Enhanced Light Trapping in GaAs/TiO2-Based Photocathodes for Hydrogen Production.

Photoelectrochemical cells (PEC) are appealing devices for the production of renewable energy carriers. In this context, III-V semiconductors such as GaAs are very promising materials due to their tunable band gaps, which can be appropriately adjusted for sunlight harvesting. Because of the high cost of these semiconductors, the nanostructuring of the photoactive layer can help to improve the device efficiency as well as drastically reduce the amount of material needed. III-V nanowire-based photoelectrodes benefit from the intrinsically high aspect ratio of nanowires, their enhanced ability to trap light, and their improved charge separation and collection abilities and thus are particularly attractive for PECs. However, III-V semiconductors often suffer from corrosion in aqueous electrolytes, preventing their utilization over long periods under relevant working conditions. Here, photocathodes of GaAs nanowires protected with thin TiO2 shells were prepared and studied under simulated sunlight irradiation to assess their photoelectrochemical performances in correlation with their structural degradation, highlighting the advantageous nanowire geometry compared to its thin-film counterpart. Morphological and electronic parameters, such as the aspect ratio of the nanowires and their doping pattern, were found to strongly influence the photocatalytic performances of the system. This work highlights the advantageous combination of nanowires featuring a buried radial p-n junction with Co nanoparticles used as a hydrogen evolution catalyst. The nanostructured photocathodes exhibit significant photocatalytic activities comparable with previous noble-metal-based systems. This study demonstrates the potential of a GaAs nanostructured semiconductor and its reliable use for photodriven hydrogen production.

Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires.

The generation of photon pairs from nanoscale structures with high rates is still a challenge for the integration of quantum devices, as it suffers from parasitic signals from the substrate. In this work, we report type-0 spontaneous parametric down-conversion at 1550 nm from individual bottom-up grown zinc-blende GaAs nanowires with lengths of up to 5 µm and diameters of up to 450 nm. The nanowires were deposited on a transparent ITO substrate, and we measured a background-free coincidence rate of 0.05 Hz in a Hanbury-Brown-Twiss setup. Taking into account transmission losses, the pump fluence, and the nanowire volume, we achieved a biphoton generation of 60 GHz/Wm, which is at least 3 times higher than that of previously reported single nonlinear micro- and nanostructures. We also studied the correlations between the second-harmonic generation and the spontaneous parametric down-conversion intensities with respect to the pump polarization and in different individual nanowires.

Growing self-assisted GaAs nanowires up to 80µm long by molecular beam epitaxy.

Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor-liquid-solid method. In this ultralong regime we show the existence of two features concerning the growth kinetic and the structural properties. Firstly, we observed a non-classical growth mode, where the axial growth rate is attenuated. Secondly, we observed structural defects at the surface of Wurtzite segments located at the bottom part of the nanowires. We explain these two phenomena as arising from a particular pathway of the group V species, specific to ultralong nanowires. Finally, the optical properties of such ultralong nanowires are studied by photoluminescence experiments.

Effect of dry heat treatment between room temperature and 160 °C on surgical masks.

The Covid-19 crisis has led to a high demand and use of surgical masks worldwide, causing risks of shortages and pollution. Therefore, decontamination of surgical masks could be an opportunity to reduce these risks. In our study, we applied dry heat to the masks for 15 min at different temperatures and studied the consequences of heat on surface chemistry and fiber morphology. We focus here on the effects of dry heat treatment on the masks and not on the verification of mask disinfection, which has been thoroughly studied in existing literature. The masks that were heated to 70 °C, 100 °C, 130 °C, 140 °C, 150 °C did not show significant changes at the nanometric scale and the standard deviation of the surface temperature of the worn masks is similar to that of the unheated control mask. However we show a slight heating altered the hydrophobicity of the surface, and induced a significative modification of the wetting angle of water droplets. The mask heated to 157 °C has a higher surface temperature standard deviation and fused fibers are observed by scanning electron microscopy. The mask heated to 160 °C melted and then hardened as it cooled making it completely unusable.

Oxidized Titanium Tungsten Surface Functionalization by Silane-, Phosphonic Acid-, or Ortho-dihydroxyaryl-Based Organolayers.

Titanium tungsten (TiW) films (200 nm thick) were cleaned by oxygen plasma, and the resulting oxidized surfaces were functionalized by 3-aminopropylphosphonic acid (APPA), 3-ethoxydimethylsilylpropylamine (APDMES), or dopamine (DA) to form three different organolayers. The three resulting organolayers were characterized by X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Fourier transform infrared spectroscopy analyses. The stability of each organolayer was investigated. Our results suggested that the Si-O-Ti or Si-O-W bonds formed by the reactions of APDMES with surface-oxidized TiW were rather labile, whereas the catechol layer was less labile. The APPA layer was the most stable of all tested surface modifications.

Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111).

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE). We present a thorough experimental study on the self-assisted growth of GaAs NWs by using a MBE reactor equipped with two Ga cells located at different incidence angles with respect to the surface normal of the substrate, so as to ascertain the impact of such a parameter on the NW growth kinetics. The as-obtained results show a dramatic influence of the Ga flux incidence angle on the NW length and diameter, as well as on the shape and size of the Ga droplets acting as catalysts. In order to interpret the results we developed a semi-empirical analytical model inspired by those already developed for MBE-grown Au-catalyzed GaAs NWs. Numerical simulations performed with the model allow us to reproduce thoroughly the experimental results (in terms of NW length and diameter and of droplet size and wetting angle), putting in evidence that under formally the same experimental conditions the incidence angle of the Ga flux is a key parameter which can drastically affect the growth kinetics of the NWs grown by MBE.

1000 fps computational ghost imaging using LED-based structured illumination.

Single-pixel imaging uses a single-pixel detector, rather than a focal plane detector array, to image a scene. It provides advantages for applications such as multi-wavelength, three-dimensional imaging. However, low frame rates have been a major obstacle inhibiting the use of computational ghost imaging technique in wider applications since its invention one decade ago. To address this problem, a computational ghost imaging scheme, which utilizes an LED-based, high-speed illumination module is presented in this work. At 32 × 32 pixel resolution, the proof-of-principle system achieved continuous imaging with 1000 fps frame rate, approximately two orders larger than those of other existing ghost imaging systems. The proposed scheme provides a cost-effective and high-speed imaging technique for dynamic imaging applications.

Formation and optical properties of silver perfluorodecanethiolate nanoparticles.

This article reports a new catalytic method for preparing nanoparticles of silver thiolate from silver nanoparticles scattered on a ZrO2-coated substrate. Such nanoparticles transform into silver (perfluoro) decanethiolate after immersion in a solution of (perfluoro) decanethiol in heptane. These transformations occur at room temperature and are catalysed by ZrO2. The silver decanethiolate is obtained as lamellar crystals while the silver perfluorodecanethiolate is obtained in amorphous state. The modifications of the sample optical properties due to this latter compound are studied in correlation with its surface morphology, according to different preparation conditions. It is shown that an antireflective effect in addition to the damping of the plasmon band of the silver nanoparticles can be responsible for a large transmittance enhancement in the near-UV and visible ranges. These effects are modulated by the possible oxidation of the silver nanoparticle surface. In the absence of silver oxidation, the silver perfluorodecanethiolate is obtained as contiguous spheroidal nanoparticles, while, in the presence of silver oxidation, this compound is mainly obtained as entangled nanowires.