Influence of germinated brown rice-based flour modified by MAse on type 2 diabetic mice and HepG2 cell cytotoxic capacity.

This study aimed to discover whether using maltogenic amylase (MAse) to modify starch in germinated brown rice flour may enhance slow digestion starch and release more bioactive compounds (BCs) content. To achieve this aim, the starch was modified with four levels of MAse (0 U, 133 U, 266 U and 399 U MAse/g flour) for 1 hr at pH 5 and then spray-dried to make modified flour. The biochemical impacts of the products were then accessed in normal and type 2 diabetic mice for 4 weeks. The result showed that when the starch was modified by MAse 266 U/g, a significant reduction of rapidly digested starch to 22.35% from 61.56%, an increase in slowly digested starch to 33.09% while resistant starch as 2.92% corresponding to the increase of γ-amino butyric acid to 528.1 ± 44.1 mg/L and 120.6 ± 10.9 mg/L of ferulic acid. The extract from modified flour showed very strong cytotoxic activity against HepG2 cell (>80% inhibition). The result in vivo showed that the type-2 diabetic mice fed with this modified product could better improve the stability of the glycemic index. Also, atherosclerotic plaque assessment further supports these findings. The results indicated that BCs released considerably couple with the changes in starch properties caused by MAse enhanced the effectiveness of this product to diabetes as well as positive effect on cytotoxic activity against HepG2 cell.

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.

Basal plane dislocations (BPDs) in 4H silicon carbide (SiC) crystals grown using the physical vapor transport (PVT) method are diminishing the performance of SiC-based power electronic devices such as pn-junction diodes or MOSFETs. Therefore, understanding the generation and movement of BPDs is crucial to grow SiC suitable for device manufacturing. In this paper, the impact of the cooldown step in PVT-growth on the defect distribution is investigated utilizing two similar SiC seeds and identical growth parameters except for a cooldown duration of 40 h and 70 h, respectively. The two resulting crystals were cut into wafers, which were characterized by birefringence imaging and KOH etching. The initial defect distribution of the seed wafer was characterized by synchrotron white beam X-ray topography (SWXRT) mapping. It was found that the BPD density increases with a prolonged cooldown time. Furthermore, small angle grain boundaries based on threading edge dislocation (TED) arrays, which are normally only inherited by the seed, were also generated in the case of the crystal cooled down in 70 h. The role of temperature gradients inside the crystal during growth and post-growth concerning the generation of shear stress is discussed and supported by numerical calculations.