High-Resolution Electrochemical Transistors Defined by Mold-Guided Drying of PEDOT:PSS Liquid Suspension.

Ion-sensitive transistors with nanoscale or microscale dimensions are promising for high-resolution electrophysiological recording and sensing. Technology that can pattern polymer functional materials directly from a solution can effectively avoid any chemical damage induced by conventional lithography techniques. The application of a mold-guided drying technique to pattern PEDOT:PSS-based transistors with high resolution directly from the water-based suspension is presented in this paper. Gold electrodes with short channels were first defined by creating high-resolution polymer lines with mold-guided drying followed by pattern transfer through a lift-off process. Then, PEDOT:PSS lines were subsequently created through an identical mold-guided drying process on the predefined electrodes. Small-scale transistor devices with both shortened channel length and width exhibited a good high-frequency response because of the weak capacitive effect. This is particularly advantageous for electrochemical transistors since the use of conventional fabrication techniques is extremely challenging in this case. In addition, modified polymer chain alignment of the assembled PEDOT:PSS lines during the drying process was observed by optical and electrical measurement. The mold-guided drying technique has been proven to be a promising method to fabricate small-scale devices, especially for biological applications.

Broadband MoS2 Field-Effect Phototransistors: Ultrasensitive Visible-Light Photoresponse and Negative Infrared Photoresponse.

Inverse photoresponse is discovered from phototransistors based on molybdenum disulfide (MoS2 ). The devices are capable of detecting photons with energy below the bandgap of MoS2 . Under the illumination of near-infrared (NIR) light at 980 and 1550 nm, negative photoresponses with short response time (50 ms) are observed for the first time. Upon visible-light illumination, the phototransistors exhibit positive photoresponse with ultrahigh responsivity on the order of 104 -105 A W-1 owing to the photogating effect and charge trapping mechanism. Besides, the phototransistors can detect a weak visible-light signal with effective optical power as low as 17 picowatts (pW). A thermally induced photoresponse mechanism, the bolometric effect, is proposed as the cause of the negative photocurrent in the NIR regime. The thermal energy of the NIR radiation is transferred to the MoS2 crystal lattice, inducing lattice heating and resistance increase. This model is experimentally confirmed by low-temperature electrical measurements. The bolometric coefficient calculated from the measured transport current change with temperature is -33 nA K-1 . These findings offer a new approach to develop sub-bandgap photodetectors and other novel optoelectronic devices based on 2D layered materials.