Structural characterization and magnetic response of poly(p-xylylene)-MnSb and MnSb films deposited at cryogenic temperature.

In this study, we employed several experimental techniques to investigate structure and magnetic properties of poly(p-xylylene)-MnSb composites synthesized by low-temperature vapor deposition polymerization technique and MnSb films deposited at various temperatures. The presence of MnSb nanocrystallites in the studied films was verified by the results of X-ray diffraction, electron microscopy and Raman spectroscopy studies. The obtained data revealed the formation of Sb-rich sublayer with well-oriented Sb grains near the susbtrate, which seems to act as a buffer for the consequent poly(p-xylylene)-MnSb or MnSb layer growth. Increasing the polymer content results in qualitative change of surface morphology of studied films. At high polymer content the hybrid nanocomposite with MnSb nanoparticles embedded into poly(p-xylylene) matrix is formed. All investigated samples demonstrated detectable ferromagnetic response at room temperature, while the parameters of this response revealed a complex correlation with nominal composition, presented crystal phases and surface morphology of studied films. Estimated values of the Curie temperature of the samples are close to that of bulk MnSb.

Control of Mooij correlations at the nanoscale in the disordered metallic Ta-nanoisland FeNi multilayers.

Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10[Formula: see text]-10[Formula: see text] Bohr magnetons ([Formula: see text]). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.

Magnetism of Bi2Se3 thin films with Eu-rich flat inclusions.

We report the results of experimental and theoretical studies of Eu-doped Bi2Se3 thin films with extremely inhomogeneous distribution of magnetic component. The obtained electron microscopy images suggest that Eu atoms are concentrated within platelet-like nanoinclusions. The number of inclusions grows with the increase in Eu content, x. Moreover, at relatively high x values, the stacks of platelets (inclusions located one under another) become rather frequent. A comparative analysis of magnetic properties of the films under study reveals no pronounced changes of their temperature dependence with the increase in x, which, however, leads to the decrease in the average magnetic moment [Formula: see text] per Eu atom. A theoretical analysis of different mechanisms contributing to a possible magnetic ordering in the Eu-doped films demonstrates that at small distances (i.e. within a platelet) a dominant contribution is related to the RKKY interaction via electrons in the bulk, while the ordering at inter-platelet distances is governed by magnetic dipole-dipole interaction. The latter implies the antiferromagnetic ordering within the stacks of platelets explaining a drop of [Formula: see text] per Eu atom. We employ the model of a metallic spin glass to estimate the transition temperature, characterising the interaction within the ensemble of randomly distributed magnetic platelets. This estimate gives satisfactory agreement with the experiment, even if we take into account a finite film thickness, thus, neglecting the interaction anisotropy and including only the antiferromagnetism related to the stacking. While the overall contribution of interface Dirac electrons is damped in the systems under study, we argue that the obtained results can be used for the investigation of ultrathin films with analogous impurity profile, where this contribution should be clearly pronounced.

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.