Agendas on Nursing in South Korea Media: Natural Language Processing and Network Analysis of News From 2005 to 2022.

BACKGROUND: In recent years, Korean society has increasingly recognized the importance of nurses in the context of population aging and infectious disease control. However, nurses still face difficulties with regard to policy activities that are aimed at improving the nursing workforce structure and working environment. Media coverage plays an important role in public awareness of a particular issue and can be an important strategy in policy activities. OBJECTIVE: This study analyzed data from 18 years of news coverage on nursing-related issues. The focus of this study was to examine the drivers of the social, local, economic, and political agendas that were emphasized in the media by the analysis of main sources and their quotes. This analysis revealed which nursing media agendas were emphasized (eg, social aspects), neglected (eg, policy aspects), and negotiated. METHODS: Descriptive analysis, natural language processing, and semantic network analysis were applied to analyze data collected from 2005 to 2022. BigKinds were used for the collection of data, automatic multi-categorization of news, named entity recognition of news sources, and extraction and topic modeling of quotes. The main news sources were identified by conducting a 1-mode network analysis with SNAnalyzer. The main agendas of nursing-related news coverage were examined through the qualitative analysis of major sources' quotes by section. The common and individual interests of the top-ranked sources were analyzed through a 2-mode network analysis using UCINET. RESULTS: In total, 128,339 articles from 54 media outlets on nursing-related issues were analyzed. Descriptive analysis showed that nursing-related news was mainly covered in social (99,868/128,339, 77.82%) and local (48,056/128,339, 48.56%) sections, whereas it was rarely covered in economic (9439/128,339, 7.35%) and political (7301/128,339, 5.69%) sections. Furthermore, 445 sources that had made the top 20 list at least once by year and section were analyzed. Other than "nurse," the main sources for each section were "labor union," "local resident," "government," and "Moon Jae-in." "Nursing Bill" emerged as a common interest among nurses and doctors, although the topic did not garner considerable attention from the Ministry of Health and Welfare. Analyzing quotes showed that nurses were portrayed as heroes, laborers, survivors of abuse, and perpetrators. The economic section focused on employment of youth and women in nursing. In the political section, conflicts between nurses and doctors, which may have caused policy confusion, were highlighted. Policy formulation processes were not adequately reported. Media coverage of the enactment of nursing laws tended to relate to confrontations between political parties. CONCLUSIONS: The media plays a crucial role in highlighting various aspects of nursing practice. However, policy formulation processes to solve nursing issues were not adequately reported in South Korea. This study suggests that nurses should secure policy compliance by persuading the public to understand their professional perspectives.

Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes.

We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN grown on h-BN, a comparison was conducted with GaN grown on a sapphire substrate. Photoluminescence spectroscopy and X-ray diffraction confirmed that the crystallinity of GaN deposited on h-BN was inferior to that of GaN grown on conventional GaN. To validate the practical applicability of the GaN layer grown on h-BN, we subsequently grew an NUV-LED structure and fabricated a device that operated well in optoelectrical performance experiments. Our findings validate the potential usefulness of h-BN to be a substrate in the direct growth of a GaN layer.

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes.

Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs.

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.

Leathesia difformis Extract Inhibits α-MSH-Induced Melanogenesis in B16F10 Cells via Down-Regulation of CREB Signaling Pathway.

