Whole-genome sequencing of Beauveria bassiana KNU-101 using the hybrid assembly approach.

In this report, we present the whole-genome sequences of Beauveria bassiana KNU-101, a widely recognized entomopathogenic fungus used as a biopesticide. The genome was assembled using a hybrid assembly approach, resulting in 13 scaffolds with a total size of 35,638,224 bp.

Changes in Microbial Community Structure in Response to Gummosis in Peach Tree Bark.

Peach gummosis disease has been identified as a serious challenge in Korean agriculture and has developed to become a major cause of agricultural productivity losses. However, treatments for gummosis have not been systemically established and studies of the microbiome closely related to this plant disease are lacking. Therefore, we analyzed the bacterial and fungal communities in the bark and rhizosphere soil of healthy peach trees and those with gummosis. Through high-throughput sequencing, we obtained unprecedented insights into the bacterial and fungal dynamics of each group, including their diversity and taxonomic classification, as well as network analyses. We found that the presence of gummosis drives a significantly higher alpha diversity in the bark bacterial community. Peach gummosis bark mycobiomes included greater numbers of opportunistic pathogens such as Ascochyta, Botryosphaeria, Saccharomyces, Nectriaceae_NA, Trametes, and Valsaceae_NA. However, the microbiome also included bacteria beneficial to plant growth and the production of polysaccharides-namely, 1174-901-12, Catenibacterium, Cutibacterium, Friedmanniella, Methylobacterium-Methylorubrum, Pseudomonas, Rhodobacter, and Sphingomonas. Furthermore, we confirmed that gummosis induced a more complex structure in the bark microbiome network. We conclude that the findings of this study provide a valuable aid in profiling the overall peach tree microbial ecosystem, which can be utilized to develop precise biomarkers for the early diagnosis of gummosis.

Alteration of the Soil Microbiota in Ginseng Rusty Roots: Application of Machine Learning Algorithm to Explore Potential Biomarkers for Diagnostic and Predictive Analytics.

Conceptualization to utilize microbial composition as a prediction tool has been widely applied in human cohorts, yet the potential capacity of soil microbiota as a diagnostic tool to predict plant phenotype remains unknown. Here, we collected 130 soil samples which are 54 healthy controls and 76 ginseng rusty roots (GRRs). Alpha diversities including Shannon, Simpson, Chao1, and phylogenetic diversity were significantly decreased in GRR (P < 0.05). Moreover, we identified 30 potential biomarkers. The optimized markers were obtained through fivefold cross-validation on a support vector machine and yielded a robust area under the curve of 0.856. Notably, evaluation of multi-index classification performance including accuracy, F1-score, and Kappa coefficient also showed robust discriminative capability (90.99%, 0.903, and 0.808). Taken together, our results suggest that the disease affects the microbial community and offers the potential ability of soil microbiota to identifying farms at the risk of GRR.

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network.

The thin-film growth conditions in a plasma-enhanced atomic layer deposition for the (3.0-4.5) nm thick HfO2 film were optimized to use the film as the resistive switching element in a neuromorphic circuit. The film was intended to be used as a feasible synapse with analog-type conductance-tuning capability. The 4.5 nm thick HfO2 films on both conventional TiN and a new RuO2 bottom electrode required the electroforming process for them to operate as a feasible resistive switching memory, which was the primary source of the undesirable characteristics as the synapse. Therefore, electroforming-free performance was necessary, which could be accomplished by thinning the HfO2 film down to 3.0 nm. However, the device with only the RuO2 bottom electrode offered the desired functionality without involving too high leakage or shorting problems, which are due to the recovery of the stoichiometric composition of the HfO2 near the RuO2 layer. In conjunction with the Ta top electrode, which provided the necessary oxygen vacancies to the HfO2 layer, and the high functionality of the RuO2 as the scavenger of excessive incorporated oxygen vacancies, which appeared to be inevitable during the repeated switching operation, the Ta/3.0 nm HfO2/RuO2 provided a highly useful synaptic device component in the neuromorphic hardware system.

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory.

The high nonuniformity and low endurance of the resistive switching random access memory (RRAM) are the two major remaining hurdles at the device level for mass production. Incremental step pulse programming (ISPP) can be a viable solution to the former problem, but the latter problem requires material level innovation. In valence change RRAM, electrodes have usually been regarded as inert (e.g., Pt or TiN) or oxygen vacancy (VO) sources (e.g., Ta), but different electrode materials can serve as a sink of VO. In this work, an RRAM using a 1.5 nm-thick Ta2O5 switching layer is presented, where one of the electrodes was VO-supplying Ta and the other was either inert TiN or VO-sinking RuO2. Whereas TiN could not remove the excessive VO in the memory cell, RuO2 absorbed the unnecessary VO. By carefully tuning (balancing) the capabilities of VO-supplying Ta and VO-sinking RuO2 electrodes, an almost invariant ISPP voltage and a greatly enhanced endurance performance can be achieved.

Nociceptive Memristor.

