Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications.

This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was possible to stablish the formation of GaSb, Mn3Ga, and Mn2Sb2 phases. FTIR measurements present an optical interference associated with periodicity and the homogenous thickness of the layers. HR-SEM shows the multilayer architecture with columnar microstructure in the formation of layers with grain nucleation on the surface. A ferromagnetic-like behavior was observed in the multilayers at room temperature related to the domains and interlayers interaction. Additionally, the hysteresis curves present shifts attributed to the effect of exchange bias coupling. I-V curves show RESET-SET states of the multilayer system with bipolar resistive behavior, which can be modified by external magnetic fields. The resistive switching evidenced corresponds to the conductive mechanism based on the capacitive conductance and the formation of conductive filaments in multilayer structure.

Ferromagnetic-like behavior of Co doped TiO2 flexible thin films fabricated via co-sputtering for spintronic applications.

TiO2:Co thin films on ITO (Indium-tin-oxide)/PET (Poly Ethylene Terephthalate) flexible and glass substrates were fabricated via DC magnetron co-sputtering at room temperature. The samples deposited on glass substrates were subjected to annealing processes at 473 K for 2 h to improve the crystallization of the material. Both TiO2:Co/ITO/PET and TiO2:Co/glass thin films exhibited excellent optical properties with more than 80% transmission in the visible region. An increase on ITO/PET surface temperature was detected during the synthesis of the samples; this variation in the ITO substrate ( ∼ 2 K) was associated to impact energetic of ion or atoms bombarded during the deposition process. X-ray diffraction measurements evidenced local phases to growth on the flexible substrate; the random distributions of Cobalt crystals into the rutile and anatase phases were associated to a crystalline lattice embedded with magnetic ions. A configuration of small grains and absence of cluster formation on the surface of thin films was observed through SEM and AFM measurements. From this topographic study and MFM measurements evidenced that surface grains were not constituted magnetic domains formation in the thin films. The ferromagnetic-like behavior was observed in a magnetization as function of field measurement by PPMS. M vs H curves at room temperature for TiO2:Co/ITO/PET thin films, showed the hysteresis loop. The dipolar interaction between Cobalt ions without formation of domains were correlated to the magnetic behavior in the material, as the doping concentration is lower than 12%.

Optical Properties of Greta oto Butterfly Wings: Relation of Iridescence with Photonic Properties.

This work presents an experimental and theoretical study about the optical properties of the wings of butterfly Greta oto. UV-Vis spectroscopy was used to obtain the optical response of the sample as function of the incident light angle. It was possible to observe a shift in the maximum of the reflectance spectra towards lower values of lambda when the angle of incident light increases. The theoretical modeling allows us to relate photonic behavior with the optical properties of the wings of butterfly Greta oto. In particular, photonic behavior could be associated with the iridescent phenomenon on the butterfly wings.

Estructura cristalina del compuesto Cu2ZnSnSe4 depositado por co-evaporación: análisis comparativo estannita-kesterita / Crystal structure of Cu2ZnSnSe4 deposited by co-evaporation: A Stannite-kesterite comparative analysis / Estructura cristalina do composto Cu2ZnSnSe4 depositado por co-evaporação: análise comparativa estannita-kesterita

Se fabricaron películas del compuesto cuaternario Cu2ZnSnSe4 por el método de co-evaporación de los precursores cobre, estaño y seleniuro de zinc en presencia de una atmosfera de selenio. Las muestras fueron depositadas sobre sustratos de vidrio tipo soda lime. A partir de las medidas de difracción de rayos X se estableció, que la fase que caracteriza el compuesto es sensible a cambios en los parámetros de síntesis afectando la estructura del material. Se detallaron propiedades estructurales como distancia interplanar, planos cristalinos, tamaños del cristalito y posiciones atómicas de los elementos del compuesto; a través de la comparación de las estructuras estannita y kesterita asociadas al crecimiento del Cu2ZnSnSe4. El análisis comparativo entre las estructuras, permitió determinar la tipo estannita como la que cristaliza el material. Usando el método Rietveld y programas de cómputo se logró simular la estructura estannita obtenida; evidenciando diferencias sutiles con la estructura kesterita.

We fabricated quaternary compound, Cu2ZnSnSe4, films by co-evaporation of copper, tin and zinc selenide precursors in a selenium atmosphere and deposited the samples on soda-lime glass substrates. From the x-ray diffraction data, we established that the phase that characterizes the compound is sensitive to changes in the synthesis parameters and affects the structure of the material. Through a comparison of stannite and kesterite structures associated with Cu2ZnSnSe4 growth, we detailed structural properties such as interplanar distance, crystal planes, crystallite size and the atomic position of the elements of the compound. A comparative analysis of the structures revealed that the stannite is the crystallizing material. Using the Rietveld method and software we were able to simulate the stannite structure establishing subtle differences with the kesterite structure.

Fabricaram-se filmes do composto Cu2ZnSnSe4 pelo método de co-evaporação dos percursores cobre, estanho e seleneto de zinco na presença de uma atmosfera de selênio. As amostras foram depositadas sobre substratos de vidro tipo soda lime. A partir das medidas de difração de raios X se estabeleceu que a fase que caracteriza o composto é sensível a alterações nos parâmetros de síntese afetando a estrutura do material. Detalharam-se propriedades estruturais como distancia interplanar, planos cristalinos, tamanhos do cristalito e posições atómicas dos elementos do composto; através da comparação das estruturas estannita e kesterita associadas ao crescimento do Cu2ZnSnSe4. A análise comparativa entre as estruturas, permitiu determinar o tipo Estannita como a que cristaliza o material. Utilizando o método Rietveld e programas de computação conseguiu-se simular a estrutura estannita obtida; mostrando diferenças subtis com a estrutura kesterita.