Leathesia difformis (L.) Areschoug (L. difformis) is a species of littoral brown algae of the class Phaeophyceae. Only a few studies on the apoptotic, antiviral, and antioxidant properties of L. difformis have been reported, and its inhibitory effect on melanin synthesis has not been studied. The aim of this study was to investigate the anti-melanogenic effect of L. difformis extract on α-melanocyte-stimulating hormone (α-MSH)-induced B16F10 melanocytes and its mechanism of action. L. difformis was extracted using 80% ethanol (LDE) and then fractioned between ethyl acetate (LDE-EA) and water (LDE-A). Our data demonstrated that LDE-EA significantly inhibited melanin level and cellular tyrosinase activity in α-MSH-stimulated B16 cells. In addition, the expression of genes associated with melanin synthesis, such as microphthalmia-associated transcription factor (Mitf), tyrosinase (Tyr), tyrosinase-related protein-1 (Trp-1), dopachrome tautomerase (Dct), and melanocortin 1 receptor (Mc1r) was down-regulated by LDE-EA treatment. Moreover, LDE-EA decreased p-CREB levels, which suggests that the inhibition of the cAMP/PKA/CREB pathways may be involved in the anti-melanogenic effect of LDE-EA. Thus, this study revealed that LDE-EA is an effective inhibitor of hyperpigmentation through inhibition of CREB pathways and may be considered as a potential therapeutic agent for hyperpigmentation disorders.

Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes.

High-density threading dislocations, the presence of biaxial compressive strain, and heat generation are the major limitations obstructing the performance and reliability of light emitting diodes (LEDs). Herein, we demonstrate a facile epitaxial lateral overgrowth (ELOG) method by incorporating boron nitride nanotubes (BNNTs) on a sapphire substrate by spray coating to resolve the above issues. Atomic force microscopy, X-ray diffraction, micro-Raman, and photoluminescence measurements confirmed the growth of a high quality GaN epilayer on the BNNT-coated sapphire substrate with reduced threading dislocations and compressive strain owing to the ELOG process. GaN LEDs fabricated using this approach showed a significant enhancement in the internal quantum efficiency and electroluminescence intensity compared to conventional LEDs grown on sapphire. Moreover, reduced efficiency droop and surface temperature at high injection currents were achieved due to the excellent thermal stability and conductivity of BNNTs. Based on our findings we infer that the BNNTs would be a promising material for high power devices vulnerable to self-heating problems.

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes.

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes.

Using single-walled carbon nanotubes (SWCNTs) as nanomasks on an undoped GaN template, a significant biaxial stress relaxation was achieved in the subsequently-grown Si-doped n-GaN layer. Enhanced near band edge (NBE) emission intensity, similar free carrier concentrations, and the reduced peak width of the asymmetric (102) crystallographic plane all confirmed the suppression of threading dislocations due to the nanoepitaxial growth process. Temperature-dependent photoluminescence (PL) revealed improved internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) grown on this n-GaN layer. Furthermore, enhanced light output power and a remarkable reduction in efficiency droop were observed for the blue light-emitting diodes (LEDs), especially at higher injection currents. Our results emphasize the strong potential for SWCNTs as nanomasks in the heteroepitaxy of GaN-based devices without the exploitation of complicated lithography or etching processes.

Dual-Wavelength Light Emission from CdSe/ZnS Quantum Dots on Blue Light-Emitting Diodes.

We fabricated light-emitting device by using CdSe/ZnS quantum dots (QDs) on InGaN/GaN blue light-emitting diodes (LEDs) for converting blue emission into green emission. By adding Au nanoparticles (ANPs) to generate localized surface plasmon mode, the integrated intensity of green emission of LEDs with CdSe/ZnS QDs on ANPs is enhanced by about 55%, without any drawback in electrical characteristics of LEDs. This result is attributed to an increased conversion efficiency by resonance coupling between localized surface plasmons in ANPs and excitons in CdSe/ZnS QDs.

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.

A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.

Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them.

[An analysis of cancer survival narratives using computerized text analysis program].

