Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching.

Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOx films as a function of film composition and temperature. The thermal conductivity is shown to vary between 0.86 and 1.25 W·m-1·K-1 over the composition (x = 1.9 to 2.5) and temperature (293 to 453 K) ranges examined, and to increase with temperature for all compositions. The impact of these thermal conductivity variations on the quasistatic current-voltage (I-V) characteristics and oscillator dynamics of MOM devices is then investigated using a lumped-element circuit model. Understanding such effects is essential for engineering functional devices for nonvolatile memory and brain-inspired computing applications.

Electric Field- and Current-Induced Electroforming Modes in NbOx.

Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbOx/Pt devices, and correlate these with current-voltage characteristics and in situ thermoreflectance measurements to identify distinct modes of electroforming in low- and high-conductivity NbOx films. In low-conductivity films, the filaments are randomly distributed within the oxide film, consistent with a field-induced weakest-link mechanism, while in high-conductivity films they are concentrated in the center of the film. In the latter case, the current-voltage characteristics and in situ thermoreflectance imaging show that electroforming is associated with current bifurcation into regions of low and high current density. This is supported by finite element modeling of the current distribution and shown to be consistent with predictions of a simple core-shell model of the current distribution. These results clearly demonstrate two distinct modes of electroforming in the same material system and show that the dominant mode depends on the conductivity of the film, with field-induced electroforming dominant in low-conductivity films and current bifurcation-induced electroforming dominant in high-conductivity films.

Characterization of Temperature Rise in Alternating Current Electrothermal Flow Using Thermoreflectance Method.

Alternating current electrothermal flow (ACET) induced by Joule heating is utilized to transport biologically relevant liquids in microchannels using simple electrode designs. However, Joule heating may cause significant temperature rises, which can degrade biological species, and hence, ACET may become impractical for biomicrofluidic sensors and other possible applications. In this study, the temperature rise at the electrode/electrolyte interface during ACET flow is measured using a high-resolution, noninvasive, thermoreflectance imaging method, which is generally utilized in microelectronics thermal imaging applications. The experimental findings reveal that Joule heating could result in an excessive temperature rise, exceeding 50 °C at higher voltage levels (20 Vpp). The measured data are compared with the results of the enhanced ACET theoretical model, which predicts the temperature rise accurately, even at high levels of applied voltages. Overall, our study provides a temperature measurement technique that is used for the first time for electrode/electrolyte systems. The reported results are critical in designing biomicrofluidic systems with significant energy dissipation in conductive fluids.