Emission color tuning and dual-mode luminescence thermometry design in Dy3+/Eu3+co-doped SrMoO4phosphors.

The challenge of building a highly reliable contactless temperature probe with high sensitivity, good temperature-induced color discriminability, and economical synthesis has prompted the research community to work in the field of rare-earth-based luminescence thermometry. Moreover, the fast-growing market for optoelectronic devices has increased the demand for tunable color-emitting phosphors. In this study, Dy3+/Eu3+co-doped SrMoO4phosphors were developed as tunable color-emitting source and dual-mode luminescence thermometer. A facile and cost-effective auto-combustion method was used to synthesize the phosphors. Our work demonstrates a viable scheme for tailoring the emission of single-phase phosphors by precisely controlling the dopant concentrations and by modulating excitation wavelength. The overall emission is tuned from greenish-yellow to white and greenish-yellow to reddish-orange. A detailed energy transfer process from the host to the Ln3+ions and between the Ln3+ions is discussed. Further, anti-thermal quenching in the emission of Dy3+ion is observed when excited with 297 nm. The dual-mode luminescence thermometry has been studied by analyzing the fluorescence intensity ratio of Dy3+and Eu3+ions upon excitation at 297 nm. The maximum relative sensitivity value for 4% Eu3+co-doped SrMoO4:4%Dy3+phosphor is 1.46% K-1at 300 K. Furthermore, the configurational coordinate diagram is presented to elucidate the nature of temperature-dependent emission. Therefore, our research opens up new avenues for the development of color-tunable luminescent materials for various optoelectronic and temperature-sensing applications.

Improvement in white light emission of Dy3+doped CaMoO4via Zn2+co-doping.

The research in developing a single ingredient phosphor for white-light emission is progressively increasing. It is well known that the4F9/2 â†’ 6H13/2(yellow) and4F9/2 â†’ 6H15/2(blue) transitions of Dy3+ions give near-white light emission. The white light emission of Dy3+ions can be enhanced via improving the crystallinity of the host phosphor via co-doping of transition metal ions. In this paper, we report a significant improvement in the white light emission of Dy3+doped CaMoO4by co-doping Zn2+ions. The x-ray diffraction pattern confirms the tetragonal phase of pure and doped CaMoO4phosphor. The peak broadening and a red-shift in the absorption peak are observed by UV-vis absorption analysis of Zn2+/Dy3+doped CaMoO4. From Photoluminescence studies, we have observed that in Dy3+doped CaMoO4, the 4% Dy3+doped CaMoO4exhibits maximum emission. The Zn2+ions are co-doped to further increase the luminescence intensity of CaMoO4:4%Dy3+and the maximum luminescence is obtained for 0.25% Zn2+concentration. Two intense emission peaks centered at 484 nm and 574 nm related to transitions4F9/2 â†’ 6H15/2and4F9/2 â†’ 6H13/2of Dy3+ion are observed for Dy3+doped phosphor. The4F9/2 â†’ 6H13/2transition is the forced electric dipole transition which is affected by its chemical environment. After Zn2+co-doping, the4F9/2 â†’ 6H13/2transition is affected due to a change in asymmetricity around the Dy3+ions. The 0.25% co-doping of Zn2+gives 34% enhancement in luminescence emission of 4% Dy3+doped CaMoO4. As a result, the CIE coordinates of chromaticity diagram and the color purity of the 0.25% Zn2+co-doped CaMoO4:4Dy3+show improvement in the overall white light emission. We have shown that with Zn2+co-doping, the non-radiative relaxations are reduced which results in improved white light emission of Dy3+ions.

Tunable temperature-dependent THz photonic bandgaps and localization mode engineering in 1D periodic and quasi-periodic structures with graded-index materials and InSb.

We present the tunability of terahertz (THz) photonic bandgaps and localization modes in one-dimensional (1D) periodic and quasi-periodic structures based on alternating layers of graded-index materials and InSb. These configurations show that operation frequencies of photonic bands and localization modes can be tuned by controlling temperature, structural and grading parameters, grading profiles, and different quasi-periodic arrangements. The number of photonic bands and localization modes can also be modulated with layer thickness and quasi-periodic arrangements. Changes in the grouping of the materials considered also modulate the operation frequencies of photonic bands and localization modes in quasi-periodic structures. Results can be implemented to design thermo-tunable THz filters, reflectors, sensors, etc.

Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.