Retroperitoneal Paraganglioma Treated With Tumor Resection and Replacement of the Inferior Vena Cava.

Retroperitoneal paragangliomas are tumors of neuroectodermal origin rarely appearing in the pediatric population. We report a case of a large paraganglioma infiltrating the right kidney and inferior vena cava in a 16-year-old boy who initially presented with a right-sided varicocele. Right retroperitoneal paraganglioma was embolized preoperatively, followed by total tumor excision, right nephrectomy, inferior vena cava resection, and reconstruction using a prosthetic vascular graft. Retroperitoneal tumors requiring surgery can successfully be treated by radical resection and replacement of the inferior vena cava in experienced centers.

Optimum Contact Configurations for Quasi-One-Dimensional Phosphorene Nanodevices.

We employ atomistic quantum transport simulations based on non-equilibrium Green's function (NEGF) formalism of quasi-one-dimensional (quasi-1D) phosphorene, or phosphorene nanoribbons (PNRs), to explore routes towards minimizing contact resistance (RC) in devices based on such nanostructures. The impact of PNR width scaling from ~5.5 nm down to ~0.5 nm, different hybrid edge-and-top metal contact configurations, and various metal-channel interaction strengths on the transfer length and RC is studied in detail. We demonstrate that optimum metals and top-contact lengths exist and depend on PNR width, which is a consequence of resonant transport and broadening effects. We find that moderately interacting metals and nearly edge contacts are optimum only for wider PNRs and phosphorene, providing a minimum RC of ~280 Ωµm. Surprisingly, ultra-narrow PNRs benefit from weakly interacting metals combined with long top contacts that lead to an added RC of only ~2 Ωµm in the 0.49 nm wide quasi-1D phosphorene nanodevice.

Lower Limits of Contact Resistance in Phosphorene Nanodevices with Edge Contacts.

Edge contacts are promising for improving carrier injection and contact resistance in devices based on two-dimensional (2D) materials, among which monolayer black phosphorus (BP), or phosphorene, is especially attractive for device applications. Cutting BP into phosphorene nanoribbons (PNRs) widens the design space for BP devices and enables high-density device integration. However, little is known about contact resistance (RC) in PNRs with edge contacts, although RC is the main performance limiter for 2D material devices. Atomistic quantum transport simulations are employed to explore the impact of attaching metal edge contacts (MECs) on the electronic and transport properties and contact resistance of PNRs. We demonstrate that PNR length downscaling increases RC to 192 Ω µm in 5.2 nm-long PNRs due to strong metallization effects, while width downscaling decreases the RC to 19 Ω µm in 0.5 nm-wide PNRs. These findings illustrate the limitations on PNR downscaling and reveal opportunities in the minimization of RC by device sizing. Moreover, we prove the existence of optimum metals for edge contacts in terms of minimum metallization effects that further decrease RC by ~30%, resulting in lower intrinsic quantum limits to RC of ~90 Ω µm in phosphorene and ~14 Ω µm in ultra-narrow PNRs.

Correction: Poljak, M.; Matic, M. Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts. Materials 2021, 14, 3670.

The authors regret that the results presented in Figure 3c,d and Figure 6c,d in our published paper [...].

Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts.

Graphene has attracted a lot of interest as a potential replacement for silicon in future integrated circuits due to its remarkable electronic and transport properties. In order to meet technology requirements for an acceptable bandgap, graphene needs to be patterned into graphene nanoribbons (GNRs), while one-dimensional (1D) edge metal contacts (MCs) are needed to allow for the encapsulation and preservation of the transport properties. While the properties of GNRs with ideal contacts have been studied extensively, little is known about the electronic and transport properties of GNRs with 1D edge MCs, including contact resistance (RC), which is one of the key device parameters. In this work, we employ atomistic quantum transport simulations of GNRs with MCs modeled with the wide-band limit (WBL) approach to explore their metallization effects and contact resistance. By studying density of states (DOS), transmission and conductance, we find that metallization decreases transmission and conductance, and either enlarges or diminishes the transport gap depending on GNR dimensions. We calculate the intrinsic quantum limit of width-normalized RC and find that the limit depends on GNR dimensions, decreasing with width downscaling to ~21 Ω∙µm in 0.4 nm-wide GNRs, and increasing with length downscaling up to ~196 Ω∙µm in 5 nm-long GNRs. We demonstrate that 1D edge contacts and size engineering can be used to tune the RC in GNRs to values lower than those of graphene.

