Synergizing a Large Ordinary Nernst Effect and Axis-Dependent Conduction Polarity in Flat Band KMgBi Crystals.

The exploration of quantum materials in which an applied thermo/electrical/magnetic field along one crystallographic direction produces an anisotropic response has led to unique functionalities. Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross-plane dispersion, which, in combination with an isotropic conduction band, enables axis-dependent conduction polarity. Thermopower and Hall measurements indicate dominant p-type conduction along the cross-plane direction, and n-type conduction along the in-plane direction, leading to a significant zero-field transverse thermoelectric response when the heat flux is at an angle to the principal crystallographic directions. Additionally, a large Ordinary Nernst effect (ONE) is observed with an applied field.  It arises from the ambipolar term in the Nernst effect, whereby the Lorentz force on electrons and holes makes them drift in opposite directions so that the resulting Nernst voltage becomes a function of the difference between their partial thermopowers, greatly enhancing the ONE. It is proven that axis-dependent polarity can synergistically enhance the ONE, in addition to leading to a zero-field transverse thermoelectric performance.

Interplay between Magnetism and Topology: Large Topological Hall Effect in an Antiferromagnetic Topological Insulator, EuCuAs.

Magnetic interactions in combination with nontrivial band structures can give rise to several exotic physical properties such as a large anomalous Hall effect, the anomalous Nernst effect, and the topological Hall effect (THE). Antiferromagnetic (AFM) materials exhibit the THE due to the presence of nontrivial spin structures. EuCuAs crystallizes in a hexagonal structure with an AFM ground state (Néel temperature ∼ 16 K). In this work, we observe a large topological Hall resistivity of ∼7.4 µΩ-cm at 13 K which is significantly higher than the giant topological Hall effect of Gd2PdSi3 (∼3 µΩ-cm). Neutron diffraction experiments reveal that the spins form a transverse conical structure during the metamagnetic transition, resulting in the large THE. In addition, by controlling the magnetic ordering structure of EuCuAs with an external magnetic field, several fascinating topological states such as Dirac and Weyl semimetals have been revealed. These results suggest the possibility of spintronic devices based on antiferromagnets with tailored noncoplanar spin configurations.

Bonding and Suppression of a Magnetic Phase Transition in EuMn2P2.

Electrons in solids often adopt complex patterns of chemical bonding driven by the competition between energy gains from covalency and delocalization, and energy costs of double occupation to satisfy Pauli exclusion, with multiple intermediate states in the transition between highly localized, and magnetic, and delocalized, and nonmagnetic limits. Herein, we report a chemical pressure-driven transition from a proper Mn magnetic ordering phase transition to a Mn magnetic phase crossover in EuMn2P2 the limiting end member of the EuMn2X2 (X = Sb, As, P) family of layered materials. This loss of a magnetic ordering occurs despite EuMn2P2 remaining an insulator at all temperatures, and with a phase transition to long-range Eu antiferromagnetic order at TN ≈ 17 K. The absence of a Mn magnetic phase transition contrasts with the formation of long-range Mn order at T ≈ 130 K in isoelectronic EuMn2Sb2 and EuMn2As2. Temperature-dependent specific heat and 31P NMR measurements provide evidence for the development of short-range Mn magnetic correlations from T ≈ 250-100 K, interpreted as a precursor to covalent bond formation. Density functional theory calculations demonstrate an unusual sensitivity of the band structure to the details of the imposed Mn and Eu magnetic order, with an antiferromagnetic Mn arrangement required to recapitulate an insulating state. Our results imply a picture in which long-range Mn magnetic order is suppressed by chemical pressure, but that antiferromagnetic correlations persist, narrowing bands and producing an insulating state.

Ultrahigh transverse thermoelectric power factor in flexible Weyl semimetal WTe2.

Topological semimetals are well known for their interesting physical properties, while their mechanical properties have rarely received attention. With the increasing demand for flexible electronics, we explore the great potential of the van der Waals bonded Weyl semimetal WTe2 for flexible thermoelectric applications. We find that WTe2 single crystals have an ultrahigh Nernst power factor of ~3 Wm-1K-2, which outperforms the conventional Seebeck power factors of the state-of-the-art thermoelectric semiconductors by 2-3 orders of magnitude. A unique band structure that hosts compensated electrons and holes with extremely high mobilities is the primary mechanism for this huge Nernst power factor. Moreover, a large Ettingshausen signal of ~5 × 10-5 KA-1m is observed at 23.1 K and 9 T. In this work, the combination of the exceptional Nernst-Ettingshausen performance and excellent mechanical transformative ability of WTe2 would be instructive for flexible micro-/nano-thermoelectric devices.

Oxygen deficiency in Sr2FeO4-x: electrochemical control and impact on magnetic properties.

