Special trends in CBF and DREB2 groups in Eucalyptus gunnii vs Eucalyptus grandis suggest that CBF are master players in the trade-off between growth and stress resistance.

Annotation of the Eucalyptus grandis genome showed a large amplification of the dehydration-responsive element binding 1/C-repeat binding factor (DREB1/CBF) group without recent DREB2 gene duplication compared with other plant species. The present annotation of the CBF and DREB2 genes from a draft of the Eucalyptus gunnii genome sequence reveals at least one additional CBF copy in the E. gunnii genome compared with E. grandis, suggesting that this group is still evolving, unlike the DREB2 group. This study aims to investigate the redundancy/neo- or sub-functionalization of the duplicates and the relative involvement of the two groups in abiotic stress responses in both E. grandis and E. gunnii (lower growth but higher cold resistance). A comprehensive transcriptional analysis using high-throughput quantitative real-time polymerase chain reaction (qRT-PCR) was performed on leaves, stems and roots from the two Eucalyptus species after cold, heat or drought treatment. A large CBF cluster accounted for most of the cold response in all the organs, whereas heat and drought responses mainly involved a small CBF cluster and the DREB2 genes. In addition, CBF putative target genes, known to be involved in plant tolerance and development, were found to be cold-regulated. The higher transcript amounts of both the CBF and target genes in the cold tolerant E. gunnii contrasted with the higher CBF induction rates in the fast growing E. grandis. Altogether, the present results, in agreement with previous data about Eucalyptus transgenic lines over-expressing CBF, suggest that these factors, which promote both stress protection and growth limitation, participate in the trade-off between growth and resistance in this woody species.

Slow-light Mach-Zehnder modulators based on Si photonic crystals.

Mach-Zehnder optical modulators are the key devices for high-speed electrical-to-optical conversion in Si photonics. Si rib waveguides with a p-n diode structure operated in the carrier depletion mode have mainly been developed as their phase shifters. Their length is usually longer than millimeters due to the limited change in the refractive index due to the carrier depletion in a Si p-n diode. This length is shorter than commercial LiNbO3 modulators, but still much shorter devices are desired for large-scale integration and for simplifying the high-speed RF modulation. A promising solution is to use slow light in photonic crystal waveguides, which enhances the modulation efficiency in proportion to the group-velocity refractive index ng. In particular, dispersion-engineered slow light allows more than five-fold enhancement, maintaining a wide working spectrum as well as large temperature tolerance. The devices with a phase shifter length of around 100 µm are fabricated by a standard process compatible with complementary metal-oxide semiconductors. The operation at 10 Gbps and higher speeds are obtained in the wavelength range of 16.9 nm and temperature range of 105 K.

High-speed delay tuning of slow light in pin-diode-incorporated photonic crystal waveguide.

We demonstrate the high-speed electrical delay tuning of slow light pulses using Si photonic crystal waveguides. The device has an i-region-chirped pin diode, within which thermo-optic and carrier plasma effects are generated by forward bias. The former changes the delay up to 62 ps for the DC bias. The latter changes the delay for 1 Gbps pseudo random bit sequence tuning signals, which will be applicable to advanced time-domain optical signal processing.

Compact and fast photonic crystal silicon optical modulators.

We demonstrate the first sub-100 µm silicon Mach-Zehnder modulators (MZMs) that operate at >10 Gb/s, by exploiting low-dispersion slow-light in lattice-shifted photonic crystal waveguides (LSPCWs). We use two LSPCW-MZM structures, one with LSPCWs in both arms of the MZM, and the other with an LSPCW in only one of the arms. Using the first structure we demonstrate 10 Gb/s operation with a operating bandwidth of 12.5 nm, in a device with a phase-shifter length of only 50 µm. Using the second structure, owing to a larger group index as well as lower spectral noise, we demonstrate 40 Gb/s operation with a phase-shifter length of only 90 µm, which is more than an order-of-magnitude shorter than most 40 Gb/s MZMs.

Slow-light-based variable symbol-rate silicon photonics DQPSK receiver.

We report a silicon DQPSK receiver whose symbol rate can be varied by a tunable one-bit delay line including an all-pass micro-ring slow-light device. It also consists of Si-wire waveguides with spot-size converters, optimized splitters/couplers, heater-controlled Mach-Zehnder attenuators and phase shifters, 90° hybrid with a low-loss crossing and balanced Ge photodiodes, all of which are fabricated by using CMOS-compatible process. Demodulation was confirmed at symbol-rates of 7.4 - 9.0 Gbaud, corresponding to bit-rates of 14.8 - 18.0 Gb/s.

10 Gb/s operation of photonic crystal silicon optical modulators.

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 µm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

Ultrafast all-optical chalcogenide glass photonic circuits.

Focus Serial: Frontiers of Nonlinear Optics

Transverse characterization of high air-fill fraction tapered photonic crystal fiber.

We demonstrate tapering of a high air-fill fraction photonic crystal fiber by using the flame-brushing technique. Transverse probing along the taper allows us to ascertain how the microstructure is preserved during tapering. Experimental results are compared with numerical simulations performed with the finite-difference time-domain and plane-wave expansion methods. Through this investigation we find that the fiber geometry is well preserved throughout the tapering process and we resolve the apparent discrepancies between simulation and experiment that arise through the finite extent of the fiber microstructure.

Leakage of the fundamental mode in photonic crystal fiber tapers.

We report detailed measurements of the optical properties of tapered photonic crystal fibers (PCFs). We observe a striking long-wavelength loss as the fiber diameter is reduced, despite the minimal airhole collapse along the taper. We associate this loss with a transition of the fundamental core mode as the fiber dimensions contract: At wavelengths shorter than this transition wavelength, the core mode is strongly confined in the fiber microstructure, whereas at longer wavelengths the mode expands beyond the microstructure and couples out to higher-order modes. These experimental results are discussed in the context of the so-called fundamental mode cutoff described by Kuhlmey et al. [Opt. Express 10, 1285 (2002)], which apply to PCFs with a finite microstructure.