The use of a Ga+ focused ion beam to modify graphene for device applications.

In this work, we clarify the features of the lateral damage of line defects in single layer graphene. The line defects were produced through well-controlled etching of graphene using a Ga(+) focused ion beam. The lateral damage length was obtained from both the integrated intensity of the disorder induced Raman D band and the minimum ion fluence. Also, the line defects were characterized by polarized Raman spectroscopy. It was found that graphene is resilient under the etching conditions since the intensity of the defect induced Raman D peak exhibits a dependence on the direction of the lines relative to the crystalline lattice and also on the direction of the laser polarization relative to the lines. In addition, electrical measurements of the modified graphene were performed. Different ion fluences were used in order to obtain a completely insulating defect line in graphene, which was determined experimentally by means of charge injection and electric force microscopy measurements. These studies demonstrate that a Ga+ ion column combined with Raman spectroscopy is a powerful technique to produce and understand well-defined periodic arrays of defects in graphene, opening possibilities for better control of nanocarbon devices.

Thermal enhancement of chemical doping in graphene: a Raman spectroscopy study.

The Raman spectrum of monolayer graphene deposited on the top of a silicon oxide/silicon substrate was investigated as a function of temperature up to 515 K. An anomalous temperature dependence of the Raman features was observed, including an important frequency upshift for the Raman G band at room temperature, after the heating process. On the other hand, the frequency of the Raman G(') band is only slightly affected by the thermal treatment. We discuss our experimental results in terms of doping and strain effects associated with the interaction of graphene with the substrate and with the presence of water in the sample. We conclude that the doping effect gives the most important contribution to the spectral changes observed after the thermal cycle.

Quantum dot dipole orientation and excitation efficiency of micropillar modes.

The relative intensity of photonic modes in microcavity pillars with embedded self-assembled quantum dots is shown to be a sensitive function of quantum dot dipole orientation and position. This is deduced from a comparison of experiment and calculated intensities of light emission for many nominally identical pillars. We are able to obtain the overall degree of in-plane polarization of the quantum dot ensemble and also to obtain information on the degree of polarization along the growth axis.

Nanowires and nanoribbons formed by methylphosphonic acid.

The production and physical properties of nanowires and nanoribbons formed by methylphosphonic acid (MPA)--CH3PO(OH)2--were investigated. These structures are formed on an aluminum coated substrate when immersed in an ethanolic solution of MPA for several days. A careful investigation of the growth conditions resulted in a narrow window of solution concentrations and temperatures for the successful development of nanowires and nanoribbons. Several different techniques were employed to characterize these nanostructures: (1) Photoluminescence experiments showed a strong emission at 2.3 eV (green), which is visible to the naked eye; (2) X-ray diffraction experiments indicated a significant cristalinity, in agreement with atomic force microscopy (AFM) and transmission electron microscopy (TEM) morphology images, which show organized nano-scale wires and ribbons, (furthermore, AFM-Phase and TEM images also suggest that nanoribbons are formed by well-aligned nanowires); (3) Conductive-AFM experiments revealed an intermediary conductivity for these structures (10(-1)/Ohm x m), which is similar to some intrinsic semiconductors and; (4) finally, Infrared, Raman, and X-Ray Photoelectron Spectroscopies produced information about the contents, structure, and composition of both wires and ribbons.

Phonon-assisted excitonic recombination channels observed in DNA-wrapped carbon nanotubes using photoluminescence spectroscopy.

By using a sample of DNA-wrapped single-wall carbon nanotubes strongly enriched in the (6,5) nanotube, photoluminescence emissions observed at special excitation energy values were identified with specific mechanisms of phonon-assisted excitonic absorption and recombination processes associated with (6,5) nanotubes, including one-phonon, two-phonon, and some continuous-luminescence processes. Such detailed processes are not separately identified in three-dimensional semiconducting materials. A general theoretical framework is presented to interpret the experimentally observed phonon-assisted processes in terms of excitonic states.