Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors.

The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.

Organic Electronics Picks Up the Pace: Mask-Less, Solution Processed Organic Transistors Operating at 160 MHz.

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy, and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution-processed and direct-written organic field-effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost- and energy-efficient manufacturability of flexible and conformable electronics with wireless-communication capabilities.

Cold Crystallization of the Organic n-Type Small Molecule Semiconductor 2-Decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene S,S,S',S'-Tetraoxide.

The asymmetric n-type Ph-BTBT-C10 derivative 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene S,S,S',S'-tetraoxide is structurally investigated in the thin film regime. After film preparation by spin coating and physical vapor deposition, a rather disordered structure is observed, with a strong change of its internal degree of order upon heating. At 95 °C, a transition into a layered structure of upright standing molecules without any in-plane order appears, and at 135 °C, crystallization takes place. This phase information is combined with surface morphological studies and charge carrier mobility measurements to describe the structure and thin film transistor applicability of this molecule.

Photo-electrical properties of 2D quantum confined metal-organic chalcogenide nanocrystal films.

Hybrid quantum wells are electronic structures where charge carriers are confined along stacked inorganic planes, separated by insulating organic moieties. 2D quantum-confined hybrid materials are of great interest from a solid-state physics standpoint because of the rich many-body phenomena they host, their tunability and easy synthesis, allowing the creation of material libraries. In addition, from a technological point of view, 2D hybrids are promising candidates for efficient, tunable, low-cost materials impacting a broad range of optoelectronic devices. Different approaches and materials have, therefore, been investigated, with the notable example of 2D metal halide hybrid perovskites. Despite the remarkable properties of such materials, the presence of toxic elements like lead is not desirable in applications and their ionic lattices may represent a limiting factor for stability under operating conditions. Therefore, non-ionic 2D materials made with non-toxic elements are preferable. In order to expand the library of possible hybrid quantum well materials, herein, we consider an alternative platform based on non-toxic, self-assembled, metal-organic chalcogenides. While the optical properties have been recently explored and some unique excitonic characters highlighted, photo-generation of carriers and their transport in these lamellar inorganic/organic nanostructures and critical optoelectronic aspects remain totally unexplored. We hereby report the first investigation on the electrical properties of the air-stable [AgSePh]∞ 2D coordination polymer in the form of nanocrystal (NC) films readily synthesized in situ and at low temperature, compatible with flexible plastic substrates. The wavelength-dependent photo-response of the NC films suggests the possible use of this material as a near-UV photodetector. We therefore built a lateral photo-detector, achieving a sensitivity of 0.8 A W-1 at 370 nm, thanks to a photoconduction mechanism, and a cut-off frequency of ∼400 Hz, and validated its reliability as an air-stable UV detector on flexible substrates.

Probing Mobile Charge Carriers in Semiconducting Carbon Nanotube Networks by Charge Modulation Spectroscopy.

Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network composition on charge transport on a microscopic level remains an open and complex question. Here, we use charge-modulated absorption and photoluminescence spectroscopy to probe exclusively the mobile charge carriers in monochiral (6,5) and mixed SWCNT network field-effect transistors. Ground-state bleaching and charge-induced trion absorption features as well as exciton quenching are observed depending on applied voltage and modulation frequency. Through correlation of the modulated mobile carrier density and the optical response of the nanotubes, we find that charge transport in mixed SWCNT networks depends strongly on the diameter and thus bandgap of the individual species. Mobile charges are preferentially transported by small bandgap SWCNTs especially at low gate voltages, whereas large bandgap species only start to participate at higher carrier concentrations. Our results demonstrate the excellent suitability of modulation spectroscopy to investigate charge transport in nanotube network transistors and highlight the importance of SWCNT network composition for their performance.

Accessing MHz Operation at 2 V with Field-Effect Transistors Based on Printed Polymers on Plastic.

Organic printed electronics are suitable for the development of wearable, lightweight, distributed applications in combination with cost-effective production processes. Nonetheless, some necessary features for several envisioned disruptive mass-produced products are still lacking: among these radio-frequency (RF) communication capability, which requires high operational speed combined with low supply voltage in electronic devices processed on cheap plastic foils. Here, it is demonstrated that high-frequency, low-voltage, polymer field-effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser-based techniques. These devices reach an operational frequency in excess of 1 MHz at the challengingly low bias voltage of 2 V, and exceed 14 MHz operation at 7 V. In addition, when integrated into a rectifying circuit, they can provide a DC voltage at an input frequency of 13.56 MHz, opening the way for the implementation of RF devices and tags with cost-effective production processes.

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm2 V-1 s-1 for common polymer and other semiconductor families at VG ≤ 2 V owing to high areal capacitance (>4 µF cm-2 ) from combined polarization of CF interface dipoles and electrical-double-layer formation.

Fully Solution-Processed n-i-p-Like Perovskite Solar Cells with Planar Junction: How the Charge Extracting Layer Determines the Open-Circuit Voltage.

Fully solution-processed direct perovskite solar cells with a planar junction are realized by incorporating a cross-linked [6,6]-phenyl-C61-butyric styryl dendron ester layer as an electron extracting layer. Power conversion efficiencies close to 19% and an open-circuit voltage exceeding 1.1 V with negligible hysteresis are delivered. A perovskite film with superb optoelectronic qualities is grown, which reduces carrier recombination losses and hence increases V oc .

Direct-written polymer field-effect transistors operating at 20 MHz.

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm-1, and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.

Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics.

High-mobility semiconducting polymers offer the opportunity to develop flexible and large-area electronics for several applications, including wearable, portable and distributed sensors, monitoring and actuating devices. An enabler of this technology is a scalable printing process achieving uniform electrical performances over large area. As opposed to the deposition of highly crystalline films, orientational alignment of polymer chains, albeit commonly achieved by non-scalable/slow bulk alignment schemes, is a more robust approach towards large-area electronics. By combining pre-aggregating solvents for formulating the semiconductor and by adopting a room temperature wired bar-coating technique, here we demonstrate the fast deposition of submonolayers and nanostructured films of a model electron-transporting polymer. Our approach enables directional self-assembling of polymer chains exhibiting large transport anisotropy and a mobility up to 6.4 cm(2) V(-1) s(-1), allowing very simple device architectures to operate at 3.3 MHz. Thus, the proposed deposition strategy is exceptionally promising for mass manufacturing of high-performance polymer circuits.