High-Figure-of-Merit X-Cut Lithium Niobate MEMS Resonators Operating Around 50 MHz for Large Passive Voltage Amplification in Radio Frequency Applications.

This article reports on the modeling, design, fabrication, and testing of high-performance X-cut lithium niobate (LN) laterally vibrating resonators (LVRs) operating around 50 MHz. The objective of this work is to exploit the high figure of merit (FoM)-product of quality factor at series resonance ( Qs ) and electromechanical coupling ( kt2 )-to provide for large passive voltage amplification in the front end of emerging radio frequency (RF) applications, i.e., wake-up radio receivers (WuRx). Finite-element analysis (FEA) is performed to optimize the devices' geometry and ensure simultaneous high Qs and kt2 . Resonators exhibiting and % are demonstrated, with FoM >1650-the highest value recorded for resonators in the megahertz range to the best of our knowledge. Finally, passive voltage gains between 35 and 57 V/V are showcased for capacitive loads ranging from 400 fF to 1 pF.

A Study on the Effects of Bottom Electrode Designs on Aluminum Nitride Contour-Mode Resonators.

This study presents the effects of bottom electrode designs on the operation of laterally vibrating aluminum nitride (AlN) contour-mode resonators (CMRs). A total of 160 CMRs were analyzed with varying bottom electrode areas at two resonant frequencies (f0) of about 230 MHz and 1.1 GHz. Specifically, we analyzed the impact of bottom electrode coverage rates on the resonator quality factor (Q) and electromechanical coupling (k2), which are important parameters for Radio Frequency (RF) and sensing applications. From our experiments, Q exhibited different trends to electrode coverage rates depending on the device resonant frequencies, while k2 increased with the coverage rate regardless of f0. Along with experimental measurements, our finite element analysis (FEA) revealed that the bottom electrode coverage rate determines the active (or vibrating) region of the resonator and, thus, directly impacts Q. Additionally, to alleviate thermoelastic damping (TED) and focus on mechanical damping effects, we analyzed the device performance at 10 K. Our findings indicated that a careful design of bottom electrodes could further improve both Q and k2 of AlN CMRs, which ultimately determines the power budget and noise level of the resonator in integrated oscillators and sensor systems.

Efficient arsenic trisulfide vertical grating coupler on lithium niobate for integrated photonic applications.

An efficient vertical grating coupler design for arsenic trisulfide (As2S3) on silicon dioxide (SiO2) on lithium niobate (LN) is proposed, fabricated, and experimentally verified. We report 4 dB coupling efficiency per grating for vertical fiber coupling at a wavelength of 1550 nm with a 3 dB bandwidth of 40 nm using an aluminum reflector mirror between the LN and SiO2 interface. This coupler is the first step towards the demonstration of high-performance integrated photonic devices, which would simultaneously benefit from the acousto-optic properties of As2S3 and electro-optic and acoustic properties of LN. This hybrid platform is deemed to impact a broad range of applications such as imaging, ranging, and inertial sensing.

A Generalized Model for Linear-Periodically-Time-Variant Circulators.

Magnetic-free non-reciprocity based on linear-periodically-time-variant (LPTV) circuits has received significant research and commercial attention since it could revolutionize wireless communications. LPTV circuits are formed by two main components: linear-time-invariant (LTI) networks and periodically-modulated switches. The modulated switches are the core elements to break the reciprocity of LTI networks. To understand and design LPTV circulators, a universal and intuitive analytical model is required. However, such model does not exist as it is extremely challenging to accurately model and fully understand the LPTV behaviour of energy storage networks. To address this limitation, this work introduces a novel analysis method, which is broadly applicable to any LPTV networks, and validates it experimentally. The novelty of this methodology comes from two main contributions: (1) modelling of the switch as a resistor in parallel with a current-controlled current source; (2) the decomposition of the LPTV network into the linear superposition of two LTI networks. We apply this technique to model the exact behaviour of an LPTV circulator in the frequency domain.

Low-loss waveguides on Y-cut thin film lithium niobate: towards acousto-optic applications.

We investigate the dependence of photonic waveguide propagation loss on the thickness of the buried oxide layer in Y-cut lithium niobate on insulator substrate to identify trade-offs between optical losses and electromechanical coupling of surface acoustic wave (SAW) devices for acousto-optic applications. Simulations show that a thicker oxide layer reduces the waveguide loss but lowers the electromechanical coupling coefficient of the SAW device. Optical racetrack resonators with different lengths were fabricated by argon plasma etching to experimentally extract waveguide losses. By increasing the oxide layer thickness from 1 µm to 2 µm, we were able to reduce propagation loss of 2 µm (1 µm) wide waveguide from 1.85 dB/cm (3 dB/cm) to as low as 0.37 dB/cm (0.77 dB/cm). Resonators with a quality factor greater than 1 million were demonstrated as well. An oxide thickness of approximately 1.5 µm is sufficient to significantly reduce propagation loss, due to leakage into the substrate and simultaneously attain good electromechanical coupling in acoustic devices. This work not only provides insights on the design and realization of low-loss photonic waveguides in lithium niobate, but also, most importantly, offers experimental evidence of how the oxide thickness directly impacts losses and guides its selection for the synthesis of high-performance acousto-optic devices in Y-cut lithium niobate on insulator.

Novel on chip rotation detection based on the acousto-optic effect in surface acoustic wave gyroscopes.

