Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction.

The pursuit of increased efficiency of photoelectric energy conversion through optimized semiconductor structures remains highly competitive, with current results yet to align with broad expectations. In this study, we discover a significant enhancement in photocurrent performance of a p-3C-SiC nanothin film on p-Si/n-Si double junction (DJ) heterostructure that integrates p-3C-SiC/p-Si heterojunction and p-Si/n-Si homojunction. The vertical photocurrent (VPC) and vertical photoresponsivity exhibit a substantial enhancement in the DJ heterostructure, surpassing by a maximum of 43-fold compared to the p-3C-SiC/n-Si single junction (SJ) counterpart. The p-3C-SiC layer and n-Si substrate of the two heterostructures have similar material and geometrical properties. More importantly, the fabrication costs for the DJ and SJ heterostructure devices are comparable. Our results demonstrate a significant potential for using DJ devices in energy harvesters, micro/nano electromechanical systems, and sensing applications. This research may also lead to the creation of advanced optoelectronic devices using DJ structures, where employing various semiconductor materials to achieve exceptional performance through the application of the concept and theoretical model described in this work.

Charge-Reduced Particles via Self-Propelled Electrohydrodynamic Atomization for Drug Delivery Applications.

Electrohydrodynamic atomization (EHDA) provides unparalleled control over the size and production rate of particles from solution. However, conventional methods produce highly charged particles that are not appropriate for inhalation drug delivery. We present a self-propelled EHDA system to address this challenge, a promising one-step platform for generating and delivering charge-reduced particles. Our approach uses a sharp electrode to produce ion wind, which reduces the cumulative charge in the particles and transports them to a target in front of the nozzle. We effectively controlled the morphologies of polymer products created from poly(vinylidene fluoride) (PVDF) at various concentrations. Our technique has also been proven safe for bioapplications, as evidenced by the delivery of PVDF particles onto breast cancer cells. The combination of simultaneous particle production and charge reduction, along with its direct delivery capability, makes the self-propelled EHDA a versatile technique for drug delivery applications.

Vertical Piezo-Optoelectronic Coupling in a 3C-SiC/Si Heterostructure for Self-Powered and Highly Sensitive Mechanical Sensing.

This paper presents a novel self-powered mechanical sensing based on the vertical piezo-optoelectronic coupling in a 3C-SiC/Si heterojunction. The vertical piezo-optoelectronic coupling refers to the change of photogenerated voltage across the 3C-SiC/Si heterojunction upon application of mechanical stress or strain. The effect is elucidated under different photoexcitation conditions and under varying tensile and compressive strains. Experimental results show that the relationship between the vertical photovoltage and applied strain is highly linear, increasing under the tensile strain while decreasing under the compressive strain. The highest sensitivities to tensile and compressive strains are 0.146 and 0.058 µV/ppm/µW, respectively, which are about 220 and 360 times larger than those of the lateral piezo-optoelectronic coupling reported in literatures. These extremely large changes in vertical photovoltages are explained by the alteration in effective mass, energy band shift, and repopulation of photogenerated holes in out-of-plane, in-plane longitudinal, and in-plane transverse directions when strains are exerted on the heterojunction. The significant enhancement of strain sensitivity will pave the way for development of ultrasensitive and self-powered mechanical sensors based on the proposed vertical piezo-optoelectronic coupling.

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration.

It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 µW illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.