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Appl Radiat Isot ; 137: 184-189, 2018 Jul.
Artigo em Inglês | MEDLINE | ID: mdl-29655122

RESUMO

A verification of the Monte Carlo simulation software for the prediction of short circuit current value is carried out using the Ni-63 source with the activity of 2.7 mCi/cm2 and converters based on Si p-i-n diodes and SiC and GaN Schottky diodes. A comparison of experimentally measured and calculated short circuit current values confirms the validity of the proposed modeling method, with the difference in the measured and calculated short circuit current values not exceeding 25% and the error in the predicted output power values being below 30%. Effects of the protective layer formed on the Ni-63 radioactive film and of the passivating film on the semiconductor converters on the energy deposited inside the converters are estimated. The maximum attainable betavoltaic cell parameters are estimated.

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