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Light-weight, high-strength, aluminum (Al) alloys have widespread industrial applications. However, most commercially available high-strength Al alloys, like AA 7075, are not suitable for additive manufacturing due to their high susceptibility to solidification cracking. In this work, a custom Al alloy Al92Ti2Fe2Co2Ni2 is fabricated by selective laser melting. Heterogeneous nanoscale medium-entropy intermetallic lamella form in the as-printed Al alloy. Macroscale compression tests reveal a combination of high strength, over 700 MPa, and prominent plastic deformability. Micropillar compression tests display significant back stress in all regions, and certain regions have flow stresses exceeding 900 MPa. Post-deformation analyses reveal that, in addition to abundant dislocation activities in Al matrix, complex dislocation structures and stacking faults form in monoclinic Al9Co2 type brittle intermetallics. This study shows that proper introduction of heterogeneous microstructures and nanoscale medium entropy intermetallics offer an alternative solution to the design of ultrastrong, deformable Al alloys via additive manufacturing.
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Fractional quantum Hall (FQH) states are known for their robust topological order and possess properties that are appealing for applications in fault-tolerant quantum computing. An engineered quantum platform would provide opportunities to operate FQH states without an external magnetic field and enhance local and coherent manipulation of these exotic states. We demonstrate a lattice version of photon FQH states using a programmable on-chip platform based on photon blockade and engineering gauge fields on a two-dimensional circuit quantum electrodynamics system. We observe the effective photon Lorentz force and butterfly spectrum in the artificial gauge field, a prerequisite for FQH states. After adiabatic assembly of Laughlin FQH wave function of 1/2 filling factor from localized photons, we observe strong density correlation and chiral topological flow among the FQH photons. We then verify the unique features of FQH states in response to external fields, including the incompressibility of generating quasiparticles and the smoking-gun signature of fractional quantum Hall conductivity. Our work illustrates a route to the creation and manipulation of novel strongly correlated topological quantum matter composed of photons and opens up possibilities for fault-tolerant quantum information devices.
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Ceramic materials with high strength and chemical inertness are widely used as engineering materials. However, the brittle nature limits their applications as fracture occurs before the onset of plastic yielding. There has been limited success despite extensive efforts to enhance the deformability of ceramics. Here we report a method for enhancing the room temperature plastic deformability of ceramics by artificially introducing abundant defects into the materials via preloading at elevated temperatures. After the preloading treatment, single crystal (SC) TiO2 exhibited a substantial increase in deformability, achieving 10% strain at room temperature. SC α-Al2O3 also showed plastic deformability, 6 to 7.5% strain, by using the preloading strategy. These preinjected defects enabled the plastic deformation process of the ceramics at room temperature. These findings suggest a great potential for defect engineering in achieving plasticity in ceramics at room temperature.
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Recent breakthroughs have opened the possibility of intermediate-scale quantum computing with tens to hundreds of qubits, and shown the potential for solving classical challenging problems, such as in chemistry and condensed matter physics. However, the high accuracy needed to surpass classical computers poses a critical demand on the circuit depth, which is severely limited by the non-negligible gate infidelity, currently around 0.1%-1%. The limited circuit depth places restrictions on the performance of variational quantum algorithms (VQA) and prevents VQAs from exploring desired nontrivial quantum states. To resolve this problem, we propose a paradigm of Schrödinger-Heisenberg variational quantum algorithms (SHVQA). Using SHVQA, the expectation values of operators on states that require very deep circuits to prepare can now be efficiently measured by rather shallow circuits. The idea is to incorporate a virtual Heisenberg circuit, which acts effectively on the measurement observables, into a real shallow Schrödinger circuit, which is implemented realistically on the quantum hardware. We choose a Clifford virtual circuit, whose effect on the Hamiltonian can be seen as efficient classical processing. Yet, it greatly enlarges the state's expressivity, realizing much larger unitary t designs. Our method enables accurate quantum simulation and computation that otherwise are only achievable with much deeper circuits or more accurate operations conventionally. This has been verified in our numerical experiments for a better approximation of random states, higher-fidelity solutions to the XXZ model, and the electronic structure Hamiltonians of small molecules. Thus, together with effective quantum error mitigation, our work paves the way for realizing accurate quantum computing algorithms with near-term quantum devices.