Regulation of KRAS protein expression by miR-544a and KRAS-LCS6 polymorphism in wild-type KRAS sporadic colon adenocarcinoma.

Colorectal carcinoma (CRC) results from the accumulation of genetic mutations and alterations in signaling pathways. KRAS is mutated in 40% of CRC cases and is involved in increased tumor cells proliferation and survival. Although KRAS mutations are a dominant event in CRC tumorigenesis, increased wild-type KRAS expression has a similar effect on accelerated tumor growth. In this study, we investigated the KRAS status in correlation with clinicopathological features in sporadic CRC and more importantly the role of let-7a-5p and miR-544a-3p in the regulation of wild-type KRAS protein expression in the tumor center (T1) and invasive tumor front (T2). Analysis showed that 39.1% of tumor samples had KRAS mutations. In wild-type KRAS tumors, 62.0% were positive for KRAS protein expression and there was a higher percentage of KRAS-positive tumor cells and a higher intensity of immunohistochemical reaction in T2 than in T1 samples. This could not be attributed to differences in KRAS mRNA levels, suggesting regulation via miR-544a-3p expression which was significantly decreased in T2 samples. Furthermore, we demonstrated that tumor samples carrying the KRAS-LCS6 variant allele had significantly higher protein expression of the wild-type KRAS. Our results suggest the role of the KRAS-LCS6 polymorphism and miR-544a-3p expression in the regulation of wild-type KRAS protein expression in sporadic CRC.

Epidermal growth factor receptor intron 1 polymorphism and microsatellite instability in sporadic colorectal cancer.

Epidermal growth factor receptor (EGFR) expression is commonly upregulated in sporadic colorectal cancer (CRC) and its high expression is associated with poor prognosis in patients with CRC. CA-SSR1 is a dinucleotide CA repeat of the EGFR gene that can modulate EGFR transcription and is a potential target of the mismatch repair machinery in tumours with microsatellite instability (MSI). In the present study, 160 sporadic colon cancer samples were analysed for EGFR CA-SSR1 polymorphism and MSI status. Additionally, EGFR mRNA and protein expression levels in the tumour centre and in the invasive tumour front, compared with those in adjacent normal tissue samples, were evaluated in 80 tumour samples. An inverse association was identified between EGFR mRNA levels and the sum of repeats in both alleles of the CA-SSR1 polymorphism in normal tissues. Changes in CA-SSR1 were detected in the tumour centre as well as in the invasive tumour front and metastases in all MSI high (MSI-H) tumours. Analysis of EGFR expression at the mRNA and protein levels according to MSI status revealed lower EGFR mRNA and protein expression in MSI-H tumours than microsatellite-stable (MSS) tumours. Furthermore, higher EGFR levels in the invasive tumour front compared with in the tumour centre in MSS tumours were identified, suggesting a role of EGFR in tumour progression and higher invasive potential of MSS than MSI-H tumours.

Bandstructure and Size-Scaling Effects in the Performance of Monolayer Black Phosphorus Nanodevices.

Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. Material and device properties are obtained by non-equilibrium Green's function (NEGF) formalism combined with a novel tight-binding (TB) model fitted on ab initio density-functional theory (DFT) calculations. We report significant changes in the dispersion, number, and configuration of electronic subbands, density of states, and transmission of PNRs with nanoribbon width (W) downscaling. In addition, the performance of PNR FETs with 15 nm-long channels are self-consistently assessed by exploring the behavior of charge density, quantum capacitance, and average charge velocity in the channel. The dominant consequence of W downscaling is the decrease of charge velocity, which in turn deteriorates the ON-state current in PNR FETs with narrower nanoribbon channels. Nevertheless, we find optimum nanodevices with W > 1.4 nm that meet the requirements set by the semiconductor industry for the "3 nm" technology generation, which illustrates the importance of properly accounting bandstructure effects that occur in sub-5 nm-wide PNRs.