The oxygen-deficient system Sr2FeO4-x was explored by heating the stoichiometric Fe4+ oxide Sr2FeO4 in well-defined oxygen partial pressures which were controlled electrochemically by solid-state electrolyte coulometry. Samples with x up to about 0.2 were obtained by this route. X-ray diffraction analysis reveals that the K2NiF4-type crystal structure (space group I4/mmm) of the parent compound is retained. The lattice parameter a slightly decreases while the c-parameter increases with increasing x, which is in contrast to the Ruddlesden-Popper system Sr3Fe2O7-x and suggests removal of oxygen atoms from FeO2 lattice planes. The magnetic properties were studied by magnetization, 57Fe Mössbauer, and powder neutron diffraction experiments. The results suggest that extraction of oxygen atoms from the lattice progressively changes the elliptical spiral spin ordering of the parent compound to an inhomogeneous magnetic state with coexistence of long-range ordered regions adopting a circular spin spiral and smaller magnetic clusters.

Pressure Tuning of Superconductivity of LaPt4Ge12 and PrPt4Ge12 Single Crystals.

We carried out electrical resistivity and X-ray diffraction (XRD) studies on the filled skutterudite superconductors LaPt4Ge12 and PrPt4Ge12 under hydrostatic pressure. The superconducting transition temperature Tc is linearly suppressed upon increasing pressure, though the effect of pressure on Tc is rather weak. From the analysis of the XRD data, we obtain bulk moduli of B=106 GPa and B=83 GPa for LaPt4Ge12 and PrPt4Ge12, respectively. The knowledge of the bulk modulus allows us to compare the dependence of Tc on the unit-cell volume from our pressure study directly with that found in the substitution series La1-xPrxPt4Ge12. We find that application of hydrostatic pressure can be characterized mainly as a volume effect in LaPt4Ge12 and PrPt4Ge12, while substitution of Pr for La in La1-xPrxPt4Ge12 yields features going beyond a simple picture.

Polycation-Polyanion Architecture of the Intermetallic Compound Mg3-xGa1+xIr.

Mg3-xGa1+xIr (x = 0.05) was synthesized by direct reaction of the elements in welded tantalum containers at 1200 °C and subsequent annealing at 500 °C for 30 days. Its crystal structure represents a new prototype and was determined by single-crystal technique as follows: space group P63/mcm, Pearson symbol hP90, Z = 18, a = 14.4970(3) Å, c = 8.8638(3) Å. The composition and atomic arrangement in Mg3GaIr do not follow the 8-N rule due to the lack of valence electrons. Based on chemical bonding analysis in positional space, it was shown that the title compound has a polycationic-polyanionic organization. In comparison with other known intermetallic substances with this kind of bonding pattern, both the polyanion and the polyanion are remarkably complex. Mg3-xGa1+xIr is an example of how the general organization of intermetallic substances (e.g., formation of polyanions and polycations) can be understood by extending the principles of 8-N compounds to electron-deficient materials with multi-atomic bonding.

Giant Topological Hall Effect in the Noncollinear Phase of Two-Dimensional Antiferromagnetic Topological Insulator MnBi4Te7.

Magnetic topological insulators provide an important platform for realizing several exotic quantum phenomena, such as the axion insulating state and the quantum anomalous Hall effect, owing to the interplay between topology and magnetism. MnBi4Te7 is a two-dimensional Z2 antiferromagnetic (AFM) topological insulator with a Néel temperature of ∼13 K. In AFM materials, the topological Hall effect (THE) is observed owing to the existence of nontrivial spin structures. A material with noncollinearity that develops in the AFM phase rather than at the onset of the AFM order is particularly important. In this study, we observed that such an unanticipated THE starts to develop in a MnBi4Te7 single crystal when the magnetic field is rotated away from the easy axis (c-axis) of the system. Furthermore, the THE resistivity reaches a giant value of ∼7 µΩ-cm at 2 K when the angle between the magnetic field and the c-axis is 75°. This value is significantly higher than the values for previously reported systems with noncoplanar structures. The THE can be ascribed to the noncoplanar spin structure resulting from the canted state during the spin-flip transition in the ground AFM state of MnBi4Te7. The large THE at a relatively low applied field makes the MnBi4Te7 system a potential candidate for spintronic applications.

Large Anomalous Hall and Nernst Effects in High Curie-Temperature Iron-Based Heusler Compounds.

