Effects of a visual search task in a virtual reality space with a moving background on spatial cognition and standing balance in patients with left hemiparetic stroke.

We examined effects of a visual search task (VST) in virtual reality (VR) with a moving background on spatial cognition and standing balance in left hemiparetic strokes. The VST with background deviation was allocated to Case A. In Case B, the VST without the deviation was performed. As a results, in Case A, the reaction time of VST was shortened in the paretic space and ability of weight-shift to the paretic side was improved. In conclusion, the VST in the VR with a spatial manipulation may improve spatial cognition and standing balance in left hemiparetic strokes.

Benzothiadiazole versus Thiazolobenzotriazole: A Structural Study of Electron Acceptors in Solution-Processable Organic Semiconductors.

Despite the rapid progress of organic electronics, developing high-performance n-type organic semiconductors is still challenging. Donor-acceptor (D-A) type conjugated structures have been an effective molecular design strategy to achieve chemically-stable semiconductors and the appropriate choice of the acceptor units determines the electronic properties and device performances. We have now synthesized two types of A1 -D-A2 -D-A1 type conjugated molecules, namely, NDI-BTT-NDI and NDI-TBZT-NDI, with different central acceptor units. In order to investigate the effects of the central acceptor units on the charge-transporting properties, organic field-effect transistors (OFETs) were fabricated. NDI-TBZT-NDI had shallower HOMO and deeper LUMO levels than NDI-BTT-NDI. Hence, the facilitated charge injection resulted in ambipolar transistor performances with the optimized hole and electron mobilities of 0.00134 and 0.151 cm2 V-1 s-1 , respectively. In contrast, NDI-BTT-NDI displayed only an n-channel OFET performance with the electron mobility of 0.0288 cm2 V-1 s-1 . In addition, the device based on NDI-TBZT-NDI showed a superior air stability to that based on NDI-BTT-NDI. The difference in these OFET performances was reasonably explained by the contact resistance and film morphology. Overall, this study demonstrated that the TBZ acceptor is a promising building block to create n-type organic semiconductors.