Scaling advantage over path-integral Monte Carlo in quantum simulation of geometrically frustrated magnets.

The promise of quantum computing lies in harnessing programmable quantum devices for practical applications such as efficient simulation of quantum materials and condensed matter systems. One important task is the simulation of geometrically frustrated magnets in which topological phenomena can emerge from competition between quantum and thermal fluctuations. Here we report on experimental observations of equilibration in such simulations, measured on up to 1440 qubits with microsecond resolution. By initializing the system in a state with topological obstruction, we observe quantum annealing (QA) equilibration timescales in excess of one microsecond. Measurements indicate a dynamical advantage in the quantum simulation compared with spatially local update dynamics of path-integral Monte Carlo (PIMC). The advantage increases with both system size and inverse temperature, exceeding a million-fold speedup over an efficient CPU implementation. PIMC is a leading classical method for such simulations, and a scaling advantage of this type was recently shown to be impossible in certain restricted settings. This is therefore an important piece of experimental evidence that PIMC does not simulate QA dynamics even for sign-problem-free Hamiltonians, and that near-term quantum devices can be used to accelerate computational tasks of practical relevance.

Self-interference of split HOLZ line (SIS-HOLZ) for z-dependent atomic displacement measurement: Theoretical discussion.

A characteristic of the majority of semiconductors is the presence of lattice strain varying with the nanometer scale. Strain originates from the lattice mismatch between layers of different composition deposited during epitaxial growth. Strain can increase the mobility of the charge carriers by the band gap reduction. So, measuring atomic displacement inside crystals is an important field of interest in semiconductor industry. Among all available transmission electron microscopy techniques offering nano-scale resolution measurements, convergent beam electron diffraction (CBED) patterns show the highest sensitivity to the atomic displacement. Higher Order Laue Zone (HOLZ) lines split by small non-uniform variations of lattice constant allowing to measure the atomic displacement through the crystal. However, it could only reveal the atomic displacement in two dimensions, i.e., within the x-y plane of the thin film of TEM specimen. The z-axis atomic displacement which is along the path of the electron beam has been missing. This information can be obtained by recovering the phase information across the split HOLZ line using the self-interference of the split HOLZ line (SIS-HOLZ). In this work, we report the analytical approach used to attain the phase profile across the split HOLZ line. The phase profile is studied for three different atomic displacement fields in the Si substrate at 80nm away from its interface with Si/Si0.8Ge0.2 superlattices.

Determination of three-dimensional strain state in crystals using self-interfered split HOLZ lines.

An experimental method to measure the strain through the thickness of a crystal is demonstrated. This enables the full three-dimensional stress-strain state of a crystal at the nanoscale to be determined taking the current practice from two-dimensional strain state determination. Knowing the 3D strain state is desired by crystal growers in order to improve their crystal's quality. This method involves combining electron diffraction with electron interferometry in a transmission electron microscope. The electron diffraction uses a split higher order Laue zone (HOLZ) line and the electron interferometry uses an electron biprism.