The interplay between topology and magnetism has recently sparked the frontier studies of magnetic topological materials that exhibit intriguing anomalous Hall and Nernst effects owning to the large intrinsic Berry curvature (BC). To better understand the anomalous quantum transport properties of these materials and their implications for future applications such as electronic and thermoelectric devices, it is crucial to discover more novel material platforms for performing anomalous transverse transport studies. Here, it is experimentally demonstrated that low-cost Fe-based Heusler compounds exhibit large anomalous Hall and Nernst effects. An anomalous Hall conductivity of 250-750 S cm-1 and Nernst thermopower of above 2 µV K-1 are observed near room temperature. The positive effect of anti-site disorder on the anomalous Hall transport is revealed. Considering the very high Curie temperature (nearly 1000 K), larger Nernst thermopowers at high temperatures are expected owing to the existing magnetic order and the intrinsic BC. This work provides a background for developing low-cost Fe-based Heusler compounds as a new material platform for anomalous transport studies and applications, in particular, near and above room temperature.

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi.

A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes' mobilities are both 5000 cm2V-1s-1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band's sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics.

2D-Berry-Curvature-Driven Large Anomalous Hall Effect in Layered Topological Nodal-Line MnAlGe.

Topological magnets comprising 2D magnetic layers with Curie temperatures (TC ) exceeding room temperature are key for dissipationless quantum transport devices. However, the identification of a material with 2D ferromagnetic planes that exhibits an out-of-plane-magnetization remains a challenge. This study reports a ferromagnetic, topological, nodal-line, and semimetal MnAlGe composed of square-net Mn layers that are separated by nonmagnetic Al-Ge spacers. The 2D ferromagnetic Mn layers exhibit an out-of-plane magnetization below TC  ≈ 503 K. Density functional calculations demonstrate that 2D arrays of Mn atoms control the electrical, magnetic, and therefore topological properties in MnAlGe. The unique 2D distribution of the Berry curvature resembles the 2D Fermi surface of the bands that form the topological nodal line near the Fermi energy. A large anomalous Hall conductivity of ≈700 S cm-1 is obtained at 2 K and related to this nodal-line-induced 2D Berry curvature distribution. The high transition temperature, large anisotropic out-of-plane magnetism, and natural heterostructure-type atomic arrangements consisting of magnetic Mn and nonmagnetic Al/Ge elements render nodal-line MnAlGe one of the few, unique, and layered topological ferromagnets that have ever been observed.

Thermoelectric Properties of Novel Semimetals: A Case Study of YbMnSb2.

The emerging class of topological materials provides a platform to engineer exotic electronic structures for a variety of applications. As complex band structures and Fermi surfaces can directly benefit thermoelectric performance it is important to identify the role of featured topological bands in thermoelectrics particularly when there are coexisting classic regular bands. In this work, the contribution of Dirac bands to thermoelectric performance and their ability to concurrently achieve large thermopower and low resistivity in novel semimetals is investigated. By examining the YbMnSb2 nodal line semimetal as an example, the Dirac bands appear to provide a low resistivity along the direction in which they are highly dispersive. Moreover, because of the regular-band-provided density of states, a large Seebeck coefficient over 160 µV K-1 at 300 K is achieved in both directions, which is very high for a semimetal with high carrier concentration. The combined highly dispersive Dirac and regular bands lead to ten times increase in power factor, reaching a value of 2.1 mW m-1 K-2 at 300 K. The present work highlights the potential of such novel semimetals for unusual electronic transport properties and guides strategies towards high thermoelectric performance.

"Excess" electrons in LuGe.

The monogermanide LuGe is obtained via high-pressure high-temperature synthesis (5-15 GPa, 1023-1423 K). The crystal structure is solved from single-crystal X-ray diffraction data (structure type FeB, space group Pnma, a=7.660(2) Å, b=3.875(1) Å, and c=5.715(2) Å, RF =0.036 for 206 symmetry independent reflections). The analysis of chemical bonding applying quantum-chemical techniques in position space was performed. It revealed-beside the expected 2c-Ge-Ge bonds in the germanium polyanion-rather unexpected four-atomic bonds between lutetium atoms indicating the formation of a polycation by the excess electrons in the system Lu3+ (2b)Ge2- ×1 e- . Despite the reduced VEC of 3.5, lutetium monogermanide is following the extended 8-N rule with the trend to form lutetium-lutetium bonds utilizing the electrons left after satisfying the bonding needs in the anionic Ge-Ge zigzag chain.

A New Highly Anisotropic Rh-Based Heusler Compound for Magnetic Recording.

The development of high-density magnetic recording media is limited by superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat-assisted magnetic recording was developed, rapidly heating the media to the Curie temperature Tc before writing, followed by rapid cooling. Requirements are a suitable Tc , coupled with anisotropic thermal conductivity and hard magnetic properties. Here, Rh2 CoSb is introduced as a new hard magnet with potential for thin-film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJ m-3 is combined with a saturation magnetization of µ0 Ms  = 0.52 T at 2 K (2.2 MJ m-3 and 0.44 T at room temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth-free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 µB on Co, which is hybridized with neighboring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature dependence of the anisotropy that follows from its Tc of 450 K, together with a thermal conductivity of 20 W m-1 K-1 , make Rh2 CoSb a candidate for the development of heat-assisted writing with a recording density in excess of 10 Tb in.-2 .

