Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals.

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

Grid-plainification enables medium-temperature PbSe thermoelectrics to cool better than Bi2Te3.

Thermoelectric cooling technology has important applications for processes such as precise temperature control in intelligent electronics. The bismuth telluride (Bi2Te3)-based coolers currently in use are limited by the scarcity of Te and less-than-ideal cooling capability. We demonstrate how removing lattice vacancies through a grid-design strategy switched PbSe from being useful as a medium-temperature power generator to a thermoelectric cooler. At room temperature, the seven-pair device based on n-type PbSe and p-type SnSe produced a maximum cooling temperature difference of ~73 kelvin, with a single-leg power generation efficiency approaching 11.2%. We attribute our results to a power factor of >52 microwatts per centimeter per square kelvin, which was achieved by boosting carrier mobility. Our demonstration suggests a path for commercial applications of thermoelectric cooling based on Earth-abundant Te-free selenide-based compounds.

All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe.

The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of ∼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of ∼0.2 W and a conversion efficiency of ∼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.

Lattice plainification advances highly effective SnSe crystalline thermoelectrics.

Thermoelectric technology has been widely used for key areas, including waste-heat recovery and solid-state cooling. We discovered tin selenide (SnSe) crystals with potential power generation and Peltier cooling performance. The extensive off-stoichiometric defects have a larger impact on the transport properties of SnSe, which motivated us to develop a lattice plainification strategy for defects engineering. We demonstrated that Cu can fill Sn vacancies to weaken defects scattering and boost carrier mobility, facilitating a power factor exceeding ~100 microwatts per centimeter per square kelvin and a dimensionless figure of merit (ZT) of ~1.5 at 300 kelvin, with an average ZT of ~2.2 at 300 to 773 kelvin. We further realized a single-leg efficiency of ~12.2% under a temperature difference (ΔT) of ~300 kelvin and a seven-pair Peltier cooling ΔTmax of ~61.2 kelvin at ambient temperature. Our observations are important for practical applications of SnSe crystals in power generation as well as electronic cooling.

High thermoelectric efficiency realized in SnSe crystals via structural modulation.

Crystalline thermoelectrics have been developed to be potential candidates for power generation and electronic cooling, among which SnSe crystals are becoming the most representative. Herein, we realize high-performance SnSe crystals with promising efficiency through a structural modulation strategy. By alloying strontium at Sn sites, we modify the crystal structure and facilitate the multiband synglisis in p-type SnSe, favoring the optimization of interactive parameters µ and m*. Resultantly, we obtain a significantly enhanced PF ~85 µW cm-1 K-2, with an ultrahigh ZT ~1.4 at 300 K and ZTave ~2.0 among 300-673 K. Moreover, the excellent properties lead to single-leg device efficiency of ~8.9% under a temperature difference ΔT ~300 K, showing superiority among the current low- to mid-temperature thermoelectrics, with an enhanced cooling ΔTmax of ~50.4 K in the 7-pair thermoelectric device. Our study further advances p-type SnSe crystals for practical waste heat recovery and electronic cooling.

Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of n-Type PbTe.

High carrier mobility is critical to improving thermoelectric performance over a broad temperature range. However, traditional doping inevitably deteriorates carrier mobility. Herein, we develop a strategy for fine tuning of defects to improve carrier mobility. To begin, n-type PbTe is created by compensating for the intrinsic Pb vacancy in bare PbTe. Excess Pb2+ reduces vacancy scattering, resulting in a high carrier mobility of ∼3400 cm2 V-1 s-1. Then, excess Ag is introduced to compensate for the remaining intrinsic Pb vacancies. We find that excess Ag exhibits a dynamic doping process with increasing temperatures, increasing both the carrier concentration and carrier mobility throughout a wide temperature range; specifically, an ultrahigh carrier mobility ∼7300 cm2 V-1 s-1 is obtained for Pb1.01Te + 0.002Ag at 300 K. Moreover, the dynamic doping-induced high carrier concentration suppresses the bipolar thermal conductivity at high temperatures. The final step is using iodine to optimize the carrier concentration to ∼1019 cm-3. Ultimately, a maximum ZT value of ∼1.5 and a large average ZT ave value of ∼1.0 at 300-773 K are obtained for Pb1.01Te0.998I0.002 + 0.002Ag. These findings demonstrate that fine tuning of defects with <0.5% impurities can remarkably enhance carrier mobility and improve thermoelectric performance.

