Glass-patternable notch-shaped microwave architecture for on-chip spin detection in biological samples.

We report a notch-shaped coplanar microwave waveguide antenna on a glass plate designed for on-chip detection of optically detected magnetic resonance (ODMR) of fluorescent nanodiamonds (NDs). A lithographically patterned thin wire at the center of the notch area in the coplanar waveguide realizes a millimeter-scale ODMR detection area (1.5 × 2.0 mm2) and gigahertz-broadband characteristics with low reflection (∼8%). The ODMR signal intensity in the detection area is quantitatively predictable by numerical simulation. Using this chip device, we demonstrate a uniform ODMR signal intensity over the detection area for cells, tissue, and worms. The present demonstration of a chip-based microwave architecture will enable scalable chip integration of ODMR-based quantum sensing technology into various bioassay platforms.

Low-magnetic field effect and electrically detected magnetic resonance measurements of photocurrent in vacuum vapor deposition films of weak charge-transfer pyrene/dimethylpyromellitdiimide (Py/DMPI) complex.

Magnetic field effect (MFE) and electrically detected magnetic resonance (EDMR) measurements of photocurrent have been conducted to clarify the excited-state dynamics in films of an organic weak charge-transfer (CT) complex, Pyrene/Dimethylpyromellitdiimide (Py/DMPI), fabricated by vacuum vapor deposition. Low-field MFE measurements of the photocurrent were carried out using an interdigitated platinum electrode made on a quartz substrate as well as the re-examination of the photocurrent and MFE in the range of 3-200 mT. The spin-dependent carrier dynamics leading to the low-field MFE are reasonably simulated as the low-field effect due to the hyperfine mechanism in the radical-pair intersystem crossing, which was solved through the Liouville equations of the density matrix for the stepwise hopping model in the doublet electron-hole pair (DD pair mechanism). Single-crystal time-resolved electron spin resonance measurement was also carried out to justify the MFE mechanism. The averaged trap depth (Etrap) of the triplet exciton was estimated to be +640 ± 89 cm-1 (Etrap/kB = +921 ± 128 K) by the temperature dependence of the signal intensity. This finding gave confidential experimental evidence for the majority of the trapped triplet exciton (3ext). The EDMR experiment directly revealed the evidence of the weakly coupled electron-hole pairs. The effective activation energies (ΔE) for the separation from the photoinduced CT state to the mobile carries are 1200-1900 cm-1 (ΔE/kB = 1700-2700 K). A systematic protocol to clarify the photo-generated carrier dynamics in weak CT complexes is demonstrated, and our findings from this method give not only further support for the two types of collision mechanisms assumed in our previous work but also the detailed information of the carrier dynamics of the weak CT complex, including the activation energy and trapping/detrapping process, which have significant influence on the performance of the organic devices.

Photoconductivity and magnetoconductance effects on vacuum vapor deposition films of weak charge-transfer complexes.

Thin films of weak charge-transfer (CT) complexes (pyrene/dimethylpyromellitdiimide or pyrene/pyromellitic dianhydride) were prepared on an interdigitated platinum electrode by vacuum vapor deposition. Their photoconductivity and magnetoconductance (MC) effects were investigated, and mobile triplet excitons (probably CT excitons) were detected by time-resolved ESR (TRESR) at room temperature. The MC effect on the photocurrent was observed and analyzed by quantum-mechanical simulation assuming two types of collision mechanisms between the electron and hole carriers and between the trapped triplet excitons and mobile carriers. A successful simulation was achieved when the parameters (g, D, E, and polarization) determined by TRESR and the effective hyperfine splitting estimated from an ab initio molecular-orbital calculation were used.

Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface.

A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a two-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG system, demonstrating the ability of d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in a d-electron-based 2DEG at a LaAlO3/SrTiO3 interface, where the spin relaxation length is about 300 nm. Our finding, which counters the conventional understandings of d-electron 2DEGs, highlights the spin-functionality of conductive oxide systems and opens the field of d-electron spintronics.

Spin-pump-induced spin transport in p-type Si at room temperature.

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes.

We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs) on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR) at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.