Crystal structure, chemical bonding, and electrical and thermal transport in Sc5Rh6Sn18.

Single crystals of Sc5Rh6Sn18 were grown from Sn-flux. The crystal structure (SG: I41/acd, a = 13.5529(2) Å, c = 27.0976(7) Å) was studied by high-resolution X-ray diffraction on powder and single crystal material as well as by TEM. All methods confirm it to crystallize with a Sc5Ir6Sn18 (space group I41/acd) type structure. The performed structural studies also suggest the presence of local domains with a broken average translational symmetry. An analysis of the chemical bonding situation reveals highly polar covalent Sc2-Sn1, Sn-Rh and Sc2-Rh bonds, two- and three-centre bonds involving Sn-atoms as well as the ionic nature of Sc1 bonding. The thermopower of Sc5Rh6Sn18 is isotropic, small and negative (i.e. dominance of electron-like charge carriers). Due to structural disorder, the thermal conductivity is lower in comparison with regular metallic systems.

Largely Suppressed Magneto-Thermal Conductivity and Enhanced Magneto-Thermoelectric Properties in PtSn4.

Highly conductive topological semimetals with exotic electronic structures offer fertile ground for the investigation of the electrical and thermal transport behavior of quasiparticles. Here, we find that the layer-structured Dirac semimetal PtSn4 exhibits a largely suppressed thermal conductivity under a magnetic field. At low temperatures, a dramatic decrease in the thermal conductivity of PtSn4 by more than two orders of magnitude is obtained at 9 T. Moreover, PtSn4 shows both strong longitudinal and transverse thermoelectric responses under a magnetic field. Large power factor and Nernst power factor of approximately 80-100 µW·cm-1·K-2 are obtained around 15 K in various magnetic fields. As a result, the thermoelectric figure of merit zT is strongly enhanced by more than 30 times, compared to that without a magnetic field. This work provides a paradigm for the decoupling of the electron and hole transport behavior of highly conductive topological semimetals and is helpful for developing topological semimetals for thermoelectric energy conversion.

Revealing the Intrinsic Electronic Structure of 3D Half-Heusler Thermoelectric Materials by Angle-Resolved Photoemission Spectroscopy.

Accurate determination of the intrinsic electronic structure of thermoelectric materials is a prerequisite for utilizing an electronic band engineering strategy to improve their thermoelectric performance. Herein, with high-resolution angle-resolved photoemission spectroscopy (ARPES), the intrinsic electronic structure of the 3D half-Heusler thermoelectric material ZrNiSn is revealed. An unexpectedly large intrinsic bandgap is directly observed by ARPES and is further confirmed by electrical and optical measurements and first-principles calculations. Moreover, a large anisotropic conduction band with an anisotropic factor of 6 is identified by ARPES and attributed to be one of the most important reasons leading to the high thermoelectric performance of ZrNiSn. These successful findings rely on the grown high-quality single crystals, which have fewer Ni interstitial defects and negligible in-gap states on the electronic structure. This work demonstrates a realistic paradigm to investigate the electronic structure of 3D solid materials by using ARPES and provides new insights into the intrinsic electronic structure of the half-Heusler system benefiting further optimization of thermoelectric performance.

In-Cage Interactions in the Clathrate Superconductor Sr8 Si46.

The clathrate I superconductor Sr8 Si46 is obtained under high-pressure high-temperature conditions, at 5 GPa and temperatures in the range of 1273 to 1373 K. At ambient pressure, the compound decomposes upon heating at T=796(5) K into Si and SrSi2 . The crystal structure of the clathrate is isotypic to that of Na8 Si46 . Chemical bonding analysis reveals conventional covalent bonding within the silicon network as well as additional multi-atomic interactions between Sr and Si within the framework cages. Physical measurements indicate a bulk BCS type II superconducting state below Tc =3.8(3) K.

Crystal structure and superconducting properties of Sc5Ir6Sn18.

Sc5Ir6Sn18 crystallizes with a split variant of the Tb5Rh6Sn18 structure type (space group I41/acd, [Formula: see text] [Formula: see text], [Formula: see text] [Formula: see text]). DFT calculations confirmed the instability of the structural arrangement with the fully occupied and unsplit crystallographic sites. High quality single crystals were grown from a Sn melt. Sc5Ir6Sn18 is a diamagnetic metal showing a superconducting transition at a critical temperature [Formula: see text] K. The relatively low critical magnetic field [Formula: see text] 3.2 T as well as the obtained values of the specific heat ratio [Formula: see text] and energy-gap ratio [Formula: see text] suggest this system to be a weakly coupled BCS-like superconductor.

Extremely high conductivity observed in the triple point topological metal MoP.

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point fermion material. We show that the electrical resistivity is 6 nΩ cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.