Moving fast makes for better cooling.

Optimizing carrier mobility with composition and processing is key for thermoelectric coolers.

Realizing high-ranged thermoelectric performance in PbSnS2 crystals.

Great progress has been achieved in p-type SnS thermoelectric compound recently, while the stagnation of the n-type counterpart hinders the construction of thermoelectric devices. Herein, n-type sulfide PbSnS2 with isostructural to SnS is obtained through Pb alloying and achieves a maximum ZT of ~1.2 and an average ZT of ~0.75 within 300-773 K, which originates from enhanced power factor and intrinsically ultralow thermal conductivity. Combining the optimized carrier concentration by Cl doping and enlarged Seebeck coefficient through activating multiple conduction bands evolutions with temperature, favorable power factors are maintained. Besides, the electron doping stabilizes the phase of PbSnS2 and the complex-crystal-structure induced strong anharmonicity results in ultralow lattice thermal conductivity. Moreover, a maximum power generation efficiency of ~2.7% can be acquired in a single-leg device. Our study develops a n-type sulfide PbSnS2 with high performance, which is a potential candidate to match the excellent p-type SnS.

Realization of unpinned two-dimensional dirac states in antimony atomic layers.

Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at [Formula: see text] in topological insulators Bi2Se(Te)3 and Dirac cones at K and [Formula: see text] points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene.

Multiple valence bands convergence and strong phonon scattering lead to high thermoelectric performance in p-type PbSe.

Thermoelectric generators enable the conversion of waste heat to electricity, which is an effective way to alleviate the global energy crisis. However, the inefficiency of thermoelectric materials is the main obstacle for realizing their widespread applications and thus developing materials with high thermoelectric performance is urgent. Here we show that multiple valence bands and strong phonon scattering can be realized simultaneously in p-type PbSe through the incorporation of AgInSe2. The multiple valleys enable large weighted mobility, indicating enhanced electrical properties. Abundant nano-scale precipitates and dislocations result in strong phonon scattering and thus ultralow lattice thermal conductivity. Consequently, we achieve an exceptional ZT of ~ 1.9 at 873 K in p-type PbSe. This work demonstrates that a combination of band manipulation and microstructure engineering can be realized by tuning the composition, which is expected to be a general strategy for improving the thermoelectric performance in bulk materials.

High thermoelectric performance realized through manipulating layered phonon-electron decoupling.

Thermoelectric materials allow for direct conversion between heat and electricity, offering the potential for power generation. The average dimensionless figure of merit ZTave determines device efficiency. N-type tin selenide crystals exhibit outstanding three-dimensional charge and two-dimensional phonon transport along the out-of-plane direction, contributing to a high maximum figure of merit Zmax of ~3.6 × 10-3 per kelvin but a moderate ZTave of ~1.1. We found an attractive high Zmax of ~4.1 × 10-3 per kelvin at 748 kelvin and a ZTave of ~1.7 at 300 to 773 kelvin in chlorine-doped and lead-alloyed tin selenide crystals by phonon-electron decoupling. The chlorine-induced low deformation potential improved the carrier mobility. The lead-induced mass and strain fluctuations reduced the lattice thermal conductivity. Phonon-electron decoupling plays a critical role to achieve high-performance thermoelectrics.

Power generation and thermoelectric cooling enabled by momentum and energy multiband alignments.

Thermoelectric materials transfer heat and electrical energy, hence they are useful for power generation or cooling applications. Many of these materials have narrow bandgaps, especially for cooling applications. We developed SnSe crystals with a wide bandgap (E g ≈ 33 k B T) with attractive thermoelectric properties through Pb alloying. The momentum and energy multiband alignments promoted by Pb alloying resulted in an ultrahigh power factor of ~75 µW cm-1 K-2 at 300 K, and an average figure of merit ZT of ~1.90. We found that a 31-pair thermoelectric device can produce a power generation efficiency of ~4.4% and a cooling ΔT max of ~45.7 K. These results demonstrate that wide-bandgap compounds can be used for thermoelectric cooling applications.