PURPOSE: This study was done to explore experiences of persons living through the periods of cancer diagnosis, treatment, and self-care. METHODS: With permission, texts of 29 cancer survival narratives (8 men and 21 women, winners in contests sponsored by two institutes), were analyzed using Kang's Korean-Computerized-Text-Analysis-Program where the commonly used Korean-Morphological-Analyzer and the 21st-century-Sejong-Modern-Korean-Corpora representing laymen's Korean-language-use are connected. Experiences were explored based on words included in 100 highly-used-morphemes. For interpretation, we used 'categorizing words by meaning', 'comparing use-rate by periods and to the 21st-century-Sejong-Modern-Korean-Corpora', and highly-used-morphemes that appeared only in a specific period. RESULTS: The most highly-used-word-morpheme was first-person-pronouns followed by, diagnosis·treatment-related-words, mind-expression-words, cancer, persons-in-meaningful-interaction, living and eating, information-related-verbs, emotion-expression-words, with 240 to 0.8 times for layman use-rate. 'Diagnosis-process', 'cancer-thought', 'things-to-come-after-diagnosis', 'physician·husband', 'result-related-information', 'meaningful-things before diagnosis-period', and 'locus-of-cause' dominated the life of the diagnosis-period. 'Treatment', 'unreliable-body', 'husband · people · mother · physician', 'treatment-related-uncertainty', 'hard-time', and 'waiting-time represented experiences in the treatment-period. Themes of living in the self-care-period were complex and included 'living-as-a-human', 'self-managing-of-diseased-body', 'positive-emotion', and 'connecting past · present · future'. CONCLUSION: The results show that the experience of living for persons with cancer is influenced by each period's own situational-characteristics. Experiences of the diagnosis and treatment-period are negative disease-oriented while that of the self-care period is positive present-oriented.

Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.

Light extraction efficiency of GaN-based light emitting diodes were significantly enhanced using silver nanostructures incorporated in periodic micro-hole patterned multi quantum wells (MQWs). Our results show an enhancement of 60% in the wall-plug efficiency at an injection current of 100 mA when Ag nano-particles were deposited on side facet of MQWs passivated with SiO2. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between localized surface plasmons in Ag nano-particles and the excitons in MQWs.

Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.

We report effect of the strain relaxation in InGaN/GaN multi-quantum well (MQW) structures grown on platinum nanocluster-coated sapphire substrate (PNSS) by metal organic chemical vapor deposition. The photoluminescence (PL) intensity of InGaN/GaN MQWs on PNSS was significantly enhanced compared to that of the InGaN/GaN MQWs on flat sapphire substrate due to the reduction of defect density and residual strain by self-assembled Pt nanoclusters. We confirmed the reduction of strain-induced piezoelectric field by the power dependence of the PL in InGaN/GaN MQWs on PNSS. Cathodoluminescence shows that a large bright area with overall strong peak intensity is attributed to the suppression of In inhomogeneity and strain relaxation in InGaN/GaN MQWs on PNSS. Based on these results, we suggest that the self-assembled Pt nanocluster can be applied to increase the quantum efficiency through improved crystal quality and internal strain relaxation in MQWs.

Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode.

We report GaN-based near ultraviolet (UV) light emitting diode (LED) that combines indium tin oxide (ITO) nanodot nodes with two-dimensional graphene film as a UV-transparent current spreading electrode (TCSE) to give rise to excellent UV emission efficiency. The light output power of 380 nm emitting UV-LEDs with graphene film on ITO nanodot nodes as TCSE was enhanced remarkably compared to conventional TCSE. The increase of the light output power is attributed to high UV transmittance of graphene, effective current spreading and injection, and texturing effect by ITO nanodots.

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate.

GaN-based light-emitting diode (LED) was fabricated on the sapphire substrate with monolithic convex microstructures (CMs) array. Using confocal scanning electroluminescence (EL), we have directly observed the strong outcoupling phenomenon of the light confined in a LED via the CMs array. This outcoupled light could be efficiently converged on the convex center through consecutive reflections at the flat area and the curved slant area of the CMs array. Compared to the conventional LED, the ray tracing simulation and far field EL results of the LED with a CM array showed efficient light extraction toward the top surface, i.e., 0-5, 40-45 and 60-65 degree by the outcoupling effect. We conclude that the outcoupled optical path via CMs is the dominant factor of the enhanced light extraction in the LED with a CM array.