RESUMO
In blue phosphorescent dopants, the tetradentate platinum(II) complex is a promising material showing high efficiency and stability in devices. However, metal-metal-to-ligand charge transfer (MMLCT) formation leads to low photo-luminescence quantum yields (PLQYs), wide spectra, and intermolecular interaction. To suppress MMLCT, PtON-tb-TTB and PtON-tb-DTB are designed using theoretical simulation by modifying t-butyl in PtON-TBBI. Both materials effectively suppress MMLCT and exhibit high PLQYs of 99% and 78% in 5 wt% doped film, respectively. The PtON-tb-TTB and PtON-tb-DTB devices have maximum external quantum efficiencies of 26.3% and 20.9%, respectively. Additionally, the PtON-tb-DTB device has an extended lifetime of 169.3 h with an initial luminescence of 1200 nit, which is 8.5 times greater than the PtON-TBBI device. Extended lifetime because of suppressed MMLCT and smaller displacement between the lowest triplet and triplet metal-centered states compared to other dopants. The study provides an effective approach to designing platinum(II) complexes for long device lifetimes.
RESUMO
We report high light extraction from the top emission OLED (TEOLED) device structure by improving mainly the waveguide mode loss in the atomic layer deposition processed thin film encapsulation (TFE) layer. A novel structure incorporating the light extraction concept using evanescent waves and the hermetic encapsulation of a TEOLED device is presented here. When the TEOLED device is fabricated using the TFE layer, a substantial amount of generated light is trapped inside the device due to the difference in refractive index (RI) between the capping layer (CPL) and the aluminum oxide (Al2O3) layer. By inserting a low RI layer at the interface between the CPL and Al2O3, the direction of the internal reflected light is changed by the evanescent waves. The high light extraction with the low RI layer is attributed to the presence of evanescent waves and an electric field in the low RI layer. The novel fabricated TFE structure, CPL/ low RI layer/ Al2O3/ polymer/ Al2O3, is reported here. The current efficiency of the fabricated blue TEOLED device using this low RI layer is improved by about 23% and the blue index value is enhanced by about 26%. This new approach for light extraction will be applicable to future encapsulation technology for flexible optoelectronic devices.
RESUMO
Developing double boron-based emitters with extremely narrow band spectrum and high efficiency in organic light-emitting diodes (OLEDs) is crucial and challenging. Herein, we report two materials, NO-DBMR and Cz-DBMR, hinge on polycyclic heteraborin skeletons based on role-play of the highest occupied molecular orbital (HOMO) energy levels. The NO-DBMR contains an oxygen atom, whereas the Cz-DBMR has a carbazole core in the double boron-embedded ν-DABNA structure. The synthesized materials resulted in an unsymmetrical pattern for NO-DBMR and surprisingly a symmetrical pattern for Cz-DBMR. Consequently, both materials showed extremely narrow full width at half maximum (FWHM) of 14â nm in hypsochromic (pure blue) and bathochromic (Bluish green) shifted emission without losing their high color fidelity. Furthermore, both materials show high photoluminescence quantum yield (PLQY) of over 82 %, and an extremely small singlet-triplet energy gap (ΔEST ) of 0.04â eV, resulting in high reverse intersystem crossing process (kRISC ) of 105 â s-1 . Due to the efficient thermally activated delayed fluorescence (TADF) characteristics, the fabricated OLEDs based on these heteraborins manifested maximum external quantum efficiency (EQEmax ) of 33.7 and 29.8 % for NO-DBMR and Cz-DBMR, respectively. This is the first work reported with this type of strategy for achieving an extremely narrow emission spectrum in hypsochromic and bathochromic shifted emissions with a similar molecular skeleton.
