Integrated programmable strongly coupled three-ring resonator photonic molecule with ultralow-power piezoelectric control.

Photonic molecules can realize complex optical energy modes that simulate states of matter and have application to quantum, linear, and nonlinear optical systems. To achieve their full potential, it is critical to scale the photonic molecule energy state complexity and provide flexible, controllable, stable, high-resolution energy state engineering with low power tuning mechanisms. In this work, we demonstrate a controllable, silicon nitride integrated photonic molecule, with three high-quality factor ring resonators strongly coupled to each other and individually actuated using ultralow-power thin-film lead zirconate titanate (PZT) tuning. The resulting six tunable supermodes can be fully controlled, including their degeneracy, location, and degree of splitting, and the PZT actuator design yields narrow PM energy state linewidths below 58 MHz without degradation as the resonance shifts, with over an order of magnitude improvement in resonance splitting-to-width ratio of 58, and power consumption of 90 nW per actuator, with a 1-dB photonic molecule loss. The strongly coupled PZT-controlled resonator design provides a high-degree of resolution and controllability in accessing the supermodes. Given the low loss of the silicon nitride platform from the visible to infrared and the three individual bus, six-port design, these results open the door to novel device designs and a wide range of applications including tunable lasers, high-order suppression ultranarrow-linewidth lasers, dispersion engineering, optical parametric oscillators, physics simulations, and atomic and quantum photonics.

Silicon nitride stress-optic microresonator modulator for optical control applications.

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz2/3 and 73.8 dB·Hz2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Processing-Structure-Property Relations for Radiation Tolerance of Relaxor-Ferroelectric Thin Films.

This work investigates the role of microstructure on the radiation tolerance of relaxor-ferroelectric, lead magnesium niobate-lead titanate, thin films for piezoelectric microelectromechanical system (MEMS) applications. Thin films comprised of 0.7Pb[Mg1/3Nb2/3]O3-0.3PbTiO3 were fabricated via chemical solution deposition on platinized silicon wafers. Processing parameters, i.e., pyrolysis and annealing temperatures and durations, were varied to change the microstructure of the films. The functional response of the films was characterized before and after exposure to gamma radiation [up to 10 Mrad(Si)]. Within the total ionization dose studied, all films showed a <5% change in dielectric response and polarization and <15% change in piezoelectric response, after irradiation. While all films showed substantial radiation tolerance, those with large columnar grains showed the highest dielectric and piezoelectric response and, therefore, might offer the best approach for enabling piezoelectric MEMS devices for applications in radiative environments.

Effects of Gamma Irradiation on Functional Response of Relaxor-Ferroelectric Thin Films.

This work investigates the radiation response of relaxor-ferroelectric, lead magnesium niobate-lead titanate (PMN-PT) thin films, as an alternative material for microelectromechanical system (MEMS) devices in harsh environments. PMN-PT (0.7Pb[Mg1/3Nb2/3]O3-0.3PbTiO3) thin films were fabricated via chemical solution deposition onto platinized Si wafers and exposed to gamma radiation doses up to 10 Mrad(Si). The functional response of the thin films was measured before and after irradiation, and the resulting changes were reported. Within the radiation dose range studied, dielectric permittivity, tunability, and saturated polarization showed <5% change, and saturated piezoelectric coefficient <10% change. Additionally, PMN-PT thin films showed equivalent or superior radiation tolerance compared with lead zirconate titanate thin films previously studied. Higher chemical heterogeneity and greater domain wall mobility are expected to contribute to overall greater radiation tolerance in PMN-PT thin films. Nonlinear trends were found in dielectric and piezoelectric response with increasing dose, showing enhanced response at low doses of radiation before degradation at high doses. However, such variations were also within the experimentally observed dispersion of the data. The results are expected to impact systems to be deployed in areas of high radiation exposure, including systems used in aerospace, medical physics, X-ray/high-energy source measurement tools, and continuous monitoring of nuclear power applications.

Rapid Harmonic Analysis of Piezoelectric MEMS Resonators.

This paper reports on a novel simulation method combining the speed of analytical evaluation with the accuracy of finite-element analysis (FEA). This method is known as the rapid analytical-FEA technique (RAFT). The ability of the RAFT to accurately predict frequency response orders of magnitude faster than conventional simulation methods while providing deeper insights into device design not possible with other types of analysis is detailed. Simulation results from the RAFT across wide bandwidths are compared to measured results of resonators fabricated with various materials, frequencies, and topologies with good agreement. These include resonators targeting beam extension, disk flexure, and Lamé beam modes. An example scaling analysis is presented and other applications enabled are discussed as well. The supplemental material includes example code for implementation in ANSYS, although any commonly employed FEA package may be used.

A General Analytical Formulation for the Motional Parameters of Piezoelectric MEMS Resonators.

This paper reports on a general analytical expression for the motional resistance ( ) of an arbitrary mode in a piezoelectric microelectromechanical system resonator with parallel plate electrode geometry. After applying simplifying assumptions and using analytical modes shapes, expressions for the of modes with out-of-plane flexure as the primary displacement are presented. These modes include free-free transverse beam flexure (TBF), unclamped disk flexure resonators (DFRs), and antisymmetric Lamb modes. For verification, is extracted from resonators fabricated in a lead zirconate titanate on silicon process. Predicted of TBF and DFR modes is validated using on-wafer extracted constants, analytical modal properties, and independently measured material properties.

Phenomenological Model for Defect Interactions in Irradiated Functional Materials.

The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception - protonic-defect-conducting oxides find use in solid oxide fuel cells (SOFCs) and oxygen-deficient high-temperature superconductors are poised for power transmission and magnetic imaging applications. Similarly, the advantageous functional responses in ferroelectric materials that make them attractive for use in microelectromechanical systems (MEMS), logic elements, and environmental energy harvesting, are derived from interactions of defects with other defects (such as domain walls) and with the lattice. Chemical doping has traditionally been employed to study the effects of defects in functional materials, but complications arising from compositional heterogeneity often make interpretation of results difficult. Alternatively, irradiation is a versatile means of evaluating defect interactions while avoiding the complexities of doping. Here, a generalized phenomenological model is developed to quantify defect interactions and compare material performance in functional oxides as a function of radiation dose. The model is demonstrated with historical data from literature on ferroelectrics, and expanded to functional materials for SOFCs, mixed ionic-electronic conductors (MIECs), He-ion implantation, and superconductors. Experimental data is used to study microstructural effects on defect interactions in ferroelectrics.

Total Ionizing Dose Effects on Piezoelectric Thin-Film Cantilevers With Oxide Electrodes.

This paper reports on the ionizing radiation effects in lead-zirconate-titanate (PZT) with varied top electrode material and bias condition during radiation. A technique to characterize the piezoelectric performance of films unclamped from the substrate is described, and used to demonstrate the effects of radiation on the material's electromechanical behavior. Both platinum and iridium oxide top electrodes were examined, and iridium oxide appears to significantly mitigate radiation-induced damage that is observed in platinum top electrode samples. This mitigation of radiation damage is attributed to the reduced number of oxygen vacancies within the PZT films when an iridium oxide top electrode is used. Devices with applied bias during radiation were compared with devices under applied bias only. Applied bias appears to slightly enhance the electromechanical response in the negative bias polarity for irradiated platinum electrode samples suggesting that the bias can cause defects to orient and therefore improve electromechanical response. Ultimately, iridium oxide top electrodes appear to mitigate radiation damage.