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Complex quantum electronic circuits can be used to design noise-protected qubits, but their complexity may exceed the capabilities of classical simulation. In such cases, quantum computers are necessary for efficient simulation. In this work, we demonstrate the use of variational quantum computing on a transmon-based quantum processor to simulate a superconducting quantum electronic circuit and design a new type of qubit called "Plasmonium", which operates in the plasmon-transition regime. The fabricated Plasmonium qubits show a high two-qubit gate fidelity of 99.58(3)%, as well as a smaller physical size and larger anharmonicity compared to transmon qubits. These properties make Plasmonium a promising candidate for scaling up multi-qubit devices. Our results demonstrate the potential of using quantum computers to aid in the design of advanced quantum processors.
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Nanostructured metallic materials with abundant high-angle grain boundaries exhibit high strength and good radiation resistance. While the nanoscale grains induce high strength, they also degrade tensile ductility. We show that a gradient nanostructured ferritic steel exhibits simultaneous improvement in yield strength by 36% and uniform elongation by 50% compared to the homogenously structured counterpart. In situ tension studies coupled with electron backscattered diffraction analyses reveal intricate coordinated deformation mechanisms in the gradient structures. The outermost nanolaminate grains sustain a substantial plastic strain via a profound deformation mechanism involving prominent grain reorientation. This synergistic plastic co-deformation process alters the rupture mode in the post-necking regime, thus delaying the onset of fracture. The present discovery highlights the intrinsic plasticity of nanolaminate grains and their significance in simultaneous improvement of strength and tensile ductility of structural metallic materials.
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Colloidal Ag particles decorated with Fe3O4 islands can be electrochemically or photochemically activated as inverse catalysts for C(sp2)-H heteroarylation. The silver-iron oxide (SIO) particles are reduced into redox-active forms by cathodic charging at mild potentials or by short-term light exposure, and can be reused multiple times by magnetic cycling without further activation. A negative shift in the reduction peak is attributed to an overpotential produced by surface Fe3O4 which separates residual Ag ions or clusters from bulk silver. The catalytic efficiency of SIO is maintained even with acid degradation, which can be countered simply by adding water to the reaction medium.
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High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analogue applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current in planar FET, exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A high transconductance reaches 4 S/mm, recorded among all transistors with a planar structure. Planar FETs working ballistically or quasi-ballistically are exploited as one of the simplest platforms to investigate the intrinsic transport properties. It is found experimentally and theoretically that a high carrier density and high electron velocity both contribute to this high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V, and split C-V measurements at room temperature confirm a high carrier density of up to 6-7 × 1013 /cm2 and a high velocity of about 107 cm/s, well-supported by density functional theory (DFT) calculations. The simultaneous demonstration of such high carrier concentration and average band velocity is enabled by the exploitation of the ultrafast pulse scheme and heat dissipation engineering.
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Despite the essential role of ethylene carbonate (EC) in solid electrolyte interphase (SEI) formation, the high Li+ desolvation barrier and melting point (36 °C) of EC impede lithium-ion battery operation at low temperatures and induce sluggish Li+ reaction kinetics. Here, we demonstrate an EC-free high salt concentration electrolyte (HSCE) composed of lithium bis(fluorosulfonyl)imide salt and tetrahydrofuran solvent with enhanced subzero temperature operation originating from unusually rapid low-temperature Li+ transport. Experimental and theoretical characterizations reveal the dominance of intra-aggregate ion transport in the HSCE that enables efficient low-temperature transport by increasing the exchange rate of solvating counterions relative to that of solvent molecules. This electrolyte also produces a <5 nm thick anion-derived LiF-rich SEI layer with excellent graphite electrode compatibility and electrochemical performance at subzero temperature in half-cells. Full cells based on LiNi0.6Co0.2Mn0.2O2||graphite with tailored HSCE electrolytes outperform state-of-the-art cells comprising conventional EC electrolytes during charge-discharge operation at an extreme temperature of -40 °C. These results demonstrate the opportunities for creating intrinsically robust low-temperature Li+ technology.
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Multiferroic materials are an interesting functional material family combining two ferroic orderings, e.g., ferroelectric and ferromagnetic orderings, or ferroelectric and antiferromagnetic orderings, and find various device applications, such as spintronics, multiferroic tunnel junctions, etc. Coupling multiferroic materials with plasmonic nanostructures offers great potential for optical-based switching in these devices. Here, we report a novel nanocomposite system consisting of layered Bi1.25AlMnO3.25 (BAMO) as a multiferroic matrix and well dispersed plasmonic Au nanoparticles (NPs) and demonstrate that the Au nanoparticle morphology and the nanocomposite properties can be effectively tuned. Specifically, the Au particle size can be tuned from 6.82 nm to 31.59 nm and the 6.82 nm one presents the optimum ferroelectric and ferromagnetic properties and plasmonic properties. Besides the room temperature multiferroic properties, the BAMO-Au nanocomposite system presents other unique functionalities including localized surface plasmon resonance (LSPR), hyperbolicity in the visible region, and magneto-optical coupling, which can all be effectively tailored through morphology tuning. This study demonstrates the feasibility of coupling single phase multiferroic oxides with plasmonic metals for complex nanocomposite designs towards optically switchable spintronics and other memory devices.
