[XBP1 modulates hypoxia/reoxygenation injury in mouse renal tubular epithelial cells through TXNIP-NLRP3 signaling pathway].

Objective: To investigate the role and regulation mechanism of X box binding protein 1 (XBP1) for hypoxia/reoxygenation(H/R) injury in mouse renal tubular epithelial cells (TCMK-1) through thioredoxin interacting protein (TXNIP)-nucleotide-binding domain (NOD)-like receptor protein (TXNIP-NLRP3) signaling pathway. Methods: The cells were divided into 4 groups: si-NC group transfected with negative control siRNA (si-NC), si-XBP1 group transfected with siRNA targeting XBP1 (si-XBP1), si-NC+H/R group transfected with si-NC and exposed to H/R, and si-XBP1+H/R group transfected with si-XBP1 and exposed to H/R. The Annexin Ⅴ/PI double-staining method was used to detect cell apoptosis; The mitochondrial membrane potential (MMP) was determined by using JC-1 dye; The mitochondrial reactive oxygen species (mROS) was assessed by using MitoSOX™ dye. The interference efficiency of XBP1 was tested by Western blotting and quantitative real-time polymerase chain reaction. The expression levels of TXNIP, NLRP3 and IL-1ß protein were detected by Western blotting. The colocalization of mitochondria and TXNIP was detected by double-labeling immunofluorescent staining. The intergroup difference was compared by using an independent samples t-test. Results: Compared with the si-NC group, more mROS, apoptosis and lower MMP were observed in si-NC+H/R group. Compared with the si-NC+H/R group, less apoptosis (12.08±0.51 vs 19.01±1.80, P<0.05), mROS (34.63±0.64 vs 48.17±1.84, P<0.01) and higher MMP (1.03±0.11 vs 0.45±0.08, P<0.05) were observed in si-XBP1+H/R group. Down-regulation of XBP1U (protein: 1.31±0.18 vs 0.23±0.02, P<0.01; mRNA: 1.12±0.07 vs 0.38±0.01, P<0.001) and XBP1S (protein: 1.13±0.17 vs 0.28±0.07, P<0.01; mRNA: 8.39±0.63 vs 2.45±0.22, P<0.001) inhibited expression of TXNIP (0.15±0.02 vs 0.04±0.01, P<0.01), NLRP3 (1.13±0.12 vs 0.51±0.12, P<0.05) and IL-1ß (1.02±0.04 vs 0.19±0.06, P<0.001) during H/R. Meanwhile, TXNIP exhibited significantly much less colocalization with mitochondria in the si-XBP1+H/R group. Conclusion: Supression of XBP1 expression can effectively alleviate H/R-induced TCMK-1 cells injury, whose mechanism may be inhibition of TXNIP-induced NLRP3 inflammasome activation.

Single-photon property characterization of 1.3 µm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 µm emissions of InAs/GaAs QDs to 0.9 µm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 µm single-photon source based on semiconductor materials.

Field-field and photon-photon correlations of light scattered by two remote two-level InAs quantum dots on the same substrate.

We report the measurement of field-field and photon-photon correlations of light scattered by two InAs quantum dots separated by ≈40 µm. Near 4 K a large fraction of photons can be scattered coherently by each quantum dot leading to one-photon interference at a beam splitter (visibility ≈20%). Simultaneously, two-photon interference is also observed (visibility ≈40%) due to the indistinguishability of photons scattered by the two different quantum emitters. We show how spectral diffusion accounts for the reduction in interference visibility through variations in photon flux.

Desorption and ripening of low density InAs quantum dots.

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single QD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 microm as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.