An Acousto-Optic Gyroscope (AOG) consisting of a photonic integrated device embedded into two inherently matched piezoelectric surface acoustic wave (SAW) resonators sharing the same acoustic cavity is presented. This constitutes the first demonstration of a micromachined strain-based optomechanical gyroscope that uses the effective index of the optical waveguide due to the acousto-optic effect rather than conventional displacement sensing. The theoretical analysis comparing various photonic phase sensing techniques is presented and verified experimentally for the cases based on a Mach-Zehnder interferometer, as well as a racetrack resonator. This first prototype integrates acoustic and photonic components on the same lithium niobate on insulator (LNOI) substrate and constitutes the first proof of concept demonstration of the AOG. This approach enables the development of a new class of micromachined gyroscopes that combines the advantages of both conventional microscale vibrating gyroscopes and optical gyroscopes.

Phase Noise Measurements of AlN Contour-Mode Resonators With Carrier Suppression Technique.

In this paper, the phase noise of aluminum nitride (AlN) contour-mode resonators is investigated using a passive measurement system with carrier suppression. The purpose is to make careful measurements of the performance of AlN resonators in order to better understand and clarify previously reported frequency instability in these devices. The resonant frequencies of the resonators are around 220 MHz. The motional parameters, the thermal behavior, and the nonlinear power effect of these resonators have been evaluated. Then, the principle of the noise measurement system is reviewed, and the resonator conditioning is shown. Finally, the noise measurements of the resonators are presented and discussed.

A Study on the Effects of Release Area on the Quality Factor of Contour-Mode Resonators by Laser Doppler Vibrometry.

Through the use of a laser Doppler vibrometer, it is shown that a 31% variation in quality factor can occur due to the effect of undercutting of the device layers outside of the anchors of a 220-MHz aluminum nitride contour-mode resonator. This undercutting is a result of the isotropic etch process used to release the device from the substrate. This paper shows that the variation in Q is a function of the release distance, L , between the active region of the resonator and the edge of this released region. This paper also determined a design modification that eliminated this issue and achieved a Q of 3048, which is independent of L .

Piezoelectric actuation of aluminum nitride contour mode optomechanical resonators.

We present a fully-integrated monolithic aluminum nitride optomechanical device in which lateral vibrations generated by a piezoelectric contour mode acoustic ring resonator are used to produce amplitude modulation of an optical signal in a whispering gallery mode photonic ring resonator. Acoustic and optical resonances are independently characterized in this contour mode optomechanical resonator (CMOMR). Electrically driven mechanical modes are optically detected at 35MHz, 654MHz and 884MHz.

Low phase-noise autonomous parametric oscillator based on a 226.7 MHz AlN contour-mode resonator.

We present the first parametric oscillator based on the use of a 226.7 MHz aluminum nitride contour-mode resonator. This topology enables an improvement in the phase noise of 16 dB at 1 kHz offset with respect to a conventional feedback-loop oscillator based on the same device. The recorded phase noise is -106 dBc/Hz at 1 kHz offset.

Measurements of frequency fluctuations in aluminum nitride contour-mode resonators.

As part of the current drive to engineer miniaturized monolithic high-performance microelectromechanical-enabled oscillators, there is a need for further study of frequency fluctuations in microelectromechanical resonators. To this end, we present the measurement of frequency fluctuations for 128 aluminum nitride contour-mode resonators. The measurements show that fluctuations are sufficiently large to play an important role in oscillator performance. These results were obtained for the first time from vector network analyzer measurements and are accompanied by an analysis of the experimental setup.

Aluminum nitride grating couplers.

Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated. Gratings and a waveguide micromachined on a silicon wafer with 600 nm minimum feature size were defined in a single lithography step without partial etching. Silicon dioxide (SiO(2)) was used for cladding layers. Peak coupling efficiency of -6.6 dB and a 1 dB bandwidth of 60 nm have been measured. This demonstration of wire waveguides and wideband grating couplers in a material that also has piezoelectric and elasto-optic properties will enable new functions for integrated photonics and optomechanics.

Super-high-frequency two-port AlN contour-mode resonators for RF applications.

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-microm complementary metaloxide- semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that are based on film bulk acoustic resonator (FBAR), surface acoustic wave (SAW), and CMOS on-chip inductor and capacitor (CMOS LC) technologies. A simple 2-mask process was used to fabricate the LFE AlN resonators operating between 843 MHz and 1.64 GHz with simultaneously high Q (up to 2,200) and kt 2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make these devices suitable for post-CMOS integrated on-chip direct gigahertz frequency synthesis in reconfigurable multiband wireless communications.

Design of a monolithic piezoelectrically actuated microelectromechanical tunable vertical-cavity surface-emitting laser.

We report the design of a monolithic piezoelectrically actuated microelectromechanical tunable vertical-cavity surface-emitting laser (VCSEL). The main advantages of piezoelectric actuation compared with conventional capacitive techniques are improved wavelength control, reduced external and tilt losses, and lower power supply voltages. The details of the piezoelectric actuation scheme for a 980-nm VCSEL with a variable air gap are described. A tuning range of approximately 35 nm can theoretically be achieved with a 3-V power supply (2 x reduction from that of electrostatic actuation) by use of a 250-microm-long cantilever beam. The proposed actuation mechanism is insensitive to the pull-in phenomenon, therefore improving wavelength control and reducing threshold current. Drastic improvements in power efficiency make it ideal for low-power applications such as all-optical communication, chip-scale atomic clocks, and biological studies.