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Standard quantum theory was formulated with complex-valued Schrödinger equations, wave functions, operators, and Hilbert spaces. Previous work attempted to simulate quantum systems using only real numbers by exploiting an enlarged Hilbert space. A fundamental question arises: are the complex numbers really necessary in the standard formalism of quantum theory? To answer this question, a quantum game has been developed to distinguish standard quantum theory from its real-number analog, by revealing a contradiction between a high-fidelity multiqubit quantum experiment and players using only real-number quantum theory. Here, using superconducting qubits, we faithfully realize the quantum game based on deterministic entanglement swapping with a state-of-the-art fidelity of 0.952. Our experimental results violate the real-number bound of 7.66 by 43 standard deviations. Our results disprove the real-number formulation and establish the indispensable role of complex numbers in the standard quantum theory.
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The integration of highly luminescent CsPbBr3 quantum dots on nanowire waveguides has enormous potential applications in nanophotonics, optical sensing, and quantum communications. On the other hand, CsPb2 Br5 nanowires have also attracted a lot of attention due to their unique water stability and controversial luminescent property. Here, the growth of CsPbBr3 nanocrystals on CsPb2 Br5 nanowires is reported first by simply immersing CsPbBr3 powder into pure water, CsPbBr3- γ Xγ (X = Cl, I) nanocrystals on CsPb2 Br5 -γ Xγ nanowires are then synthesized for tunable light sources. Systematic structure and morphology studies, including in situ monitoring, reveal that CsPbBr3 powder is first converted to CsPb2 Br5 microplatelets in water, followed by morphological transformation from CsPb2 Br5 microplatelets to nanowires, which is a kinetic dissolution-recrystallization process controlled by electrolytic dissociation and supersaturation of CsPb2 Br5 . CsPbBr3 nanocrystals are spontaneously formed on CsPb2 Br5 nanowires when nanowires are collected from the aqueous solution. Raman spectroscopy, combined photoluminescence, and SEM imaging confirm that the bright emission originates from CsPbBr3 -γ Xγ nanocrystals while CsPb2 Br5 -γ Xγ nanowires are transparent waveguides. The intimate integration of nanoscale light sources with a nanowire waveguide is demonstrated through the observation of the wave guiding of light from nanocrystals and Fabry-Perot interference modes of the nanowire cavity.
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Although intermetallics are attractive for their high strength, many of them are often brittle at room temperature, thereby severely limiting their potential as structural materials. Here, we report on a previously unidentified deformable nanocrystalline CoAl intermetallics with Co-rich thick grain boundaries (GBs). In situ micropillar compression studies show that nanocrystalline CoAl with thick GBs exhibits ultrahigh yield strength, exceeding 4.5 gigapascals. Unexpectedly, nanocrystalline CoAl intermetallics also show prominent work hardening to a flow stress of 5.7 gigapascals up to 20% compressive strain. Transmission electron microscopy studies show that deformation induces abundant dislocations inside CoAl grains with thick GBs, which accommodate plastic deformation. Molecular dynamics simulations reveal that the Co-rich thick GBs play a vital role in promoting nucleation of dislocations at the Co/CoAl interfaces, thereby enhancing the plasticity of the intermetallics. This study provides a perspective to promoting the plasticity of intermetallics via the introduction of thick GBs.
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Artificial neural network (ANN) and its variants are favored algorithm in designing cardiac arrhythmia classifier (CAC) for its high accuracy. However, the implementation of ultralow power ANN-CAC is challenging due to the intensive computations. Moreover, the imbalanced MIT-BIH database limits the ANN-CAC performance. Several novel techniques are proposed to address the challenges in the low power implementation. Firstly, continuous-in-time discrete-in-amplitude (CTDA) signal flow is adopted to reduce the multiplication operations. Secondly, conditional grouping scheme (CGS) in combination with biased training (BT) is proposed to handle the imbalanced training samples for better training convergency and evaluation accuracy. Thirdly, arithmetic unit sharing with customized high-performance multiplier improves the power efficiency. Verified in FPGA and synthesized in 0.18 µm CMOS process, the proposed CTDA ANN-CAC can classify an arrhythmia within 252 µs at 25 MHz clock frequency with average power of 13.34 µW for 75bpm heart rate. Evaluated on MIT-BIH database, it shows over 98% classification accuracy, 97% sensitivity, and 94% positive predictivity.
