KMg4Bi3: A Narrow Band Gap Semiconductor with a Channel Structure.

The creation of new families of intermetallic or Zintl-phase compounds with high-spin orbit elements has attracted a considerable amount of interest due to the presence of unique electronic, magnetic, and topological phenomena in these materials. Here, we establish the synthesis and structural and electronic characterization of KMg4Bi3 single crystals having a new structure type. KMg4Bi3 crystallizes in space group Cmcm having unit cell parameters a = 4.7654(11) Å, b = 15.694(4) Å, and c = 13.4200(30) Å and features an edge-sharing MgBi4 tetrahedral framework that forms cage-like one-dimensional channels around K+ ions. Diffuse reflectance absorption measurements indicate that this material has a narrow band gap of 0.27 eV, which is in close agreement with the electronic structure calculations that predict it to be a trivial insulator. Electronic transport measurements from 80 to 380 K indicate this material behaves like a narrow band gap semiconductor doped to ∼1018 holes/cm-3, with thermopowers of ∼100 µV/K and appreciable magnetoresistance. Electronic structure calculations indicate this material is close to a topological phase transition and becomes a topological insulator when the lattice is uniformly expanded by 3.5%. Overall, this unique structure type expands the landscape of potential quantum materials.

Synergizing a Large Ordinary Nernst Effect and Axis-Dependent Conduction Polarity in Flat Band KMgBi Crystals.

The exploration of quantum materials in which an applied thermo/electrical/magnetic field along one crystallographic direction produces an anisotropic response has led to unique functionalities. Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross-plane dispersion, which, in combination with an isotropic conduction band, enables axis-dependent conduction polarity. Thermopower and Hall measurements indicate dominant p-type conduction along the cross-plane direction, and n-type conduction along the in-plane direction, leading to a significant zero-field transverse thermoelectric response when the heat flux is at an angle to the principal crystallographic directions. Additionally, a large Ordinary Nernst effect (ONE) is observed with an applied field.  It arises from the ambipolar term in the Nernst effect, whereby the Lorentz force on electrons and holes makes them drift in opposite directions so that the resulting Nernst voltage becomes a function of the difference between their partial thermopowers, greatly enhancing the ONE. It is proven that axis-dependent polarity can synergistically enhance the ONE, in addition to leading to a zero-field transverse thermoelectric performance.

Axis dependent conduction polarity in the air-stable semiconductor, PdSe2.

Axis-dependent conduction polarity (ADCP) is a unique electronic phenomena in which the charge polarity of carrier conduction can differ from p-type to n-type depending on the direction of travel through the crystal. Most materials that exhibit ADCP are metals, and very few semiconducting materials exhibit this effect. Here, we establish that PdSe2, a ∼0.5 eV band gap semiconductor that is air- and water-stable, exhibits ADCP, through the growth and characterization of the transport properties of crystals with extrinsic p- and n-type doping levels of Ir and Sb, respectively, in the 1016-1018 cm-3 range. Electron doped PdSe2 exhibits p-type conduction in the cross-plane direction and n-type conduction along the in-plane directions above an onset temperature of 100-200 K that varies with doping level. Lightly p-doped samples show p-type thermopower in all directions at low temperatures, but above ∼360 K the in-plane thermopower turns negative. Density functional theory calculations indicate that the origin of ADCP arises from the complementary effective mass anisotropies in the valence and conduction bands in this material, which facilitate hole transport in the cross-plane direction, and electron transport along the in-plane directions. ADCP occurs at temperatures with sufficient thermal population of both carrier types to overcome the extrinsic doping levels to exploit the effective mass anisotropy. In total, the development of this stable semiconductor in which thermally or optically excited holes and electrons inherently migrate along different directions opens up numerous potential applications in a multitude of technologies.

Large Room Temperature Anomalous Transverse Thermoelectric Effect in Kagome Antiferromagnet YMn6 Sn6.

Kagome magnets possess several novel nontrivial topological features owing to the strong correlation between topology and magnetism that extends to their applications in the field of thermoelectricity. Conventional thermoelectric (TE) devices use the Seebeck effect to convert heat into electrical energy. In contrast, transverse thermoelectric devices based on the Nernst effect are attracting recent attention due to their unique transverse geometry, which uses a single material to eliminate the need for a multitude of electrical connections compared to conventional TE devices. Here, a large anomalous transverse thermoelectric effect of ≈2 µV K-1 at room temperature in a kagome antiferromagnet YMn6 Sn6 single crystal is obtained. The obtained value is larger than that of state-of-the-art canted antiferromagnetic (AFM) materials and comparable with ferromagnetic systems. The large anomalous Nernst effect (ANE) can be attributed to the net Berry curvature near the Fermi level. Furthermore, the ANE of the AFM YMn6 Sn6 exceeds the magnetization scaling relationship of conventional ferromagnets. The results clearly illustrate that AFM material YMn6 Sn6 is an ideal topological material for room-temperature transverse thermoelectric applications.

CrxPt1-xTe2 (x ≤ 0.45): A Family of Air-Stable and Exfoliatable van der Waals Ferromagnets.

The development of thermally robust, air-stable, exfoliatable two-dimensional van der Waals ferromagnetic materials with high transition temperatures is of great importance. Here, we establish a family of magnetic alloys, CrxPt1-xTe2 (x ≤ 0.45), that combines the stability of the late transition metal dichalcogenide PtTe2 with magnetism from Cr. These materials are easily grown in crystal form from the melt, are stable in ambient conditions, and have among the highest concentrations of magnetic element substitution in transition metal dichalcogenide alloys. The highest Cr-substituted material, Cr0.45Pt0.55Te2, exhibits ferromagnetic behavior below 220 K, and the easy axis is along the c-axis of the material, as determined using a combination of neutron diffraction and magnetic susceptibility measurements. These materials are metallic, with appreciable magnetoresistance below the Curie temperature. Single-crystal and powder diffraction measurements indicate Cr readily alloys onto the Pt site and does not sit in the van der Waals space, allowing these materials to be readily exfoliated to the few-layer regime. In summary, this air-stable, exfoliatable, high transition temperature ferromagnet shows great potential as building block for future 2D devices.

The Chemical Design Principles for Axis-Dependent Conduction Polarity.

The recent discovery that specific materials can simultaneously exhibit n-type conduction and p-type conduction along different directions of the single crystal has the potential to impact a broad range of electronic and energy-harvesting technologies. Here, we establish the chemical design principles for creating materials with this behavior. First, we define the single-carrier and multicarrier mechanisms for axis-dependent conduction polarity and their identifying band structure fingerprints. We show using first-principles predictions that the AMX (A = Ca, Sr, Ba; M = Cu, Ag, Au; X = P, As, Sb) compounds consisting of MX honeycomb layers separated by A cations can exhibit p-type conduction in-plane and n-type conduction cross-plane via either mechanism depending on the doping level. We build up the band structure of BaCuAs using a molecular orbital approach to illustrate the structural origins of the two different mechanisms for axis-dependent conduction polarity. In total, this work shows this phenomenon can be quite prevalent in layered materials and reveals how to identify prospective materials.