Rigorous modelling of light scattering in solar cells based on finite element method and Huygens' expansion.

Finite element method is coupled with Huygens' expansion to determine light intensity distribution of scattered light in solar cells and other optoelectronic devices. The rigorous foundation of the modelling enables calculation of the light intensity distribution at a chosen distance and surface of observation in chosen material in reflection or in transmission for given wavelength of the incident light. The calculation of scattering or anti-reflection properties is not limited to a single textured interface, but can be done above more complex structures with several scattering interfaces or even with particles involved. Both scattering at periodic and at random textures can be efficiently handled with the modelling approach. A procedure for minimisation of the effect of small-area sample, which is considered in the finite element method calculation, is proposed and implemented into the modelling. Angular distribution function, total transmission and total reflection of the scattering interface or structure can be determined using the model. Furthermore, a method for calculation of the haze parameter of reflected or transmitted light is proposed. The modelling approach is applied to periodic and random nano-textured samples for photovoltaic applications, showing good agreement with measured data.

Effect of substrate morphology slope distributions on light scattering, nc-Si:H film growth, and solar cell performance.

Thin-film silicon solar cells are often deposited on textured ZnO substrates. The solar-cell performance is strongly correlated to the substrate morphology, as this morphology determines light scattering, defective-region formation, and crystalline growth of hydrogenated nanocrystalline silicon (nc-Si:H). Our objective is to gain deeper insight in these correlations using the slope distribution, rms roughness (σ(rms)) and correlation length (lc) of textured substrates. A wide range of surface morphologies was obtained by Ar plasma treatment and wet etching of textured and flat-as-deposited ZnO substrates. The σ(rms), lc and slope distribution were deduced from AFM scans. Especially, the slope distribution of substrates was represented in an efficient way that light scattering and film growth direction can be more directly estimated at the same time. We observed that besides a high σ(rms), a high slope angle is beneficial to obtain high haze and scattering of light at larger angles, resulting in higher short-circuit current density of nc-Si:H solar cells. However, a high slope angle can also promote the creation of defective regions in nc-Si:H films grown on the substrate. It is also found that the crystalline fraction of nc-Si:H solar cells has a stronger correlation with the slope distributions than with σ(rms) of substrates. In this study, we successfully correlate all these observations with the solar-cell performance by using the slope distribution of substrates.