A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles.

In this work we study how the multi-element nature of light emitting diodes (LEDs) based on nanowire (NW) ensembles influences their current voltage (I-V) characteristics. We systematically address critical issues of the fabrication process that can result in significant fluctuations of the electrical properties among the individual NWs in such LEDs, paying particular attention to the planarization step. Electroluminescence (EL) maps acquired for two nominally identical NW-LEDs reveal that small processing variations can result in a large difference in the number of individual nano-devices emitting EL. The lower number of EL spots in one of the LEDs is caused by its inhomogeneous electrical properties. The I-V characteristics of this LED cannot be described well by the classical Shockley model. We are able to take into account the multi-element nature of such LEDs and fit the I-V characteristics in the forward bias regime by employing an ad hoc adjusted version of the Shockley equation. More specifically, we introduce a bias dependence of the ideality factor. The basic considerations of our model should remain valid also for other types of devices based on ensembles of interconnected p-n junctions with inhomogeneous electrical properties, regardless of the employed material system.

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires (NWs) on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN NW ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN NWs at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles.

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.

InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30° compared to the GaAs base islands underneath. Synchrotron X-ray diffraction experiments revealed that the InAs segments are grown relaxed on top of GaAs, with a predominantly zincblende crystal structure and stacking faults.

High-frequency acoustic charge transport in GaAs nanowires.

The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor.

Nuclear spin hyperpolarization is essential to future solid-state quantum computation using nuclear spin qubits and in highly sensitive magnetic resonance imaging. Though efficient dynamic nuclear polarization in semiconductors has been demonstrated at low temperatures for decades, its realization at room temperature is largely lacking. Here we demonstrate that a combined effect of efficient spin-dependent recombination and hyperfine coupling can facilitate strong dynamic nuclear polarization of a defect atom in a semiconductor at room temperature. We provide direct evidence that a sizeable nuclear field (~150 Gauss) and nuclear spin polarization (~15%) sensed by conduction electrons in GaNAs originates from dynamic nuclear polarization of a Ga interstitial defect. We further show that the dynamic nuclear polarization process is remarkably fast and is completed in <5 µs at room temperature. The proposed new concept could pave a way to overcome a major obstacle in achieving strong dynamic nuclear polarization at room temperature, desirable for practical device applications.

Current path in light emitting diodes based on nanowire ensembles.

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased µ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

GaN nanowire ensembles with axial In(x)Ga(1-x)N multi-quantum-wells (MQWs) were grown by molecular beam epitaxy. In a series of samples we varied the In content in the MQWs from almost zero to around 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range of 2.2 to 2.5 eV, depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.

Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates.

The growth of Sb nanowires on GaSb(111)A substrates is studied by in situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the [Formula: see text] and the GaSb crystal along [Formula: see text] directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.

Acoustically driven photon antibunching in nanowires.

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at gigahertz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of antibunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures.

The reversal processes of magnetization in epitaxial MnAs nanotubes prepared by an overgrowth on the sidewall of GaAs nanowires having a diameter of 26 nm are investigated. While the magnetic hard axis is aligned in the direction of the nanowire axis, we apply an external magnetic field perpendicular to the axis to examine the flipping characteristics of magnetic moments. We determine the contributions from the substrate by a direct measurement in order to extract the magnetization of the core-shell heterostructures. The abrupt change in the thus-obtained magnetization due to a flip when the field is varied exhibits an overshoot at about 0.4 kOe for samples with a thickness of the ferromagnetic shell (40-50 nm) larger than the diameter of the core. Moreover, the peak value exceeds the value when the field is swept in the opposite direction. The magnetic hysteresis loop consequently involves line crossings. We speculate that the spin textures of domain walls in such thick hollow cylinders and their movement at the magnetization flip are affected by the geometry and magnetostatic interactions of various origins, giving rise to the anomalous behaviour.

In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires.

Strain relaxation mechanisms occurring during self-induced growth of nitride nanowires are investigated by in situ reflection high-energy electron diffraction and ex situ high-resolution transmission electron microscopy. Epitaxial GaN nanowires nucleate on an AlN buffer layer under highly nitrogen-rich conditions via the initial formation of coherently strained three-dimensional islands according to the Volmer-Weber growth mechanism. The epitaxial strain relief in these islands occurs by two different processes. Initially, strain is elastically relieved via several shape transitions. Subsequently, plastic relaxation takes place through the formation of a misfit dislocation at the GaN/AlN interface. At the same time, a final shape transition to fully relaxed nanowires occurs.

Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kinetics.

We analyze the atomistic mechanisms driving the compositional correlation of In and N in the quaternary Inx Ga1-xAs1-yNy alloys combining atomic scale chemical analysis in transmission electron microscopy and density-functional theory calculations. Our results show that for typical growth conditions surface kinetics prevail over bulk thermodynamics resulting in a hitherto unexpected compositional anticorrelation between In and N.

Pump geometry for resonant and quasi-resonant optical excitation of microcavity lasers.

A simple new pump geometry for optical excitation of microcavities and vertical-cavity surface-emitting lasers is presented. The technique circumvents the high reflectivity of the cavity stop band by excitation through the substrate at a large angle of incidence. Under these conditions, the reflectivity of the bottom Bragg reflector is small, and optical pumping at any desired photon energy becomes possible. Experimental results for optical excitation with this new geometry are compared with resonant optical pumping through the cavity mode.

[Prognosis for patients of an intensive care unit. Myocardial infarct, pulmonary edema, reanimation and severe infections]. / Prognose von Patienten einer Intensivstation. Myokardinfarkt, Lungenödem, Reanimation und bedrohliche Infektionen.

The prognosis of patients should influence diagnostic and therapeutic measurements. For this reason the survival time is shown of 516 patients with acute myocardial infarction, 200 patients with pulmonary edema, 553 patients in which resuscitation had become necessary and 201 with life-threatening infections. The survival time is correlated to clinical signs easily obtainable on admission. Small groups can be selected which with a high degree of probability will die during their stay in hospital. Intensive therapy should be withheld from those patients. But prognostic indices without the probability of error cannot yet be constructed.