Effect of Soft X-ray Irradiation on Film Properties of a Hydrogenated Si-Containing DLC Film.

The effect of soft X-ray irradiation on hydrogenated silicon-containing diamond-like carbon (Si-DLC) films intended for outer space applications was investigated by using synchrotron radiation (SR). We found that the reduction in film thickness was about 60 nm after 1600 mA·h SR exposure, whereas there was little change in their elemental composition. The reduction in volume was attributable to photoetching caused by SR, unlike the desorption of hydrogen in the case of exposure of hydrogenated DLC (H-DLC) film to soft X-rays. The ratio of the sp2 hybridization carbon and sp3 hybridization carbon in the hydrogenated Si-DLC films, sp2/(sp2 + sp3) ratio, increased rapidly from ~0.2 to ~0.5 for SR doses of less than 20 mA·h. SR exposure significantly changed the local structure of carbon atoms near the surface of the hydrogenated Si-DLC film. The rate of volume reduction in the irradiated hydrogenated Si-DLC film was 80 times less than that of the H-DLC film. Doping DLC film with Si thus suppresses the volume reduction caused by exposure to soft X-rays.

Control of Molecular Orientation of Spiro-OMeTAD on Substrates.

2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (spiro-OMeTAD) is utilized as a p-type semiconductor layer in perovskite solar cells and solid-state dye-sensitized solar cells. Spiro-OMeTAD has been known to have a spiro center, leading to a random orientation. Although the molecular orientation of organic semiconductor materials influences the conductivity, which is directly related to semiconductor device characteristics, the molecular orientation of spiro-OMeTAD has not been fully discussed. In this study, we prepared spiro-OMeTAD layers on various substrates and investigated their orientation by grazing-incidence wide-angle X-ray scattering (GIWAXS) and near-edge X-ray absorption fine structure (NEXAFS). Additionally, we demonstrated that the molecular orientation of spiro-OMeTAD could be controlled by changing their surface energies by changing the substrate materials. Consequently, we could improve the electrical conductivity by improving its molecular orientation. The results of this study provide a guideline for the preparation of organic semiconductor material layers using the wet-coating method.

Water Electrolysis Using Thin Pt and RuO x Catalysts Deposited by a Flame-Annealing Method on Pencil-Lead Graphite-Rod Electrodes.

An inexpensive, simple, and high-activity catalyst preparation method has been introduced in this work. Pt and RuO x catalysts were fabricated by soaking inexpensive graphite electrodes (pencil-lead graphite rod: PGR) in catalyst precursor solutions and using a simple flame-annealing method, which results in lower amount of Pt and RuO x catalyst layers. From X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure analysis, it has been found that platinum and ruthenium were deposited as zero-valence metal (Pt) and oxide (RuO x ), respectively. Catalytic activities of Pt/PGR and RuO x /PGR for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) were evaluated using neutral 1 M Na2SO4 aqueous electrolyte, respectively. Although HER and OER currents using PGR without catalysts were -16 mA cm-2 (at -1.5 V vs Ag/AgCl) and +20 mA cm-2 (at +2.0 V vs Ag/AgCl), they were improved to -110 and +80 mA cm-2 with catalysts (Pt and RuO x ), respectively. Such an inexpensive and rapid catalyst electrode preparation method on PGR using flame-annealing is a very significant method in the initial catalyst activity evaluation requiring a large amount of trial and error.

Wavefront measurement interferometry at the operational wavelength of extreme-ultraviolet lithography.

Two basic types of interferometer, a point diffraction interferometer (PDI) and a lateral shearing interferometer (LSI) suitable for operation in the extreme-ultraviolet (EUV) wavelength region, are described. To address the challenges of wavefront measurement with an accuracy of 0.1 nm rms, we present a calibration method for the PDI that places a mask with two large windows at the image plane of the illumination point light source and a general approach to deriving the phase-shift algorithm series that eliminates the undesired zeroth-order effect in the LSI. These approaches to improving the measurement accuracy were experimentally verified by the wavefront measurements of a Schwarzschild-type EUV projection lens.