Ferromagnetism emerged from non-ferromagnetic atomic crystals.

The recently emerged ferromagnetic two-dimensional (2D) materials provide unique platforms for compact spintronic devices down to the atomic-thin regime; however, the prospect is hindered by the limited number  of ferromagnetic 2D materials discovered with limited choices of magnetic properties. If 2D antiferromagnetism could be converted to 2D ferromagnetism, the range of 2D magnets and their potential applications would be significantly broadened. Here, we discovered emergent ferromagnetism by interfacing non-magnetic WS2 layers with the antiferromagnetic FePS3. The WS2 exhibits an order of magnitude enhanced Zeeman effect with a saturated interfacial exchange field ~38 Tesla. Given the pristine FePS3 is an intralayer antiferromagnet, the prominent interfacial exchange field suggests the formation of ferromagnetic FePS3 at interface. Furthermore, the enhanced Zeeman effect in WS2 is found to exhibit a strong WS2-thickness dependence, highlighting the layer-tailorable interfacial exchange coupling in WS2-FePS3 heterostructures, which is potentially attributed to the thickness-dependent interfacial hybridization.

Transition metal dichalcogenide graded alloy monolayers by chemical vapor deposition and comparison to 2D Ising model.

In this work, a chemical vapor deposition (CVD) method was developed for the synthesis of transition metal dichalcogenide alloy monolayers, with a composition gradient in the radial direction. The composition gradient was achieved by controlling the substrate cooling rate during the CVD growth. The two types of alloys, namely, WS2(1-x)Se2x and MoS2(1-x)Se2x, were found to exhibit an opposite composition gradient. This is attributed to their different cohesive energies. A two-dimensional Ising model is used to explain the growth mechanism, where two ends of the composition were modeled as a magnetically ordered phase and a paramagnetic phase. The composition as a function of substrate temperature is then represented by the thermal magnetization curve.

Light-Induced Paramagnetism in Colloidal Ag+-Doped CdSe Nanoplatelets.

We describe a study of the magneto-optical properties of Ag+-doped CdSe colloidal nanoplatelets (NPLs) that were grown using a novel doping technique. In this work, we used magnetic circularly polarized luminescence and magnetic circular dichroism spectroscopy to study light-induced magnetism for the first time in 2D solution-processed structures doped with nominally nonmagnetic Ag+ impurities. The excitonic circular polarization (PX) and the exciton Zeeman splitting (ΔEZ) were recorded as a function of the magnetic field (B) and temperature (T). Both ΔEZ and PX have a Brillouin-function-like dependence on B and T, verifying the presence of paramagnetism in Ag+-doped CdSe NPLs. The observed light-induced magnetism is attributed to the transformation of nonmagnetic Ag+ ions into Ag2+, which have a nonzero magnetic moment. This work points to the possibility of incorporating these nanoplatelets into spintronic devices, in which light can be used to control the spin injection.

Giant valley splitting in monolayer WS2 by magnetic proximity effect.

Lifting the valley degeneracy of monolayer transition metal dichalcogenides (TMDs) would allow versatile control of the valley degree of freedom. We report a giant valley exciton splitting of 16 meV/T for monolayer WS2, using the proximity effect from an EuS substrate, which is enhanced by nearly two orders of magnitude from that obtained by an external magnetic field. More interestingly, a sign reversal of the valley splitting is observed as compared to that of WSe2 on EuS. Using first principles calculations, we investigate the complex behavior of exchange interactions between TMDs and EuS. The sign reversal is attributed to competing ferromagnetic (FM) and antiferromagnetic (AFM) exchange interactions for Eu- and S- terminated EuS surface sites. They act differently on the conduction and valence bands of WS2 compared to WSe2. Tuning the sign and magnitude of the valley exciton splitting offers opportunities for control of valley pseudospin for quantum information processing.

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field.

Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition-metal dichalcogenide (TMDC) with a broken inversion symmetry possesses two degenerate yet inequivalent valleys, which offers unique opportunities for valley control through the helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest (∼0.2 meV T-1). Here we show greatly enhanced valley spitting in monolayer WSe2, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magnetoreflectance measurements and corresponds to an effective exchange field of ∼12 T. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing the MEF of a magnetic insulator can induce magnetic order and valley and spin polarization in TMDCs, which may enable valleytronic and quantum-computing applications.

Mn(2+)-Doped CdSe/CdS Core/Multishell Colloidal Quantum Wells Enabling Tunable Carrier-Dopant Exchange Interactions.

In this work, we report the manifestations of carrier-dopant exchange interactions in colloidal Mn(2+)-doped CdSe/CdS core/multishell quantum wells. The carrier-magnetic ion exchange interaction effects are tunable through wave function engineering. In our quantum well heterostructures, manganese was incorporated by growing a Cd0.985Mn0.015S monolayer shell on undoped CdSe nanoplatelets using the colloidal atomic layer deposition technique. Unlike previously synthesized Mn(2+)-doped colloidal nanostructures, the location of the Mn ions was controlled with atomic layer precision in our heterostructures. This is realized by controlling the spatial overlap between the carrier wave functions with the manganese ions by adjusting the location, composition, and number of the CdSe, Cd1-xMnxS, and CdS layers. The photoluminescence quantum yield of our magnetic heterostructures was found to be as high as 20% at room temperature with a narrow photoluminescence bandwidth of ∼22 nm. Our colloidal quantum wells, which exhibit magneto-optical properties analogous to those of epitaxially grown quantum wells, offer new opportunities for solution-processed spin-based semiconductor devices.

Templated synthesis of ZnSe nanostructures using lyotropic liquid crystals.

We report a technique for controlled synthesis of zero-, one-, and two-dimensional compound semiconductor nanostructures by using cubic, hexagonal, and lamellar lyotropic liquid crystals as templates, respectively. The liquid crystals were formed by self-assembly in a ternary system consisting of a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) amphiphilic block copolymer as the surfactant, heptane as the non-polar dispersed phase, and formamide as the polar continuous phase. ZnSe quantum dots and nanowires with diameters smaller than 10 nm, as well as free-standing, disc-like quantum wells, were grown inside the spherical, cylindrical, and planar nanodomains, respectively, by reacting diethylzinc that was dissolved in the heptane domains with hydrogen selenide gas that was brought into contact with the liquid crystal in a sealed chamber at room temperature and atmospheric pressure. The shape and size of the resulting nanostructures can be manipulated by selecting the templating phase of the liquid crystal, the size of the dispersed nanodomains that is controlled by the composition of the template, and the concentration of diethylzinc in them.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure.

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr(2)Se(4), into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr(2)Se(4) conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Synthesis and size control of luminescent ZnSe nanocrystals by a microemulsion-gas contacting technique.

A scalable method for controlled synthesis of luminescent compound semiconductor nanocrystals (quantum dots) using microemulsion-gas contacting at room temperature is reported. The technique exploits the dispersed phase of a microemulsion to form numerous identical nanoreactors. ZnSe quantum dots were synthesized by reacting hydrogen selenide gas with diethylzinc dissolved in the heptane nanodroplets of a microemulsion formed by self-assembly of a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) amphiphilic block copolymer in formamide. A single nanocrystal is grown in each nanodroplet, thus allowing good control of particle size by manipulation of the initial diethylzinc concentration in the heptane. The ZnSe nanocrystals exhibit size-dependent luminescence and excellent photostability.