Ionically Gated Small-Molecule OPV: Interfacial Doping of Charge Collector and Transport Layer.

We demonstrate an improvement in the performance of organic photovoltaic (OPV) systems based on small molecules by ionic gating via controlled reversible n-doping of multi-wall carbon nanotubes (MWCNTs) coated on fullerene electron transport layers (ETLs): C60 and C70. Such electric double-layer charging (EDLC) doping, achieved by ionic liquid (IL) charging, allows tuning of the electronic concentration in MWCNTs and the fullerene planar acceptor layers, increasing it by orders of magnitude. This leads to the decrease of the series and increase of the shunt resistances of OPVs and allows use of thick (up to 200 nm) ETLs, increasing the durability of OPVs. Two stages of OPV enhancement are described upon the increase of gating bias Vg: at small (or even zero) Vg, the extended interface of ILs and porous transparent MWCNTs is charged by gating, and the fullerene charge collector is significantly improved, becoming an ohmic contact. This changes the S-shaped J-V curve via improving the electron collection by an n-doped MWCNT cathode with an ohmic interfacial contact. The J-V curves further improve at higher gating bias Vg due to the increase of the Fermi level and decrease of the MWCNT work function. At the next qualitative stage, the acceptor fullerene layer becomes n-doped by electron injection from MWCNTs while ions of ILs penetrate into the fullerene. At this step, the internal built-in field is created within OPV, which helps in exciton dissociation and charge separation/transport, increasing further the Jsc and the fill factor. The ionic gating concept demonstrated here for most simple classical planar small-molecule OPV cells can be potentially applied to more complex highly efficient hybrid devices, such as perovskite photovoltaic with an ETL or a hole transport layer, providing a new way to tune their properties via controllable and reversible interfacial doping of charge collectors and transport layers.

Slot-Die-Printed Two-Dimensional ZrS3 Charge Transport Layer for Perovskite Light-Emitting Diodes.

Liquid-phase exfoliation of zirconium trisulfide (ZrS3) was used to produce stable and ready-to-use inks for solution-processed semiconductor thin-film deposition. Ribbon-like layered crystals of ZrS3 were produced by the chemical vapor transport method and were then exfoliated in three different solvents: dimethylformamide, ethanol, and isopropyl alcohol. The resulting ZrS3 dispersions were compared for stability and the ability to form continuous films on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr3/2D-ZrS3/LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. The slot-die coating route proved to produce better and more uniform films with respect to spray coating. We found that the 2D ZrS3 electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the other hand, EIL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. Combining physical device simulation and density functional theory calculation, we are able to explain these results in terms of lowering the electron injection barrier at the cathode.