The biomimetic characteristics of the memristor as an electronic synapse and neuron have inspired the advent of new information technology in the neuromorphic computing. The application of the memristors can be extended to the artificial nerves on condition of the presence of electronic receptors which can transfer the external stimuli to the internal nerve system. In this work, nociceptor behaviors are demonstrated from the Pt/HfO2 /TiN memristor for the electronic receptors. The device shows four specific nociceptive behaviors; threshold, relaxation, allodynia, and hyperalgesia, according to the strength, duration, and repetition rate of the external stimuli. Such nociceptive behaviors are attributed to the electron trapping/detrapping to/from the traps in the HfO2 layer, where the depth of trap energy level is ≈0.7 eV. Also, the built-in potential by the work function mismatch between the Pt and TiN electrodes induces time-dependent relaxation of trapped electrons, providing the appropriate relaxation behavior. The relaxation time can take from several milliseconds to tens of seconds, which corresponds to the time span of the decay of biosignal. The material-wise evaluation of the electronic nociceptor in comparison with other material, which did not show the desired functionality, Pt/Ti/HfO2 /TiN, reveals the importance of careful material design and fabrication.

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.

To replace the present NAND flash memory, resistance switching random access memory (ReRAM), which has both memory and selection functionalities with a simple metal-insulator-metal structure should be implemented. To accomplish this goal, ReRAM must be self-rectifying, low-power-consuming, and highly uniform, and it must have reliable states. In this work, the Pt/TiO2/HfO2-x/TiN resistive switching memory structure showed self-rectifying resistive switching behavior with unprecedented unique I-V curves. This is named "self-current saturation," which can give an extremely uniform variation of the low resistance state. The plausible reasons for the whole switching behavior, including the unique I-V curves, in this material system are presented herein. The diffusion of Ti along the grain boundaries of HfO2 down to the bottom electrode TiN and the defect formation within the HfO2 layer near the TiO2/HfO2 interface made the resistance switching device have the characteristics of both the unidirectional diode and electronic bipolar switching devices.

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.

The endurance of switching cycles, which is a critical measure of device reliability, in an ultra-thin (1.5 nm) Ta2O5 and HfO2 resistive random access (ReRAM) memory cell with a 28 nm lateral dimension was studied using current-voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. The two devices showed the typical oxygen-deficient conducting-filament (CF)-mediated bipolar resistance switching behaviour, which was induced by the asymmetric electrode configuration: Ta as the oxygen vacancy (VO) source/reservoir and TiN as the inert electrode. In these device geometries, the CF is supposed to initiate at the oxide/TiN interface and to grow towards the Ta electrode during the switch-on process, while the switch-off process was induced by the contraction of the CF from the Ta/oxide interface. Both devices, however, showed inversion (anomalous SET; switching from the off- to on-state) behaviour in the RESET (switching from the on- to off-state) process, which can be explained by the authors' previous model of the hourglass-shaped CF. In this model, once the CF is ruptured, the RESET polarity bias makes the lower portion of the CF regrow to slightly reconnect such a CF through the accelerated migration of VO from the upper-portion CF to the lower-portion CF, which induces switching performance degradation. In the I-V sweeps, the on- and off-states of the devices showed an overall conductance difference approximately corresponding to the integer multiple values of quantum point contact (G0), but there were arbitrary 0.25 and 0.125G0 differences in the conductance values of the on-state for the Ta2O5 and HfO2 devices, respectively. This suggests that these are the minimal units of conductance variation even for a given CF with a standard G0. Although the precise reason for the emergence of such an abnormal conductance unit is not yet understood, its implication for the reliability is critical. Reliable resistive switching was achieved only for the cases where the minimum point conductance was retained even in the off-state; in the other cases, over-SET and over-RESET were induced, which eventually degraded the device reliability. The detailed quantitative analysis of the device failure revealed that the increasing concentration of VO within the non-CF region in the cell decreased the resistance values of that region, which eventually resulted in the over-SET and over-RESET behaviours during the CLPS tests.

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation between the formation and rupture of the Magnéli-based conducting filament (CF), which is the mechanism of non-polar thermochemical-reaction-based switching, and the electron trapping/detrapping at the defect centers, which is the mechanism of bipolar electronic switching, is examined in detail. The chemical interaction between the TiN top electrode and the TiO2 layer generates a stable and immobile electron trapping layer, which is called a "switching layer", whereas the thin region between the just-mentioned switching layer and the remaining Magnéli CF after the thermochemical reset comprises a non-switching layer. The seemingly very complicated switching behavior with respect to the bias polarity, compliance current, and detailed biasing sequence could be reasonably explained by the phenomenological model based on the combined motions of the CF, switching layer, and non-switching layer. Light-induced detrapping experiments further supplement the suggested switching model.

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-µm(2) Cell Area.

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-µm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 µm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell.

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current-voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

Dual conical conducting filament model in resistance switching TiO2 thin films.

The resetting behaviors of Pt/TiO2/Pt resistive switching (RS) cell in unipolar RS operations were studied in detail through an experiment and by modeling. The experiment showed that the apparently highly arbitrary resetting current-voltage (I-V) curves could be grouped into three types: normal, delayed, and abnormal behaviors. A dual conical conducting filament (CF) model was conceived, and their electrothermal behaviors were analytically described from the heat-balance and charge-transport equations. The almost spontaneous resetting behavior of the normal reset could be easily understood from the mutually constructive interference effect between the Joule heating and temperature-dependent resistance effect along the CF. The delayed reset could be explained by the time-dependent increase in the reset voltage during the rest process, which was most probably induced in the more conical-shaped CF. The abnormal reset could be understood from the temporal transfer of oxygen ions near the kink positions of the two different-diameter portions of the more cylindrical CFs, which temporally decreases the overall resistance immediately prior for the actual reset to occur. The accuracy of the dual conical CF model was further confirmed by adopting a more thorough electrothermal simulation package, COMSOL.

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides.

Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magnéli-phase-containing Pt/WO3/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO2/TiO2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.