Widely tunable multimode-interference based coupled cavity laser with integrated interferometer.

We present a simple to process tunable laser, fabricated in a low-cost generic fabrication process and based on two coupled Fabry-Perot cavities. The complex coupling coefficients of the coupling element are analytically derived from a 3×3 MMI using coupled mode theory and chosen to maximize the SMSR during lasing operation. Additionally, one of the cavities contains a reflective interferometer, which acts as coarse wavelength selector. This interferometer is derived from a Michelson Interferometer, by replacing the two independent mirrors with our optimized coupling element, leading to a doubled Free Spectral Range. As a result, we obtained a tuning range of 26 nm with potential for beyond 40 nm, a SMSR larger than 40 dB and fiber coupled power up to 9 dBm.

Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc.

Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.

Realization of efficient metal grating couplers for membrane-based integrated photonics.

Grating couplers are widely used to couple light between photonic integrated circuits and optical fibers. Here, we fabricate and characterize a device based on a buried metal grating. In contrast to dielectric gratings, simulations predict strongly reduced parasitic leakage of light to the substrate and are performance independent of the optical buffer thickness, while using standard fabrication processes with high yield. The gratings show a 3 dB bandwidth of 61 nm and chip-to-fiber coupling efficiency of 54%, which makes them attractive building blocks for on-wafer testing and dense optical interconnects.

Monolithically integrated 2.5 GHz extended cavity mode-locked ring laser with intracavity phase modulators.

A mode-locked extended cavity quantum well ring laser at 1.58 µm with a repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP-based active-passive integration technology. The 33 mm long cavity contains gain, saturable absorption, and passive waveguide sections as well as phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive and hybrid mode-locked operation, along with the wavelength tuning of the laser modes, are experimentally demonstrated. In the passive mode-locking regime, a beat signal at the fundamental round trip frequency with a 3 dB bandwidth of 6.1 kHz is produced on a fast photo diode.

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser.

In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3 dB/cm has been demonstrated.

Tolerant polarization converter for InGaAsP-InP photonic integrated circuits.

We report the fabrication and characterization of a new polarization converter for InGaAsP-InP photonic integrated circuits. The converter consists of two right trapezoidal sections with the angled sidewalls etched wetly. The converters show a greatly improved tolerance to variations of the fabrication, an averaged efficiency of polarization conversion of 99.8% and a loss of about 0.7 dB at a wavelength of 1.535 µm.

Improved fabrication process of low-loss and efficient polarization converters in InP-based photonic integrated circuits.

We show an improved fabrication process of trapezoidal polarization converters for InP-based photonic integrated circuits. The new process has reduced complexity, and the fabricated converters have loss two times lower than reported previously. The measurements of the converters show an efficiency of polarization conversion of 97.9% at a wavelength of 1.535 µm and loss below 0.5 dB.

Stability of a monolithic integrated filtered-feedback laser.

We experimentally and theoretically investigate the stability of a single-mode integrated filtered-feedback laser as a function of the electrically controlled feedback phase. We interpret the measurements in terms of feedback-induced dynamics, compare them with the results from a stability analysis model for conventional feedback, and find good qualitative agreement.

Sidelobes in the response of arrayed waveguide gratings caused by polarization rotation.

Earlier it was observed that polarization rotation in an AWG built from birefringent waveguides can result in sidelobes in its response. This effect was measured in a polarization sensitive AWG with an orthogonal layout. Now we investigate through detailed simulation whether this effect also exists in polarization desensitised AWGs. It is shown that a dispersion compensated AWG does not suffer from a polarization sidelobe. Alternatively, the AWG can be designed to minimize polarization rotation to suppress the sidelobe.

High-efficiency ultrasmall polarization converter in InP membrane.

An ultrasmall (<10 µm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2 dB at a wavelength of 1.53 µm. Furthermore, our design is found to be broadband and tolerant to dimension variations.

InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 µm.

In this paper a study of waveguide photodetectors based on InAs/InP(100) quantum dot (QD) active material are presented for the first time. These detectors are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. We investigated dark current, responsivity as well as spectral response and bandwidth of the detectors. It is demonstrated that the devices meet the requirements for swept-source optical coherent tomography (SS-OCT) around 1.7 µm. A rate equation model for QD-SOAs was modified and applied to the results to understand the dynamics of the devices. The model showed a good match to the measurements in the 1.6 to 1.8 µm wavelength range by fitting only one of the carrier escape rates. An equivalent circuit model was used to determine the capacitances which dominated the electrical bandwidth.

Plasmonic distributed feedback lasers at telecommunications wavelengths.

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm.

For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides.

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm. We also give results showing room temperature lasing in MIM waveguides, with approximately 310 nm wide semiconductor cores which propagate a transverse electric mode.

Optical injection in semiconductor ring lasers: backfire dynamics.

We report on directional mode switching in semiconductor ring lasers through optical injection co-propagating with the lasing mode. The understanding of this novel feature in ring lasers is based on the particular structure of a two-dimensional asymptotic phase space. Our theoretical results are verified numerically and experimentally.

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum.

First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm.

We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz - 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications.

Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits.

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.

A fast low-power optical memory based on coupled micro-ring lasers.

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 x 40 microm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.