Ultrahigh Average ZT Realized in p-Type SnSe Crystalline Thermoelectrics through Producing Extrinsic Vacancies.

Crystalline SnSe has been revealed as an efficient thermoelectric candidate with outstanding performance. Herein, record-high thermoelectric performance is achieved among SnSe crystals via simply introducing a small amount of SnSe2 as a kind of extrinsic defect dopant. This excellent performance mainly arises from the largely enhanced power factor by increasing the carrier concentration high as 6.55 × 1019 cm-3, which was surprisingly promoted by introducing extrinsic SnSe2 even though pristine SnSe2 is an n-type conductor. The optimized carrier concentration promotes a deeper Fermi level and activates more valence bands, leading to an extraordinary room-temperature power factor ∼54 µW cm-1 K-2 through enlarging the band effective mass and Seebeck coefficient. As a result, on the basis of simultaneously depressed thermal conductivity induced from both Sn vacancies and SnSe2 microdomains, maximum ZT values ∼0.9-2.2 and excellent average ZT > 1.7 among the working temperature range are achieved in Na doped SnSe crystals with 2% extrinsic SnSe2. Our investigation illustrates new approaches on improving thermoelectric performance through introducing defect dopants, which might be well-implemented in other thermoelectric systems.

Realizing High Thermoelectric Performance in p-Type SnSe through Crystal Structure Modification.

The simple binary compound SnSe has been reported as a robust thermoelectric material for energy conversion by showing strong anharmonicity and multiple electronic valence bands. Herein, we report a record-high average ZT value of ∼1.6 at 300-793 K with maximum ZT values ranging from 0.8 at 300 K to 2.1 at 793 K in p-type SnSe crystals. This remarkable thermoelectric performance arises from the enhanced power factor and lowered lattice thermal conductivity through crystal structure modification via Te alloying. Our results elucidate that Te alloying increases the carrier mobility by making the bond lengths more nearly equal and sharpening the valence bands; meanwhile, the Seebeck coefficient remains large due to multiple valence bands. As a result, a record-high power factor of ∼55 µW cm-1 K-2 at 300 K is achieved. Additionally, Te alloying promotes Sn atom displacements, thus leading to a lower lattice thermal conductivity. Our conclusions are well supported by electron localization function calculations, the Callaway model, and structural characterization via aberration-corrected scanning transmission electron microscopy. Our approach of modifying crystal structures could also be applied in other low-symmetry thermoelectric materials and represents a new strategy to enhance thermoelectric performance.

Approaching Topological Insulating States Leads to High Thermoelectric Performance in n-Type PbTe.

Realizing high thermoelectric performance requires high electrical transport properties and low thermal conductivity, which are essentially determined by balancing the interdependent controversy of carrier mobility, effective mass, and lattice thermal conductivity. Here, we observed an electronic band inversion (approaching topological insulating states) in Sn and Se co-alloyed PbTe, resulting in optimizing effective mass and carrier mobility. The Sn alloying in PbTe(Se) can narrow its band gap due to band inversion and induce a sharper conduction band (equals to lower carrier mass), which further facilitates high carrier mobility, ∼251 cm2 V-1 s-1 in Pb0.89Sn0.11Te0.89Se0.11 at room temperature, thus leading to a high power factor. Meanwhile, we found that the lattice thermal conductivity κl can be reduced from ∼0.77 Wm-1 K-1 in PbTe to ∼0.45 Wm-1 K-1 in (Pb0.91Sn0.09)(Te0.91Se0.09) by producing point defects via Sn and Se co-alloying. Coupling reducing lattice thermal conductivity with integration of optimizing effective mass and carrier mobility by  means of electronic band inversion, we obtained a maximum ZT value ∼1.4 at 773 K in n-type (Pb0.93Sn0.07)(Te0.93Se0.07).