Heterogeneous stacking of nanodot monolayers by dry pick-and-place transfer and its applications in quantum dot light-emitting diodes.

Layered assembly structures composed of nanomaterials, such as nanocrystals, have attracted considerable attention as promising candidates for new functional devices whose optical, electromagnetic and electronic behaviours are determined by the spatial arrangement of component elements. However, difficulties in handling each constituent layer in a material-specific manner limit the 3D integration of disparate nanomaterials into the appropriate heterogeneous electronics. Here we report a pick-and-place transfer method that enables the transfer of large-area nanodot assemblies. This solvent-free transfer utilizes a lifting layer and allows for the reliable transfer of a quantum dot (QD) monolayer, enabling layer-by-layer design. With the controlled multistacking of different bandgap QD layers, we are able to probe the interlayer energy transfer among different QD monolayers. By controlling the emission spectrum through such designed monolayer stacking, we have achieved white emission with stable optoelectronic properties, the closest to pure white among the QD light-emitting diodes reported so far.

Synthesis of multilayer graphene balls by carbon segregation from nickel nanoparticles.

Three-dimensional (3D) structured graphene is a material of great interest due to its diverse applications in electronics, catalytic electrodes, and sensors. However, the preparation of 3D structured graphene is still challenging. Here, we report the fabrication of multilayer graphene balls (GBs) by template-directed carbon segregation using nickel nanoparticles (Ni-NPs) as template materials. To maintain the ball shape of the template Ni-NPs, we used a carburization process using polyol solution as the carbon source and a thermal annealing process to synthesize graphene layers via carbon segregation on the outer surface of the Ni-NPs. The resulting GBs were hollow structures composed of multilayer graphene after the removal of core Ni-NPs, and the thickness of the graphene layers and the size of GBs were tunable by controlling the graphene synthesis conditions. X-ray diffraction analysis and in situ transmission electron microscope characterization revealed that carbon atoms diffused effectively into the Ni-NPs during the carburization step, and that the diffused carbon atoms in Ni-NPs segregated and successfully formed a graphene layer on the surface of the Ni-NPs during thermal annealing. We also performed further heat treatment at high temperature to improve the quality of the graphene layer, resulting in highly crystalline GBs. The unique hollow GBs synthesized here will be useful as excellent high-rate electrode materials for electrochemical lithium storage devices.

Spatial control of quantum sized nanocrystal arrays onto silicon wafers.

Monolayer arrays of monodispersed nanocrystals (<10 nm) onto three dimensional (3D) substrates have considerable potential for various engineering applications such as highly integrated memory devices, solar cells, biosensors and photo and electro luminescent displays because of their highly integrated features with nanocrystal homogeneity. However, most reports on nanocrystal arrays have focused on two dimensional (2D) flat substrates, and the production of wafer-scale monolayer arrays is still challenging. Here we address the feasibility of arraying nanocrystal monolayers in wafer-scale onto 3D substrates. We present both metal (Pd) and semiconductor (CdSe) nanocrystals arrayed in monolayer onto trenched silicon wafers (4 inch diameter) using a facile electrostatic adsorption scheme. In particular, CdSe nanocrystal arrays in the trench well showed superior luminescent efficiency compared to those onto the protruded trench flat, due to the densely arrayed CdSe nanocrystals in the vertical direction. Furthermore, the surface coverage controllability was investigated using a 2D silicon substrate. Our approach can be applied to generate highly efficient displays, memory chips and integrated sensing devices.