime deduced using the fast decay component increases with increasing treatment time. The relationship between photovoltaic properties and lifetime is clearly demonstrated. The best-performing CZTSe solar cell obtained using surface oxygen treatment demonstrates a conversion efficiency of 11.7%, which is higher than those of previous reports on CZTSe cells.

Band Alignment of the CdS/Cu2Zn(Sn1- xGe x)Se4 Heterointerface and Electronic Properties at the Cu2Zn(Sn1- xGe x)Se4 Surface: x = 0, 0.2, and 0.4.

The surface electronic properties of the light absorber and band alignment at the p/n heterointerface are key issues for high-performance heterojunction solar cells. We investigated the band alignment of the heterointerface between cadmium sulfide (CdS) and Ge-incorporated Cu2ZnSnSe4 (CZTGSe), with Ge/(Ge + Sn) ratios ( x) between 0 and 0.4, by X-ray photoelectron, ultraviolet, and inversed photoemission spectroscopies (XPS, UPS, and IPES, respectively). In particular, we used interface-induced band bending in order to determine the conduction band offset (CBO) and valence-band offset (VBO), which were calculated from the core-level shifts of each element in both the CdS overlayer and the CZTGSe bottom layer. Moreover, the surface electronic properties of CZTGSe were also investigated by laser-irradiated XPS. The CBO at the CdS/CZTGSe heterointerface decreased linearly, from +0.36 to +0.20 eV, as x was increased from 0 to 0.4; in contrast, the VBO at the CdS/CZTGSe heterointerface was independent of Ge content. Both UPS and IPES revealed that the Fermi level at the CZTGSe surface is located near the center of the band gap. The hole concentration at the CZTGSe surface was on the order of 1011 cm-3, which is much smaller than that of the bulk (∼1016 cm-3). We discuss the differences in hole deficiencies near the surface and in the bulk on the basis of laser-irradiated XPS and conclude that hole deficiencies are due to defects distributed near the surface with densities that are lower than in the bulk, and the Fermi level is not pinned at the CZTGSe surface.