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Arritmias Cardíacas/diagnóstico , Eletrocardiografia/instrumentação , Redes Neurais de Computação , Processamento de Sinais Assistido por Computador , Dispositivos Eletrônicos Vestíveis , Desenho de Equipamento , HumanosRESUMO
High-density growth nanotwins enable high-strength and good ductility in metallic materials. However, twinning propensity is greatly reduced in metals with high stacking fault energy. Here we adopted a hybrid technique coupled with template-directed heteroepitaxial growth method to fabricate single-crystal-like, nanotwinned (nt) Ni. The nt Ni primarily contains hierarchical twin structures that consist of coherent and incoherent twin boundary segments with few conventional grain boundaries. In situ compression studies show the nt Ni has a high flow strength of â¼2 GPa and good deformability. Moreover, the nt Ni has superb corrosion behavior due to the unique twin structure in comparison to coarse grained and nanocrystalline counterparts. The hybrid technique opens the door for the fabrication of a wide variety of single-crystal-like nt metals with unique mechanical and chemical properties.
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Nanocrystalline metals have shown enhanced radiation tolerance as grain boundaries serve as effective defect sinks for removing radiation-induced defects. However, the thermal and radiation stability of nanograins are of concerns since radiation may induce grain boundary migration and grain coarsening in nanocrystalline metals when the grain size falls in the range of several to tens of nanometers. In addition, prior in situ radiation studies on nanocrystalline metals have focused primarily on single heavy ion beam radiations, with little consideration of the helium effect on damage evolution. In this work, we utilized in situ single-beam (1 MeV Kr++) and dual-beam (1 MeV Kr++ and 12 keV He+) irradiations to investigate the influence of helium on the radiation response and grain coarsening in nanocrystalline Cu at 300 °C. The grain size, orientation, and individual grain boundary character were quantitatively examined before and after irradiations. Statistic results suggest that helium bubbles at grain boundaries and grain interiors may retard the grain coarsening. These findings provide new perspective on the radiation response of nanocrystalline metals.
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High input impedance, low noise, high common mode rejection ratio (CMRR), and ultralow power are the most important performance indicators in the design of analog front end (AFE) for wearable biomedical sensors. This paper presents a fully differential difference amplifier based AFE that employs dc-coupled input stage to increase the input impedance and improve CMRR. A parasitic capacitor reuse technique is proposed to improve the noise/area efficiency and CMRR. An on-body dc bias scheme is introduced to deal with the input dc offset. Implemented in 0.35 µm CMOS process with an area of 0.405 mm2, the proposed AFE consumes 0.9 µW at 1.8 V and shows excellent noise effective factor of 2.55, and CMRR of 76 dB. Experiment shows the proposed AFE not only picks up clean ECG signal with electrodes placed as close as 2 cm under both resting and walking conditions, but also obtain the distinct α-wave after eye blink from EEG recording.
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Amplificadores Eletrônicos , Eletrocardiografia , Processamento de Sinais Assistido por Computador , Dispositivos Eletrônicos Vestíveis , Impedância Elétrica , HumanosRESUMO
Nanocrystalline (NC) metals are stronger and more radiation-tolerant than their coarse-grained (CG) counterparts, but they often suffer from poor thermal stability as nanograins coarsen significantly when heated to 0.3 to 0.5 of their melting temperature (Tm). Here, we report an NC austenitic stainless steel (NC-SS) containing 1 at% lanthanum with an average grain size of 45 nm and an ultrahigh yield strength of ~2.5 GPa that exhibits exceptional thermal stability up to 1000 °C (0.75 Tm). In-situ irradiation to 40 dpa at 450 °C and ex-situ irradiation to 108 dpa at 600 °C produce neither significant grain growth nor void swelling, in contrast to significant void swelling of CG-SS at similar doses. This thermal stability is due to segregation of elemental lanthanum and (La, O, Si)-rich nanoprecipitates at grain boundaries. Microstructure dependent cluster dynamics show grain boundary sinks effectively reduce steady-state vacancy concentrations to suppress void swelling upon irradiation.
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FIR filter is one of the best choices for ECG signal processing because of its linear phase property. With frequency response masking (FRM) technique, the multipliers needed to implement FIR filter can be reduced dramatically. This paper proposes an architecture for asymmetrical bandpass FIR filter based on the FRM technique. The optimum interpolation factor for the filter is derived and the design procedure for all the sub-filters is given. A design example is included to illustrate the effectiveness of the proposed filter for ECG signal processing. It shows that the filter can fulfill the design objectives with 70.3% less multipliers comparing to the conventional FIR synthesizing technique.